请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3473(Q)

型号：

2SK3473(Q)

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

230 K

下载PDF手册
2SK3473  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)  
2SK3473  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
High forward transfer admittance: |Y | = 6.5S (typ.)  
= 1.3Ω (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (V  
= 720 V)  
DS  
DSS  
Enhancement mode: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
900  
900  
±30  
9
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
1. GATE  
Pulse (t = 1 ms)  
I
27  
DP  
2. DRAIN (HEAT SINK)  
3. SOURCE  
(Note 1)  
Drain power dissipation (Tc = 25°C)  
P
150  
413  
W
D
AS  
AR  
Single pulse avalanche energy  
E
mJ  
JEDEC  
―
(Note 2)  
JEITA  
SC-65  
2-16C1B  
Avalanche current  
I
9
15  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
TOSHIBA  
AR  
T
150  
ch  
Weight: 4.6 g (typ.)  
Storage temperature range  
T
-55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
2
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
0.833  
50  
°C/W  
°C/W  
th (ch-c)  
1
R
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150℃.  
Note 2: = 90 V, T = 25°C(initial), L = 9.35 mH, I = 9 A, R = 25 Ω  
V
DD  
ch  
AR  
G
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-10  
2SK3473  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±25 V, V  
= 0 V  
⎯
±30  
⎯
⎯
⎯
±10  
⎯
μA  
V
GSS  
GS  
I = ±10 μA, V  
D
DS  
Gate-source breakdown voltage  
Drain cut-off current  
V
V
= 0 V  
(BR) GSS  
GS  
= 720 V, V  
I
V
= 0 V  
⎯
100  
⎯
μA  
V
DSS  
DS  
= 10 mA, V  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
= 0 V  
900  
2.0  
⎯
⎯
(BR) DSS  
D
GS  
= 10 V, I = 1 mA  
V
V
V
V
⎯
4.0  
1.6  
⎯
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 4 A  
1.3  
6.5  
1450  
30  
Ω
S
DS (ON)  
⎪Y ⎪  
D
= 15 V, I = 4 A  
3.0  
⎯
fs  
D
C
C
⎯
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
DS  
rss  
C
⎯
155  
⎯
oss  
10 V  
GS  
0 V  
I
= 4 A  
V
OUT  
D
Rise time  
t
r
⎯
⎯
⎯
⎯
30  
55  
12  
75  
⎯
⎯
⎯
⎯
V
Turn-on time  
Switching time  
t
R
L
=
on  
4.7 Ω  
100 Ω  
ns  
Fall time  
t
f
∼
−
V
400 V  
DD  
<
Duty 1%, t = 10 μs  
Turn-off time  
t
=
w
off  
38  
22  
16  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Q
⎯
⎯
⎯
⎯
⎯
⎯
g
∼
−
V
400 V, V  
= 10 V, I = 9 A  
nC  
Q
DD  
GS  
D
gs  
gd  
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
9
Unit  
A
Continuous drain reverse current  
I
⎯
⎯
⎯
⎯
DR  
(Note 1)  
(Note 1)  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
I
⎯
⎯
⎯
⎯
⎯
⎯
27  
−1.7  
⎯
A
V
DRP  
V
I
I
= 9 A, V  
= 9 A, V  
= 0 V  
DSF  
DR  
DR  
GS  
t
= 0 V,  
1350  
15  
ns  
μC  
rr  
GS  
dI /dt = 100 A/μs  
Q
rr  
⎯
DR  
Marking  
TOSHIBA  
K3473  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-10  
2SK3473  
I
– V  
DS  
I
– V  
DS  
D
D
10  
20  
COMMON SOURCE  
Tc = 25°C  
COMMON SOURCE  
Tc = 25°C  
8
10  
6
10  
7
PULSE TEST  
PULSE TEST  
8
6
4
16  
