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2SK2315TYTL

型号：

2SK2315TYTL

品牌：

HITACHI[ HITACHI SEMICONDUCTOR ]

页数：

7 页

PDF大小：

41 K

下载PDF手册
2SK2315  
Silicon N-Channel MOS FET  
Application  
High speed power switching  
Features  
•
•
•
•
•
Low on-resistance  
High speed switching  
Low drive current  
2.5 V gate drive device can be driven from 3 V source.  
Suitable for DC-DC converter, motor drive, power switch, solenoid drive  
Outline  
UPAK  
1
2
3
4
D
1. Gate  
G
2. Drain  
3. Source  
4. Drain  
S
2SK2315  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
60  
VGSS  
±20  
V
ID  
2
A
1
Drain peak current  
ID(pulse)  
*
4
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
2
A
Pch*2  
Tch  
1
W
°C  
°C  
Channel temperature  
Storage temperature  
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
150  
Tstg  
–55 to +150  
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)  
3. Marking is “TY”  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
60  
—
—
V
ID = 10 mA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
—
—
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
—
—
0.5  
—
—
—
—
0.4  
±5  
5
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = 50 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 0.3 A  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage  
VGS(off)  
1.5  
0.6  
Static drain to source on state RDS(on)  
resistance  
Ω
V
GS = 3 V*1  
ID = 1 A  
GS = 4 V*1  
ID = 1 A  
DS = 10 V*1  
—
0.35  
1.8  
0.45  
—
Ω
V
Forward transfer admittance  
|yfs|  
1.5  
S
V
Input capacitance  
Output capacitance  
Ciss  
—
—
—
—
—
173  
85  
—
—
—
—
—
pF  
pF  
pF  
ns  
ns  
VDS = 10 V  
VGS = 0  
Coss  
Reverse transfer capacitance Crss  
23  
f = 1 MHz  
Turn-on time  
ton  
toff  
21  
ID = 1 A, RL = 30 Ω  
VGS = 10 V  
Turn-off time  
85  
Note 1. Pulse Test  
2
2SK2315  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
1.6  
1.2  
0.8  
0.4  
5
100 µs  
2
1
0.5  
0.2  
0.1  
Operation in  
this area is  
limited by R  
DS(on)  
0.05  
0.02  
Ta = 25 °C  
1 shot pulse  
0.01  
0.005  
0
50  
100  
150  
200  
0.2 0.5  
1
2
5
10 20  
50 100 200  
Drain to Source Voltage  
V
(V)  
DS  
Ambient Temperature Ta (°C)  
Typical Output Characteristics  
Typical Transfer Characteristics  
5
5
10 V  
5 V  
4 V  
Ta = 25 °C  
Pulse Test  
4
3
2
1
4
3
2
1
3.5 V  
3 V  
Tc = 75 °C  
25 °C  
–25 °C  
2.5 V  
2 V  
= 1.5 V  
6
V
= 10 V  
DS  
Pulse Test  
V
GS  
0
2
4
8
10  
0
1
2
3
4
GS  
5
Drain to Source Voltage  
V
(V)  
DS  
Gate to Source Voltage  
V
(V)  
3
2SK2315  
Static Drain to Source State Resistance  
vs. Drain Current  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
5
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Ta = 25 °C  
Ta = 25 °C  
Pulse Test  
2
1
I
= 2 A  
D
V
GS  
= 3 V  
10 V  
0.5  
0.2  
0.1  
1 A  
0.5 A  
0.05  
0.1 0.2  
0.5  
1
2
5
10  
0
4
8
12  
16  
20  
Gate to Source Voltage  
V
(V)  
Drain Current  
I
(A)  
D
GS  
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
1.0  
10  
5
Tc = –25 °C  
25 °C  
0.8  
0.6  
0.4  
0.2  
75 °C  
I
= 2 A  
1 A  
D
2
1
V
GS  
= 3 V  
0.5 A  
0.5  
1 A  
0.5 A  
= 2 A  
V
= 10 V  
DS  
I
D
Pulse Test  
0.2  
0.1  
V
GS  
= 10 V  
0
0.1 0.2  
0.5  
1
2
5
10  
–40  
0
40  
80  
120  
160  
Drain Current I (A)  
Case Temperature Tc (°C)  
D
4
2SK2315  
Typical Capacitance vs.  
Drain to Source Voltage  
Dynamic Input Characteristics  
1000  
100  
100  
80  
60  
40  
20  
20  
16  
12  
8
V
GS  
V
= 50 V  
25 V  
DD  
Ciss  
10 V  
Coss  
V
DS  
Crss  
I
= 2 A  
10  
1
D
V
GS  
= 0  
4
0
V
= 50 V  
25 V  
10 V  
DD  
f = 1 MHz  
0
10  
20  
30  
40  
50  
(V)  
0
2
4
6
8
10  
Drain to Source Voltage V  
Gate Charge Qg (nc)  
DS  
Reverse Drain Current vs.  
Souece to Drain Voltage  
Switching Characteristics  
5
4
3
2
1
200  
100  
Pulse Test  
t
d(off)  
50  
t
f
20  
10  
5
10 V  
t
5 V  
r
t
d(on)  
V
= 0  
GS  
1.2  
V
V
= 10 V, PW = 2 µs  
= 30 V, duty < 1 %  
GS  
DD  
2
0
0.4  
0.8  
1.6  
SD  
2.0  
(V)  
0.05 0.1 0.2  
0.5  
1
2
5
Source to Drain Voltage  
V
Drain Current  
I
(A)  
D
5
Unit: mm  
4.5 ± 0.1  
1.5 ± 0.1  
0.44 Max  
1.8 Max  
(1.5)  
φ
1
0.53 Max  
0.48 Max  
0.44 Max  
1.5  
1.5  
3.0  
Hitachi Code  
JEDEC  
UPAK  
—
EIAJ  
Conforms  
Weight (reference value) 0.050 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
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