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2SK2858-A

型号:

2SK2858-A

品牌:

NEC[ NEC ]

页数:

8 页

PDF大小:

52 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2858  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR HIGH SPEED SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK2858 is a switching device which can be driven directly by a  
2.5-V power source.  
2.1 ± 0.1  
1.25 ± 0.1  
The 2SK2858 has excellent switching characteristics, and is suitable for  
use as a high-speed switching device in digital circuits.  
2
FEATURES  
3
1
Can be driven by a 2.5-V power source  
Low gate cut-off voltage  
Marking  
ORDERING INFORMATION  
PART NUMBER  
2SK2858  
PACKAGE  
SC-70(SSP)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
V
V
30  
±20  
V
V
EQUIVALENT CIRCUIT  
GSS  
D(DC)  
I
±0.1  
A
Drain  
Electrode  
Drain Current (pulse) Note  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
D(pulse)  
Connection  
1.Source  
2.Gate  
I
±0.4  
A
Internal  
Diode  
T
P
150  
mW  
°C  
°C  
Gate  
3.Drain  
ch  
T
150  
Gate  
Protection  
Diode  
stg  
T
–55 to +150  
Source  
Note PW 10 µs, Duty Cycle 1 %  
Marking: G24  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published August 1999 NS CP(K)  
Printed in Japan  
D11706EJ2V0DS00 (2nd edition)  
The mark shows major revised points.  
1996, 1999  
©
2SK2858  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain Cut-off Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 30 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
1
µA  
µA  
V
Gate Leakage Current  
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 3 V, ID = 10 µA  
VDS = 3 V, ID = 10 m A  
VGS = 2.5 V, ID = 1 m A  
VGS = 4 V, ID = 10 mA  
VGS = 10 V, ID = 10 mA  
VDS = 3 V  
±10  
1.8  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
1.0  
20  
1.4  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
mS  
8
4
15  
8
3
5
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
9
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
VGS = 0 V  
12  
2.1  
40  
55  
68  
64  
Crss  
f = 1 MHz  
td(on)  
VDD = 3 V  
tr  
ID = 10 mA  
Turn-off Delay Time  
Fall Time  
td(off)  
VGS(on) = 4 V  
tf  
RG = 10 Ω, RL = 300 Ω  
2
Data Sheet D11706EJ2V0DS00  
2SK2858  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
100  
400  
300  
80  
V
GS = 4 V  
3.5 V  
60  
40  
20  
200  
100  
3 V  
2.5 V  
0
2
6
4
0
30  
60  
8
10  
90  
120  
150  
T
A - Ambient Temperature - ˚C  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMMITTANCE Vs.  
DRAIN CURRENT  
TRANSFER CHARACTERISTICS  
DS = 3 V  
1
0.1  
1000  
100  
V
VDS = 3 V  
0.01  
0.001  
TA  
= 125˚C  
75˚C  
25˚C  
T
A
= 25˚C  
25˚C  
25˚C  
10  
1
0.0001  
0.00001  
75˚C  
125˚C  
0.0001  
0.001  
0.01  
0.1  
1
0.000001  
4.0  
5.0  
2.0  
3.0  
1.0  
I
D - Drain Current - A  
VGS - Gate to Sorce Voltage - V  
DRAIN TO SOURCE ON-STATE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
RESISTANCE vs. DRAIN CURRENT  
15  
10  
20  
15  
10  
V
GS = 4 V  
V
GS = 2.5 V  
TA = 125˚C  
75˚C  
25˚C  
25˚C  
T
A
= 125˚C  
75˚C  
25˚C  
25˚C  
5
0
5
10  
0.0001  
0.001  
0.1  
0.001  
0.01  
- Drain Current - A  
0.01  
0.0001  
0.1  
1
I
D
- Drain Current - A  
ID  
3
Data Sheet D11706EJ2V0DS00  
2SK2858  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
10  
8
30  
VGS = 10 V  
I
D
= 1 mA  
10 mA  
100 mA  
20  
6
T
A
= 125˚C  
75˚C  
4
10  
0
25˚C  
25˚C  
2
0
12  
16  
4
8
20  
0.1  
1
0.0001  
0.001  
0.01  
ID - Drain Current - A  
V
GS - Gate to Source Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
100  
1000  
f = 1 MHz  
GS = 0 V  
V
10  
1
C
Coissss  
t
r
100  
t
tdf(on)  
C
rss  
td(off)  
V
DD = 3 V  
V
GS(on) = 4V  
R
G
= 10 Ω  
0.1  
0.01  
10  
0.1  
1
0.1  
10  
100  
1
10  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
1
0.1  
0.01  
0.001  
0.0001  
0.8  
F(S-D) - Source to Drain Voltage - V  
1.2  
1.0  
0.4  
0.6  
V
4
Data Sheet D11706EJ2V0DS00  
2SK2858  
[MEMO]  
5
Data Sheet D11706EJ2V0DS00  
2SK2858  
[MEMO]  
6
Data Sheet D11706EJ2V0DS00  
2SK2858  
[MEMO]  
7
Data Sheet D11706EJ2V0DS00  
2SK2858  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
厂商 型号 描述 页数 下载

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