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2SK3481-Z-AZ

型号：

2SK3481-Z-AZ

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

78 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3481  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3481  
The 2SK3481 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3481-S  
FEATURES  
2SK3481-ZJ  
TO-263  
• Super low on-state resistance:  
2SK3481-Z  
TO-220SMDNote  
DS(on)1  
GS  
D
R
R
= 50 mΩ MAX. (V = 10 V, I = 15 A)  
Note TO-220SMD package is produced only  
DS(on)2  
GS  
D
= 58 mΩ MAX. (V = 4.5 V, I = 15 A)  
in Japan.  
iss  
iss  
• Low C : C = 2300 pF TYP.  
• Built-in gate protection diode  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
V
100  
±20  
V
V
A
A
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
C
D(DC)  
Drain Current (DC) (T = 25°C)  
I
±30  
Drain Current (pulse) Note1  
D(pulse)  
I
±60  
C
T1  
Total Power Dissipation (T = 25°C)  
P
56  
W
W
(TO-262)  
A
T2  
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
°C  
°C  
A
stg  
Storage Temperature  
T
–55 to +150  
26  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
68  
mJ  
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%  
(TO-263, TO-220SMD)  
ch  
DD  
G
GS  
2. Starting T = 25°C, V = 50 V, R = 25 Ω, V = 20 → 0 V  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
2.23  
83.3  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
2002  
Document No.  
Date Published January 2002 NS CP(K)  
Printed in Japan  
D15063EJ1V0DS00 (1st edition)  
©
2SK3481  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 100 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
10  
±10  
2.5  
µA  
µA  
V
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 15 A  
VGS = 10 V, ID = 15 A  
VGS = 4.5 V, ID = 15 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.5  
9
2.0  
18  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
40  
50  
58  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
44  
Input Capacitance  
2300  
230  
120  
13  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
VGS = 0 V  
f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
VDD = 50 V, ID = 15 A  
VGS = 10 V  
10  
Turn-off Delay Time  
Fall Time  
RG = 0 Ω  
53  
5.0  
48  
Total Gate Charge  
QG  
VDD = 80 V  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
7.0  
12  
ID = 30 A  
IF = 30 A, VGS = 0 V  
IF = 30 A, VGS = 0 V  
di/dt = 100 A/ µs  
1.0  
70  
ns  
nC  
Qrr  
160  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
D.U.T.  
L
RG = 25 Ω  
VGS  
0
RL  
90%  
PG.  
VGS  
VGS  
10%  
VDD  
50 Ω  
Wave Form  
RG  
VGS = 20 → 0 V  
PG.  
VDD  
90%  
ID  
0
90%  
10%  
tf  
BVDSS  
ID  
IAS  
VGS  
0
10%  
td(on)  
ID  
VDS  
Wave Form  
ID  
tr  
td(off)  
VDD  
τ
ton  
toff  
τ = 1  
µs  
Starting Tch  
Duty Cycle ≤ 1%  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
IG = 2 mA  
RL  
PG.  
VDD  
50 Ω  
2
Data Sheet D15063EJ1V0DS  
2SK3481  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
50  
40  
30  
120  
100  
80  
60  
20  
10  
40  
20  
0
0
20  
40 60  
80 100 120 140 160  
0
20 40  
60  
80 100 120 140 160  
T
C
- Case Temperature - ˚C  
T
C
- Case Temperature - ˚C  
FORWARD BIAS SAFE OPERATING AREA  
100  
I
D(pulse)  
I
D(DC)  
P
o
Limitewd  
er Dissipation  
10  
1
T
C
= 25˚C  
Single Pulse  
0.1  
0.1  
1
10  
100  
1000  
V
DS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
Rth(ch-A) = 83.3˚C/W  
10  
1
Rth(ch-C) = 2.23˚C/W  
0.1  
0.01  
T
C
= 25˚C  
Single Pulse  
µ
