Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
Unit : mm
1.5±0.1
4.5±0.1
1.6±0.2
For switching
■ Features
45˚
• Low ON-resistance RDS(ON)
• High-speed switching
• Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
0.4±0.08
0.5±0.08
1.5±0.1
0.4±0.04
3.0±0.15
2
3
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Symbol
VDS
VGSO
ID
Ratings
Unit
V
marking
30
1: Gate
2: Drain
3: Source
±20
V
±1
A
Mini-Power Type Package (3-pin)
Max drain current
IPD
±2
A
Allowable power dissipation *
Channel temperature
Storage temperature
PD
1
W
°C
°C
Marking Symbol: 2M
Internal Connection
Pch
150
Tstg
−55 to +150
D
Note) * PC board: Copper foil of the drain portion should have a area of
1 cm2 or more and the board thickness should be 1.7 mm.
G
S
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
IDSS
Conditions
VDS = 25 V, VGS = 0
Min
Typ
Max
10
Unit
µA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate to Source voltage
IGSS
VGS = ±15 V, VDS = 0
ID = 0.1 mA, VGS = 0
±10
VDSS
VGSS
Vth
30
±20
0.8
IGS = 0.1 mA, VDS = 0
VDS = 5 V, ID = 1 mA
VGS = 4 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0, f = 1 MHz
V
Gate threshold voltage
2
V
Drain to Source ON-resistance *
RDS(ON)1
RDS(ON)2
Yfs
0.48
0.35
0.75
0.6
Ω
Ω
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
0.5
S
Ciss
87
69
pF
pF
pF
ns
ns
ns
Coss
Crss
23
tON
VGS = 10 V, ID = 0.5 A, VDD = 10 V
RL = 10 Ω
12
Fall time
tf
160
60
Turn-off time (delay time)
tOFF
Note) *: Pulse measurement
1
