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2SK3740-ZK-AZ

型号：

2SK3740-ZK-AZ

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

169 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3740  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3740 is N-channel MOS FET device that  
features a low on-state resistance and excellent  
switching characteristics, designed for high voltage  
applications such as lamp drive, DC/DC converter, and  
actuator driver.  
PART NUMBER  
PACKAGE  
2SK3740-ZK  
TO-263 (MP-25ZK)  
(TO-263)  
FEATURES  
• Gate voltage rating: ±30 V  
• Low on-state resistance  
RDS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A)  
• Low gate charge  
QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A)  
• Surface mount package available  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
250  
±30  
±20  
±60  
1.5  
V
V
A
A
W
W
°C  
PT2  
Tch  
100  
150  
Storage Temperature  
Tstg  
IAS  
EAS  
–55 to +150  
°C  
A
mJ  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
20  
40  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.25  
83.3  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16913EJ1V0DS00 (1st edition)  
Date Published November 2003 NS CP(K)  
Printed in Japan  
2003  
2SK3740  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
µA  
µA  
V
IDSS  
VDS = 250 V, VGS = 0 V  
10  
10  
VGS = 30 V, VDS = 0 V  
VDS = 10 V, ID = 1.0 mA  
VDS = 10 V, ID = 10 A  
VGS = 10 V, ID = 10 A  
VDS = 10 V  
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
Gate Cut-off Voltage  
2.5  
7.0  
3.5  
15  
4.5  
Note  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
Input Capacitance  
S
Note  
Ω
0.12  
1720  
330  
170  
17  
0.16  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V  
f = 1.0 MHz  
td(on)  
tr  
VDD = 125 V, ID = 10 A  
VGS = 10 V  
17  
RG = 0 Ω  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
49  
9
Total Gate Charge  
QG  
VDD = 200 V  
47  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
7
ID = 20 A  
25  
Note  
Body Diode Forward Voltage  
IF = 20 A, VGS = 0 V  
IF = 20 A, VGS = 0 V  
di/dt = 100 A/µs  
0.91  
210  
1.4  
Reverse Recovery Time  
Reverse Recovery Charge  
Note Pulsed  
ns  
µC  
Qrr  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG  
= 25 Ω  
V
GS  
R
L
90%  
PG.  
GS = 20 → 0 V  
V
GS  
VGS  
10%  
VDD  
50 Ω  
Wave Form  
0
RG  
V
PG.  
VDD  
90%  
ID  
90%  
10%  
BVDSS  
I
D
IAS  
V
0
GS  
10%  
I
D
0
VDS  
Wave Form  
ID  
t
r
t
d(on)  
t
d(off)  
t
f
VDD  
τ
ton  
toff  
τ = 1µs  
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
IG  
= 2 mA  
RL  
PG.  
VDD  
50 Ω  
2
Data Sheet D16913EJ1V0DS  
2SK3740  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
0
25  
50  
75 100 125 150 175  
0
25  
50  
75 100 125 150 175  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
PW = 100  
ｓ
µ
I
D(DC)  
I
D(pulse)  
R
DS(on) Limited  
1
(at VGS = 10 V)  
1 ms  
Power Dissipation Limited  
10 ms  
0.1  
0.01  
0.1  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
Rth(ch-A) = 83.3°C/W  
1
Rth(ch-C) = 1.25°C/W  
0.1  
0.01  
0.001  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
3
Data Sheet D16913EJ1V0DS  
2SK3740  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
70  
60  
50  
40  
30  
20  
10  
0
100  
10  
V
GS = 10 V  
V
DS = 10 V  
Pulsed  
Pulsed  
1
T
A
= 150°C  
0.1  
125°C  
75°C  
25°C  
0.01  
0.001  
0.0001  
40°C  
−
0
5
10 15 20 25 30 35 40  
0
1
2
3
4
5
6
7
8
9 10 11 12  
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
4.5  
4
100  
10  
V
DS = 10 V  
= 1.0 mA  
VDS = 10 V  
Puls ed  
I
D
3.5  
3
1
TA = 40°C  
−
25°C  
75°C  
125°C  
150°C  
0.1  
2.5  
2
0.01  
0.01  
0.1  
1
10  
100  
-50 -25  
0
25 50 75 100 125 150 175  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
400  
V
GS = 10 V  
Pulsed  
350  
300  
250  
200  
150  
100  
50  
Pulsed  
I
D
= 20 A  
10 A  
4 A  
0
0
1
10  
100  
3
4
5
6
7
8
9
10 11 12  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
4
Data Sheet D16913EJ1V0DS  
2SK3740  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
350  
300  
250  
200  
150  
100  
50  
10000  
VGS = 0 V  
V
GS = 10 V  
f = 1.0 MHz  
Pulsed  
C
iss  
1000  
100  
10  
I
D
= 20 A  
10 A  
Coss  
C
rss  
0
0.1  
1
10  
100  
1000  
-50 -25  
0
25 50 75 100 125 150 175  
Tch - Channel Temperature - °C  
VDS - Drain to Source Voltage - V  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
10  
350  
300  
250  
200  
150  
100  
50  
14  
12  
10  
8
I = 20 A  
D
V
V
DD = 125 V  
GS = 10 V  
= 0  
V
DD = 200 V  
R
G
Ω
125 V  
t
d(off)  
50 V  
t
d(on)  
6
V
GS  
t
r
4
t
f
V
DS  
2
1
0
0
0.1  
1
10  
100  
0
10  
20  
30  
40  
50  
ID - Drain Current - A  
QG - Gate Charge - nC  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
100  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
1000  
100  
10  
VGS = 0 V  
di/dt = 100 A/ s  
Pulsed  
µ
10  
1
V
GS = 10 V  
0 V  
0.1  
0.01  
0
0.5  
1
1.5  
0.1  
1
10  
100  
VF(S-D) - Source to Drain Voltage - V  
IF - Diode Forward Current - A  
5
Data Sheet D16913EJ1V0DS  
2SK3740  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
80  
60  
40  
20  
0
100  
10  
1
V
DD = 125 V  
= 25  
R
G
Ω
V
GS = 20  
0 V  
→
IAS = 20 A  
I
AS 20 A  
≤
EAS = 40 mJ  
VDD = 125 V  
RG = 25  
Ω
VGS = 20 0 V  
→
Starting Tch = 25°C  
0.01  
0.1  
1
10  
25  
50  
75  
100  
125  
150  
Starting Tch - Starting Channel Temperature - °C  
L - Inductive Load - mH  
6
Data Sheet D16913EJ1V0DS  
2SK3740  
PACKAGE DRAWING (Unit: mm)  
TO-263 (MP-25ZK)  
10.0 0.ꢀ  
4.45 0.2  
1.ꢀ 0.2  
No plating  
7.88 MIN.  
4
0.025 to  
0.25  
0.75 0.2  
2.54  
0.25  
1
2
ꢀ
1.Gate  
2.Drain  
ꢀ.Source  
4.Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
7
Data Sheet D16913EJ1V0DS  
2SK3740  
•
The information in this document is current as of November, 2003. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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