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2SK3376TV-B

型号:

2SK3376TV-B

品牌:

TOSHIBA[ TOSHIBA ]

页数:

6 页

PDF大小:

152 K

2SK3376MFV  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK3376MFV  
For ECM  
Unit: mm  
Application for Ultra-compact ECM  
1.2±0.05  
0.8±0.05  
Absolute Maximum Ratings (Ta=25°C)  
Characteristic  
Gate-Drain voltage  
Symbol  
Rating  
Unit  
V
-20  
10  
V
1
2
GDO  
Gate Current  
I
mA  
mW  
°C  
G
3
Drain power dissipation (Ta = 25°C)  
Junction Temperature  
P
(Note 1)  
150  
D
T
j
125  
Storage temperature range  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
1.Drain  
2.Source  
3.Gate  
VESM  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
JEDEC  
JEITA  
-
-
TOSHIBA  
2-1L1C  
Note 1: Mounted on FR4 board  
Weight: 1.5mg (typ.)  
0.5mm  
0.45mm  
0.45mm  
0.4mm  
IDSS CLASSIFICATION  
A-Rank  
B-Rank  
C-Rank  
80 to 200µA  
170 to 300µA  
270 to 480µA  
BK-Rank 150 to 350µA  
Marking  
Equivalent Circuit  
D
Type Name  
IDSS Classification Symbol  
A :A-Rank  
B :B-Rank , BK-Rank  
C :C-Rank  
3
G
S
1
2007-11-01  
2SK3376MFV  
Electrical Characteristics (A-Rank IDSS Ta=25°C)  
Characteristic  
Drain Current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
V
V
V
V
V
V
V
= 2 V, V  
= 0  
80  
200  
240  
-0.8  
µA  
µA  
V
DSS  
DS  
DD  
DS  
DS  
DS  
DD  
DD  
DD  
DD  
GS  
= 2 V, RL= 2kΩ,Cg = 3pF  
= 2 V, I = 1μA  
Drain Current  
I
D
Gate-Source Cut-off Voltage  
Forward transfer admittance  
Input capacitance  
Voltage Gain  
V
-0.1  
0.7  
GS(OFF)  
|Y |  
D
= 2 V,V  
= 0V  
1.4  
5.5  
mS  
pF  
dB  
dB  
dB  
fs  
GS  
C
= 2 V, V  
= 0, f = 1 MHz  
GS  
iss  
Gv  
= 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz  
-13.5  
-9.0  
-2.0  
-4.0  
47  
Delta Voltage Gain  
Delta Voltage Gain  
Noise Voltage  
DGv(f)  
DGv(V)  
= 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz  
= 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz  
= 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve  
VN  
mV  
Filter  
Electrical Characteristics (B-Rank IDSS Ta=25°C)  
Characteristic  
Drain Current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
V
V
V
V
V
V
V
= 2 V, V  
= 0  
170  
300  
340  
-1.0  
µA  
µA  
V
DSS  
DS  
DD  
DS  
DS  
DS  
DD  
DD  
DD  
DD  
GS  
= 2 V, RL= 2kΩ,Cg = 3pF  
= 2 V, I = 1μA  
Drain Current  
I
D
Gate-Source Cut-off Voltage  
Forward transfer admittance  
Input capacitance  
Voltage Gain  
V
-0.15  
0.7  
GS(OFF)  
|Y |  
D
= 2 V,V  
= 0V  
1.4  
5.5  
mS  
pF  
dB  
dB  
dB  
fs  
GS  
C
= 2 V, V  
= 0, f = 1 MHz  
GS  
iss  
Gv  
= 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz  
-11.5  
-8.0  
-2.0  
-7.0  
50  
Delta Voltage Gain  
Delta Voltage Gain  
Noise Voltage  
DGv(f)  
DGv(V)  
= 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz  
= 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz  
= 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve  
VN  
mV  
Filter  
Electrical Characteristics (C-Rank IDSS Ta=25°C)  
Characteristic  
Drain Current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
V
V
V
V
V
V
V
= 2 V, V  
= 0  
270  
480  
520  
-1.2  
µA  
µA  
V
DSS  
DS  
DD  
DS  
DS  
DS  
DD  
DD  
DD  
DD  
GS  
= 2 V, RL= 2kΩ,Cg = 3pF  
= 2 V, I = 1μA  
Drain Current  
I
D
Gate-Source Cut-off Voltage  
Forward transfer admittance  
Input capacitance  
Voltage Gain  
V
-0.2  
0.7  
GS(OFF)  
|Y |  
D
= 2 V,V  
= 0V  
1.4  
5.5  
