Silicon Junction FETs (Small Signal)
2SK374
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
unit: mm
2.8 –+00..32
1.5 –+00..0255
0.65±0.15
0.65±0.15
■ Features
● Low noise-figure (NF)
1
2
● High gate to drain voltage VGDO
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
3
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Symbol
VDSX
VGDO
VGSO
ID
Ratings
Unit
V
0.1 to 0.3
0.4±0.2
55
−55
V
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
−55
V
30
mA
mA
mW
°C
Gate current
IG
10
Marking Symbol (Example): 2B
Allowable power dissipation
Channel temperature
Storage temperature
PD
200
Tch
150
Tstg
−55 to +150
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
20
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
IDSS
VDS = 10V, VGS = 0
GS = −30V, VDS = 0
1
IGSS
VGDC
VGSC
gm
V
−10
IG = −100µA, VDS = 0
−55
−80
Gate to Source cut-off voltage
Mutual conductance
VDS = 10V, ID = 10µA
−5
V
VDS = 10V, ID = 5mA, f = 1kHz
2.5
7.5
6.5
1.9
mS
pF
Input capacitance (Common Source) Ciss
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
pF
VDS = 10V, VGS = 0, Rg = 100kΩ
Noise figure
NF
2.5
dB
f = 100Hz
* IDSS rank classification
Runk
P
Q
R
S
IDSS (mA)
1 to 3
2BP
2 to 6.5
2BQ
5 to 12
2BR
10 to 20
2BS
Marking Symbol
1
