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2SK3507-Z

型号:

2SK3507-Z

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

4 页

PDF大小:

59 K

PRELIMINARY PRODUCT INFORMATION  
MOS FIELD EFFECT TRANSISTOR  
2SK3507  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
ORDERING INFORMATION  
DESCRIPTION  
PART NUMBER  
2SK3507  
PACKAGE  
TO-251  
The 2SK3507 is N-channel MOS FET device that features a  
low on-state resistance and excellent switching characteristics,  
designed for low voltage high current applications such as  
DC/DC converter with synchronous rectifier.  
2SK3507-Z  
TO-252  
FEATURES  
4.5 V drive available  
Low on-state resistance,  
RDS(on)1 = 50 mMAX. ( VGS = 10 V, ID = 11 A)  
Low gate charge  
QG = 8 nC TYP. ( VDD = 24 V, VGS = 10 V, ID = 22 A)  
Built-in gate protection diode  
Surface mount device available  
(TO-251)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
VDSS  
VGSS  
30  
V
V
±16  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
ID(DC)  
ID(pulse)  
PT1  
±22  
±88  
A
A
(TO-252)  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation Note2  
20  
W
W
W
°C  
°C  
PT2  
1.5  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
PT3  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
Notes1. PW 10 µs, Duty Cycle 1%  
2. TA = 25°C, mounted on FR-4 board of 1225 mm 2×1.6 mm  
The information contained in this document is being issued in advance of the production cycle for the  
device. The parameters for the device may change before final production or NEC Corporation, at its own  
discretion, may withdraw the device prior to its production.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
2001  
©
Document No.  
Date Published March 2001 NS CP(K)  
Printed in Japan  
D15387EJ1V0PM00 (1st edition)  
2SK3507  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
VDS = 30 V, VGS = 0 V  
VGS = ±16 V, VDS = 0 V  
MIN.  
TYP.  
MAX.  
10  
UNIT  
IDSS  
µA  
µA  
IGSS  
±10  
2.5  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 11 A  
VGS = 10 V, ID = 11 A  
VGS = 4.5 V, ID = 11 A  
VDS = 10 V  
1.5  
2.5  
V
S
Forward Transfer Admittance  
Drain to Source On-state Resistance  
40  
55  
250  
100  
50  
18  
8
50  
73  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
Crss  
td(on)  
tr  
VGS = 0 V  
f = 1 MHz  
VDD = 15 V , ID = 11 A  
VGS(on) = 10 V  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
48  
10  
8
RG = 10 Ω  
Total Gate Charge  
QG  
VDD = 24 V  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
2
ID = 22 A  
3
IF = 22 A, VGS = 0 V  
IF = 22 A, VGS = 0 V  
di/dt = 100 A/µs  
1.0  
8.7  
7.8  
ns  
nC  
Qrr  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
D.U.T.  
I
G
= 2 mA  
RL  
V
V
GS  
R
L
90%  
GS(on)  
V
GS  
Wave Form  
V
10%  
RG  
0
PG.  
V
DD  
50 Ω  
PG.  
V
DD  
DS  
90%  
90%  
V
0
GS  
V
DS  
10% 10%  
V
DS  
Wave Form  
0
τ
t
d(on)  
t
r
t
d(off)  
tf  
τ = 1µs  
t
on  
toff  
Duty Cycle 1%  
2
Preliminary Product Information D15387EJ1V0PM  
2SK3507  
PACKAGE DRAWINGS (Unit : mm)  
1)TO-251  
2)TO-252  
2.3±0.2  
6.5±0.2  
6.5±0.2  
5.0±0.2  
2.3±0.2  
5.0±0.2  
0.5±0.1  
0.5±0.1  
4
4
1
2
3
1
2
3
1.3 MAX.  
0.9  
0.8  
1.3 MAX.  
MAX. MAX.  
2.3 2.3  
0.8  
1. Gate  
0.6±0.1  
0.6±0.1  
2. Drain  
3. Source  
2.3 2.3  
1.Gate  
2.Drain  
4. Fin (Drain)  
3.Source  
4.Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Gate  
Protection  
Diode  
Source  
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and  
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as  
much as possible, and quickly dissipate it once, when it has occurred.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
3
Preliminary Product Information D15387EJ1V0PM  
2SK3507  
The information contained in this document is being issued in advance of the production cycle for the  
device. The parameters for the device may change before final production or NEC Corporation, at its own  
discretion, may withdraw the device prior to its production.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M5 98. 8  
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