mS  
pF  
dB  
dB  
dB  
fs  
GS  
C
= 2 V, V  
= 0, f = 1 MHz  
GS  
iss  
Gv  
= 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz  
-10.5  
-6.75  
-2.0  
-20  
75  
Delta Voltage Gain  
Delta Voltage Gain  
Noise Voltage  
DGv(f)  
DGv(V)  
= 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz  
= 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz  
= 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve  
VN  
mV  
Filter  
2
2007-11-01  
2SK3376MFV  
Electrical Characteristics (BK-Rank IDSS Ta=25°C)  
Characteristic  
Drain Current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
V
V
V
V
V
V
V
= 2 V, V  
= 0  
150  
350  
390  
-1.1  
µA  
µA  
V
DSS  
DS  
DD  
DS  
DS  
DS  
DD  
DD  
DD  
DD  
GS  
= 2 V, RL= 2kΩ,Cg = 3pF  
= 2 V, I = 1μA  
Drain Current  
I
D
Gate-Source Cut-off Voltage  
Forward transfer admittance  
Input capacitance  
Voltage Gain  
V
-0.125  
0.7  
GS(OFF)  
|Y |  
D
= 2 V,V  
= 0V  
1.4  
5.5  
mS  
pF  
dB  
dB  
dB  
fs  
GS  
C
= 2 V, V  
= 0, f = 1 MHz  
GS  
iss  
Gv  
= 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz  
-12.0  
-7.50  
-2.0  
-13.5  
65  
Delta Voltage Gain  
Delta Voltage Gain  
Noise Voltage  
DGv(f)  
DGv(V)  
= 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz  
= 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz  
= 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve  
VN  
mV  
Filter  
3
2007-11-01  
2SK3376MFV  
I
– V  
I – V  
D GS  
D
DS  
600  
500  
600  
500  
VDS=2V  
Common Source  
Ta = 25 °C  
Common Source  
Ta = 25 °C  
IDSS=450μA  
IDSS=200μA  
400  
300  
400  
300  
+ 0.1 V  
300μA  
+ 0.05 V  
VGS = 0 V  
200μA  
200  
100  
0
200  
100  
0
– 0.05 V  
– 0.1 V  
100μA  
-0.4  
-1.0  
-0.8  
-0.6  
-0.2  
0
1.0  
0
2.0  
Drain - Source voltage  
V
(V)  
Gate - Source voltage  
V
(V)  
GS  
GS  
V
– I  
DSS  
GS(OFF)  
|Yfs| – I  
DSS  
-500  
-400  
3
2
1
-300  
-200  
VGS(OFF):VDS=2V  
ID = 1μA  
|Yfs|:VDS=2V  
VGS=0V  
IDSS:VDS=2V  
VGS=0V  
IDSS: VDS=2V  
VGS=0V  
-100  
0
Common Source  
Common Source  
Ta = 25 °C  
Ta = 25 °C  
0
0
100  
200  
300  
400  
500  
600  
100  
200  
300  
600  
400  
500  
Drain Current  
I
(µA)  
DSS  
Drain Current  
I
(µA)  
DSS  
DGv(V)– I  
DSS  
Gv– I  
DSS  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0
0
DGv:VDD=2V to 1.5V  
Cg=5pF  
RL= 2.2kΩ,  
f=1kHz  
– 1  
vin=100mV  
IDSS: VDS=2V  
VGS=0V  
– 2  
– 3  
Common Source  
Ta = 25°C  
Gv:VDD=2V  
Cg=5pF  
RL= 2.2kΩ,  
f=1kHz  
vin=100mV  
IDSS: VDS=2V  
VGS=0V  
Common Source  
Ta = 25°C  
– 4  
– 5  
0
100  
200  
300  
400  
500  
600  
0
100  
200  
300  
400  
500  
600  
Drain Current  
I
(µA)  
Drain Current  
I
(µA)  
DSS  
DSS  
4
2007-11-01  
2SK3376MFV  
VN – I  
THD– I  
DSS  
DSS  
2.0  
1.5  
1.0  
60  
50  
THD:VDD=2V  
Cg=5pF  
VN:VDD=2V  
Cg=10pF  
RL= 2.2kΩ  
f=1kHz  
vin=50mV  
RL= 1kΩ  
f=1kHz  
80dB AMP  
A-Curve Filter  
IDSS: VDS=2V  
VGS=0V  
IDSS: VDS=2V  
VGS=0V  
Common Source  
40  
30  
Common Source  
Ta = 25°C  
Ta = 25°C  
20  
10  
0
0.5  
0
0
100  
200  
300  
400  
500  
600  
0
100  
200  
300  
400  
500  
600  
Drain Current  
I
(µA)  
DSS  
Drain Current  
I
(µA)  
DSS  
C
iss  
– V  
DS  
10  
5
3
VGS=0V  
f=1kHz  
Common Source  
Ta = 25°C  
1
1
10  
5
Drain - Source voltage  
V
(V)  
DS  
5
2007-11-01  
2SK3376MFV  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-11-01  
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