µ
1000  
10  
100  
1 m  
10 m  
100 m  
1
10  
100  
PW - Pulse Width - s  
3
Data Sheet D15063EJ1V0DS  
2SK3481  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
DRAIN TO SOURCE VOLTAGE  
100  
10  
80  
60  
40  
V
GS = 10 V  
TTA=−40˚C  
25˚C  
4.5 V  
1
0.1  
75˚C  
150˚C  
20  
0
Pulsed  
V
DS = 10 V  
0.01  
1
2
3
4
5
0
1
2
3
4
5
6
V
GS - Gate to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
80  
100  
10  
1
V
DS = 10 V  
Pulsed  
Pulsed  
60  
40  
20  
0
I
D
= 30 A  
15 A  
T
A
= 150˚C  
75˚C  
25˚C  
−40˚C  
0.1  
0.01  
0.01  
0.1  
1
10  
100  
0
5
10  
15  
20  
ID - Drain Current - A  
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
80  
60  
40  
20  
0
4
3
2
1
0
V
DS = 10 V  
Pulsed  
I
D = 1 mA  
V
GS = 4.5 V  
10 V  
0.1  
1
10  
100  
−50  
0
50  
100  
150  
I
D - Drain Current - A  
T
ch - Channel Temperature - ˚C  
4
Data Sheet D15063EJ1V0DS  
2SK3481  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
100  
10  
1
Pulsed  
Pulsed  
V
GS = 10 V  
0 V  
V
GS = 4.5 V  
10 V  
0.1  
I
D
= 15 A  
150  
0.01  
100  
ch - Channel Temperature - ˚C  
0
50  
−50  
0
0.5  
1.0  
1.5  
V
SD - Source to Drain Voltage - V  
T
CAPACITANCE vs.  
DRAIN TO SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
1000  
100  
10  
10000  
1000  
C
iss  
t
d(off)  
C
oss  
t
d(on)  
100  
10  
C
rss  
t
r
t
f
V
DD = 50 V  
GS = 10 V  
= 0 Ω  
V
GS = 0 V  
V
f = 1 MHz  
0.1  
DS - Drain to Source Voltage - V  
R
G
1
0.01  
1
10  
100  
0.1  
1
10  
100  
V
I - Drain Current - A  
D
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
100  
10  
8
1000  
100  
10  
µ
di/dt = 100 A/  
GS = 0 V  
s
V
80  
60  
40  
20  
0
V
DD = 80 V  
50 V  
V
GS  
20 V  
6
4
2
V
DS  
I
D
= 30 A  
0
1
0.1  
0
10  
20  
30  
40  
50  
60  
1
10  
- Drain Current - A  
100  
Q
G
- Gate Charge - nC  
I
F
5
Data Sheet D15063EJ1V0DS  
2SK3481  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
160  
140  
120  
100  
80  
1000  
100  
V
R
V
I
DD = 50 V  
= 25 Ω  
GS = 20 → 0 V  
AS ≤ 26 A  
G
I
AS = 26A  
= 50V  
60  
10  
1
40  
V
VDD = 20→0 V  
RGS  
Starting Tch = 25˚C  
G
= 25 Ω  
20  
0
25  
50  
75  
100  
125  
150  
0.001  
0.01  
0.1  
1
10  
Starting Tch - Starting Channel Temperature - ˚C  
L - Inductive Load - mH  
6
Data Sheet D15063EJ1V0DS  
2SK3481  
PACKAGE DRAWINGS (Unit: mm)  
1) TO-220AB (MP-25)  
2) TO-262 (MP-25 Fin Cut)  
4.8 MAX.  
1.3±0.2  
10.6 MAX.  
10.0 TYP.  
4.8 MAX.  
1.3±0.2  
φ
10 TYP.  
3.6±0.2  
4
1
2
3
4
1
2 3  
1.3±0.2  
1.3±0.2  
2.8±0.2  
0.5±0.2  
1.Gate  
0.75±0.3  
2.54 TYP.  
2.54 TYP.  
0.75±0.1  
2.54 TYP.  
0.5±0.2  
1.Gate  
2.Drain  
3.Source  
4.Fin (Drain)  
2.8±0.2  
2.54 TYP.  
2.Drain  
3.Source  
4.Fin (Drain)  
3) TO-263 (MP-25ZJ)  
4) TO-220SMD (MP-25Z)Note  
4.8 MAX.  
4.8 MAX.  
10 TYP.  
10 TYP.  
4
1.3±0.2  
1.3±0.2  
4
1
2
3
1
2
3
1.4±0.2  
1.4±0.2  
0.7±0.2  
0.75±0.3  
2.54 TYP.  
0.5±0.2  
0.5±0.2  
2.54 TYP.  
2.54 TYP.  
2.54 TYP.  
1.Gate  
1.Gate  
2.Drain  
3.Source  
2.Drain  
3.Source  
4.Fin (Drain)  
4.Fin (Drain)  
Note This package is produced only in Japan.  
EQUIVALENT CIRCUIT  
Remark The diode connected between the gate and source of the transistor  
serves as a protector against ESD. When this device actually used,  
an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
7
Data Sheet D15063EJ1V0DS  
2SK3481  
•
The information in this document is current as of January, 2002. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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