12  
8
6.5  
5.5  
6
5.25  
5
5.5  
5
4.75  
4.5  
2
0
4
0
V
= 4 V  
GS  
V
= 4.5 V  
GS  
40  
4
8
12  
16  
20  
0
10  
20  
30  
50  
0
DRAIN-SOURCE VOLTAGE  
V
(V)  
DRAIN-SOURCE VOLTAGE  
V
(V)  
DS  
DS  
I
D
– V  
V
– V  
DS GS  
GS  
20  
20  
COMMON  
SOURCE  
Tc = 25℃  
COMMON SOURCE  
= 50 V  
V
DS  
I
= 9 A  
D
16 PULSE TEST  
16  
12  
8
PULSE TEST  
12  
8
4.5  
3
4
4
0
0
0
0
2
4
6
8
10  
4
8
12  
16  
20  
GATE-SOURCE VOLTAGE  
V
GS  
(V)  
GATE-SOURCE VOLTAGE  
V
GS  
(V)  
⎪Y ⎪ – I  
fs  
R
– I  
DS (ON) D  
D
10  
10  
COMMON SOURCE  
Tc = 25°C  
PULSE TEST  
Tc = −55°C  
V
= 10 V､15V  
GS  
25  
1
1
100  
COMMON SOURCE  
= 50 V  
V
DS  
PULSE TEST  
0.1  
0.1  
0.1  
0.01  
1
10  
1
10  
0.1  
DRAIN CURRENT  
I
(A)  
DRAIN CURRENT  
I
(A)  
D
D
3
2006-11-10  
2SK3473  
R
– Tc  
I
– V  
DS (ON)  
DR  
DS  
5
4
3
2
1
10  
COMMON SOURCE  
Tc = 25°C  
COMMON SOURCE  
PULSE TEST  
5
3
PULSE TEST  
I
= 9A  
D
1
4.5  
0.5  
0.3  
3
3
5
10  
V
= 0, −1 V  
GS  
1
0
−80  
0.1  
0
−0.2  
−0.6  
−1  
−1.2  
−40  
0
40  
80  
120  
160  
−0.4  
−0.8  
CASE TEMPERATURE Tc (°C)  
DRAIN-SOURCE VOLTAGE  
V
(V)  
DS  
CAPACITANCE – V  
V
– Tc  
th  
DS  
10000  
5
4
3
2
1
C
iss  
1000  
100  
10  
C
oss  
COMMON SOURCE  
= 0 V  
COMMON SOURCE  
= 10 V  
V
GS  
C
rss  
V
DS  
= 1 mA  
f = 1 MHz  
Tc = 25°C  
I
D
PULSE TEST  
0
−80  
0.1  
1
3
5
10  
30 50 100  
−40  
0
40  
80  
120  
160  
DRAIN-SOURCE VOLTAGE  
V
(V)  
CASE TEMPERATURE Tc (°C)  
DS  
DYNAMIC INPUT / OUTPUT  
CHARACTERISTICS  
P
– Tc  
D
200  
600  
12  
500  
400  
300  
200  
100  
0
10  
8
160  
120  
80  
V
= 100 V  
DD  
V
DS  
200  
400  
6
V
GS  
4
COMMON SOURCE  
= 9 A  
I
D
40  
0
Tc = 25°C  
2
PULSE TEST  
0
40  
0
40  
80  
120  
160  
200  
0
10  
20  
30  
CASE TEMPERATURE Tc (°C)  
TOTAL GATE CHARGE  
Q
g
(nC)  
4
2006-11-10  
2SK3473  
r
th  
– t  
w
10  
5
3
1
Duty = 0.5  
0.5  
0.3  
0.2  
0.1  
0.1  
0.05  
0.02  
0.05  
0.03  
Single pulse  
P
DM  
t
0.01  
0.01  
T
0.005  
0.003  
Duty = t/T  
R
= 0.833°C/W  
th (ch-c)  
0.001  
10 μ  
100 μ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(S)  
w
Safe operating area  
E
AS  
– T  
ch  
100  
500  
50  
30  
I
max (pulsed) *  
100 μs *  
D
400  
300  
200  
100  
0
10  
1 ms *  
I
max (continuous)  
D
5
3
DC  
1
0.5  
0.3  
25  
50  
75  
100  
125  
150  
Channel temperature (initial)  
T
(°C)  
0.1  
ch  
* Single nonrepetitive pulse  
Tc = 25°C  
0.05  
0.03  
B
VDSS  
Curves must be derated linearly  
with increase in temperature.  
15 V  
I
AR  
V
max  
DSS  
−15 V  
0.01  
1
3
5
10  
30 50 100  
300 500 1000  
V
V
DS  
DD  
Drain-source voltage  
V
DS  
(V)  
Test circuit  
Wave form  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
VDSS  
2
R
V
= 25 Ω  
G
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
= 90 V, L = 9.35 mH  
B
VDSS  
DD  
5
2006-11-10  
2SK3473  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-10  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.188931s