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2SK360IGETR-E

型号:

2SK360IGETR-E

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

6 页

PDF大小:

68 K

2SK360  
Silicon N-Channel MOS FET  
REJ03G0811-0200  
(Previous ADE-208-1170)  
Rev.2.00  
Aug.10.2005  
Application  
VHF amplifier  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
1. Gate  
2. Drain  
3. Source  
3
1
2
Rev.2.00, Aug 10.2005, page 1 of 5  
2SK360  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
Ratings  
Unit  
1
VDSX  
VGSS  
ID  
*
20  
V
V
±5  
30  
mA  
mA  
mW  
°C  
Gate current  
IG  
±1  
Channel power dissipation  
Channel temperature  
Storage temperature  
Note: 1. VGS = –4 V  
Pch  
Tch  
Tstg  
150  
150  
–55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
V
Test conditions  
ID = 100 µ A, VGS = –4 V  
VGS = ±5 V, VDS = 0  
Drain to source breakdown voltage  
Gate cutoff current  
V(BR)DSX  
20  
6
±20  
12  
IGSS  
nA  
mA  
V
1
Drain current  
IDSS  
*
VDS = 10 V, VGS = 0  
Gate to source cutoff voltage  
Forward transfer admittance  
VGS(off)  
|yfs|  
0
–2.0  
VDS = 10 V, ID = 10 µA  
8
14  
mS  
VDS = 10 V, VGS = 0,  
f = 1 kHz  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Power gain  
Ciss  
Coss  
Crss  
PG  
2.5  
1.6  
0.03  
30  
pF  
pF  
pF  
dB  
dB  
VDS = 10 V, VGS = 0,  
f = 1 MHz  
VDS = 10 V, VGS = 0,  
f = 100 MHz  
Noise figure  
NF  
2.0  
Note: 1. The 2SK360 is grouped by IDSS as follows.  
Grade  
E
F
Mark  
IDSS  
IGE  
IGF  
6 to 10  
8 to 12  
Rev.2.00, Aug 10.2005, page 2 of 5  
2SK360  
Typical Output Characteristics  
Maximum Channel Dissipation Curve  
10  
8
150  
100  
50  
6
4
2
0
50  
100  
150  
2
4
6
8
10  
10  
20  
0
Ambient Temperature Ta (°C)  
Drain to Source Voltage VDS (V)  
Forward Transfer Admittance vs.  
Drain to Source Voltage  
Typical Transfer Characteristics  
10.0  
8.0  
6.0  
4.0  
2.0  
20  
16  
12  
8
VDS = 10 V  
F
E
VGS = 0  
f = 1 kHz  
4
0
–2.0  
–1.6  
–1.2  
–0.8  
–0.4  
0
2
4
6
8
0
Gate to Source Voltage VGS (V)  
Drain to Source Voltage VDS (V)  
Forward Transfer Admittance vs.  
Drain Current  
Input Capacitance vs.  
Drain to Source Voltage  
100  
50  
20  
VDS = 10 V  
f = 1 kHz  
VGS = 0  
f = 1 MHz  
10  
5
20  
10  
5
2
1.0  
0.5  
2
1
0.2  
0.5 1.0  
2
5
10  
20  
0.5  
1.0  
2
5
10  
Drain Current ID (mA)  
Drain to Source Voltage VDS (V)  
Rev.2.00, Aug 10.2005, page 3 of 5  
2SK360  
Reverse Transfer Capacitance vs.  
Drain to Source Voltage  
Output Capacitance vs.  
Drain to Source Voltage  
0.5  
20  
10  
5
VGS = 0  
f = 1 MHz  
VGS = 0  
f = 1 MHz  
0.2  
0.1  
0.05  
2
1.0  
0.5  
0.02  
0.01  
0.5  
1.0  
2
5
10  
20  
0.5  
1.0  
2
5
10  
20  
Drain to Source Voltage VDS (V)  
Drain to Source Voltage VDS (V)  
Power Gain, Noise Figure vs.  
Drain to Source Voltage  
35  
PG  
30  
25  
20  
15  
10  
5
f = 100 MHz  
6
4
2
0
NF  
6
0
2
4
8
10  
12  
Drain to Source Voltage VDS (V)  
Rev.2.00, Aug 10.2005, page 4 of 5  
2SK360  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Package Name  
MASS[Typ.]  
0.011g  
MPAK(T) / MPAK(T)V,  
MPAK / MPAKV  
SC-59A  
PLSP0003ZB-A  
D
A
Q
c
e
E
HE  
L
L
P
L
1
Dimension in Millimeters  
Reference  
Symbol  
A
A
A3  
Min  
1.0  
0
Nom  
Max  
1.3  
0.1  
1.2  
b
A
x
S
A
M
e
A1  
A2  
A3  
1.0  
1.1  
0.25  
0.42  
0.4  
b
0.35  
0.1  
0.5  
A
2
1
A
b
1
c
0.13  
0.11  
0.15  
c1  
D
E
e
2.7  
3.1  
e1  
1.35  
1.5  
0.95  
2.8  
1.65  
A
S
H
E
2.2  
3.0  
b
L
0.35  
0.15  
0.25  
0.75  
0.55  
0.65  
0.05  
0.55  
L
1
b
1
c1  
I1  
L
P
x
c
b
e
2
1
1.95  
0.3  
b
2
I1  
1.05  
A-A Section  
Pattern of terminal position areas  
Q
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK360IGETL  
2SK360IGFTL  
3000  
3000  
φ178mm Reel , 8mm Emboss Taping  
φ178mm Reel , 8mm Emboss Taping  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00, Aug 10.2005, page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  
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