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2SK2596BXTR

型号:

2SK2596BXTR

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

5 页

PDF大小:

61 K

2SK2596  
Silicon N-Channel MOS FET  
UHF Power Amplifier  
REJ03G0207-0300  
(Previous ADE-208-1367(Z))  
Rev.3.00  
Feb.14.2005  
Features  
High power output, High gain, High efficiency  
PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz)  
Compact package capable of surface mounting  
Outline  
PLZZ0004CA-A  
(Previous code : UPAK)  
D
1
2
1. Gate  
3
2. Source  
3. Drain  
4. Source  
G
4
S
Note: Marking is “BX“.  
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
V
17  
±10  
V
0.4  
A
Note1  
Drain peak current  
ID(pulse)  
Pch Note2  
Tch  
1
A
Channel dissipation  
3
W
°C  
°C  
Channel temperature  
Storage temperature  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tc = 25°C  
150  
Tstg  
–45 to +150  
Rev.3.00, Feb.14.2005, page 1 of 4  
2SK2596  
Electrical Characteristics  
(Ta = 25°C)  
Test Conditions  
VDS = 12 V, VGS = 0  
Item  
Symbol  
IDSS  
IGSS  
Min.  
Typ  
Max.  
10  
Unit  
µA  
µA  
V
Zero gate voltage drain current  
Gate to source leak current  
Gate to source cutoff voltage  
Input capacitance  
±5.0  
1.1  
VGS = ±10 V, VDS = 0  
ID = 2 mA, VDS = 12 V  
VGS(off)  
Ciss  
0.4  
22  
pF  
pF  
VGS = 5 V, VDS = 0, f = 1 MHz  
VDS = 12 V, VGS = 0, f = 1 MHz  
Output capacitance  
Coss  
Pout  
10.5  
31.46  
Output Power  
30.2  
dBm VDS = 12 V, f = 836.5 MHz  
Pin = 18 dBm  
Drain Efficiency  
ηD  
45  
55  
%
VDS = 12 V, Pout = 30.2 dBm  
f = 836.5 MHz, Pin = 18 dBm  
Main Characteristics  
Maximum Channel Power  
Dissipation Curve  
Typical Output Characteristics  
Pulse test  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
4
3
2
1
6 V  
5 V  
4 V  
3 V  
VGS = 2 V  
8 10  
0
0
50  
100  
150  
200  
2
4
6
Drain to Source Voltage VDS (V)  
Case Temperature Tc (°C)  
Forward Transfer Admittance  
vs. Drain Current  
Typical Transfer Characteristics  
1.0  
0.5  
1.0  
0.8  
0.6  
0.4  
0.2  
Tc = -25°C  
25°C  
Tc = -25°C  
25°C  
0.2  
0.1  
75°C  
75°C  
0.05  
VDS = 12 V  
Pulse Test  
0.02  
0.01  
VDS = 12 V  
Pulse Test  
0
0.05  
1
2
3
4
5
0.01 0.02  
0.1 0.2  
0.5  
1
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.3.00, Feb.14.2005, page 2 of 4  
2SK2596  
Drain to Source Saturation Voltage  
vs. Drain Current  
Gate to Source Cutoff Voltage vs.  
Ambient Temperature  
10  
5
1.2  
1.0  
0.8  
0.6  
0.4  
25°C  
2
1
Tc = -25°C  
0.5  
75°C  
0.2  
0.1  
0.05  
0.2  
0
VDS = 12 V  
Pulse Test  
0.02  
0.01  
VDS = 12 V  
-25  
0.05  
0
25  
50  
75  
100 125  
0.01 0.02  
0.1 0.2  
0.5  
1
Ambient Temperature Ta (°C)  
Drain Current ID (A)  
Input Capacitance vs.  
Gate to Source Voltage  
Output Capacitance vs.  
Drain to Source Voltage  
24  
22  
20  
18  
100  
50  
20  
10  
5
16  
14  
VGS = 0  
f = 1 MHz  
2
1
VDS = 0  
f = 1 MHz  
-10  
-6  
-2  
2
6
10  
0.1 0.2  
0.5  
1
2
5
10 20  
Drain to Source VDS (V)  
Gate to Source Voltage VGS (V)  
Output Power, Drain Efficiency  
vs. Input Power  
Reverse Transfer Capacitance vs.  
Gate to Source Voltage  
100  
50  
2.5  
2.0  
1.5  
1.0  
0.5  
100  
80  
VDS = 12 V  
IDO = 100 mA  
f = 836.5 MHz  
20  
10  
5
Po  
60  
ηD  
40  
20  
0
VGS = 0  
f = 1 MHz  
2
1
0.1 0.2  
0.5  
1
2
5
10 20  
0
20  
40  
60  
80  
100  
Gate to Source Voltage VGS (V)  
Input power Pin (W)  
Rev.3.00, Feb.14.2005, page 3 of 4  
2SK2596  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Previous Code  
UPAK / UPAKV  
MASS[Typ.]  
0.050g  
Unit: mm  
SC-62  
PLZZ0004CA-A  
4.5 ± 0.1  
1.8 Max  
1.5 ± 0.1  
0.44 Max  
(1.5)  
φ
1
0.53 Max  
0.48 Max  
0.44 Max  
1.5  
1.5  
3.0  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK2596BX  
1000  
φ178 taping  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.3.00, Feb.14.2005, page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .2.0  
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