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2SK2553(S)-(1)

型号：

2SK2553(S)-(1)

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

9 页

PDF大小：

45 K

下载PDF手册
2SK2553(L), 2SK2553(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-357H (Z)  
9th. Edition  
Feb. 1999  
Application  
High speed power switching  
Features  
•
•
•
•
Low on-resistance  
RDS(on) = 7 mΩ typ.  
High speed switching  
4 V gate drive device can be driven from 5 V source  
Outline  
LDPAK  
4
4
1
2
3
1
2
3
D
G
1. Gate  
2. Drain  
3. Source  
4. Drain  
S
2SK2553  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
60  
VGSS  
ID  
ID(pulse)  
IDR  
±20  
V
50  
A
Note 1  
Drain peak current  
Body to drain diode reverse drain current  
Avalanche current  
200  
A
50  
A
Note 3  
IAP  
45  
A
Note 3  
Note 2  
Avalanche energy  
EAR  
Pch  
Tch  
174  
mJ  
W
°C  
°C  
Channel dissipation  
Channel temperature  
Storage temperature  
75  
150  
Tstg  
–55 to +150  
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg ≥ 50 Ω  
2
2SK2553  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
60  
—
—
V
ID = 10 mA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
—
—
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
—
—
1.0  
—
—
—
—
7
±10  
10  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
VDS = 60 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 25 A  
Zero gate voltage drain current IDSS  
Gate to source cutoff voltage  
VGS(off)  
2.0  
10  
Static drain to source on state RDS(on)  
resistance  
mΩ  
V
GS = 10 VNote 1  
ID = 25 A  
GS = 4 VNote 1  
ID = 25 A  
DS = 10 V Note 1  
—
10  
55  
16  
—
mΩ  
V
Forward transfer admittance  
|yfs|  
35  
S
V
Input capacitance  
Output capacitance  
Ciss  
—
—
—
—
—
—
—
—
3550  
1760  
500  
35  
—
—
—
—
—
—
—
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V  
VGS = 0  
Coss  
Reverse transfer capacitance Crss  
f = 1 MHz  
ID = 25 A  
VGS = 10 V  
RL = 1.2 Ω  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
230  
470  
360  
0.85  
Turn-off delay time  
Fall time  
Body to drain diode forward  
voltage  
VDF  
IF = 50 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
—
135  
—
ns  
IF = 50 A, VGS = 0  
diF / dt = 50 A / µs  
Note 1. Pulse Test  
See characteristic curves of 2SK2529.  
3
2SK2553  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
100  
75  
500  
200  
100  
50  
20  
50  
10  
5
Operation in  
this area is  
limited by R  
DS(on)  
25  
2
1
Ta = 25 °C  
0.5  
0
50  
100  
150  
200  
3
30  
0.1 0.3  
1
10  
100  
Drain to Source Voltage  
V
(V)  
Case Temperature Tc (°C)  
DS  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 1.67 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
4
2SK2553  
Avalanche Test Circuit  
Avalanche Waveform  
V
DSS  
1
2
2
E
=
• L • I  
•
AP  
AR  
V
– V  
DD  
DSS  
L
V
DS  
Monitor  
I
AP  
V
(BR)DSS  
Monitor  
I
AP  
Rg  
V
V
DD  
D. U. T  
DS  
I
D
Vin  
15 V  
50Ω  
V
DD  
0
Switching Time Test Circuit  
Waveform  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
90%  
R
L
10%  
10%  
90%  
Vin  
Vout  
V
DD  
Vin  
10 V  
10%  
50Ω  
= 30 V  
90%  
td(off)  
td(on)  
t
f
tr  
5
2SK2553  
Package Dimensions  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
1.3 ± 0.15  
10.2 ± 0.3  
2.59 ± 0.2  
1.2 ± 0.2  
1.27 ± 0.2  
+ 0.2  
– 0.1  
0.86  
0.76 ± 0.1  
2.54 ± 0.5  
0.4 ± 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (L)  
—
EIAJ  
—
Mass (reference value)  
1.4 g  
6
2SK2553  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.15  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
1.2 ± 0.2  
2.54 ± 0.5  
0.86  
– 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (S)-(1)  
—
EIAJ  
—
Mass (reference value)  
1.3 g  
7
2SK2553  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.2  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
1.2 ± 0.2  
2.54 ± 0.5  
0.86  
– 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (S)-(2)  
—
EIAJ  
—
Mass (reference value)  
1.35 g  
8
2SK2553  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
9
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ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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