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2SK2394-7

型号:

2SK2394-7

品牌:

ONSEMI[ ONSEMI ]

页数:

3 页

PDF大小:

124 K

Ordering number:EN4839A  
N-Channel Junction Silicon FET  
2SK2394  
Low-Noise HF Amplifier Applications  
Applications  
Package Dimensions  
unit:mm  
· AM tuner RF amplifier.  
· Low-noise amplifier.  
2050A  
[2SK2394]  
Features  
0.4  
0.16  
· Large y  
.
fs  
3
· Small Ciss.  
0 to 0.1  
· Small-sized package permitting 2SK2394-applied  
sets to be made small slim.  
· Ultralow noise figure.  
2
1
0.95  
0.95  
1.9  
2.9  
1 : Source  
2 : Drain  
3 : Gate  
SANYO : CP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Drain-to-Source Voltage  
V
15  
DSX  
Gate-to-Drain Voltage  
Gate Current  
V
–15  
V
GDS  
I
10  
50  
mA  
mA  
mW  
˚C  
G
Drain Current  
I
D
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
200  
D
Tj  
150  
Tstg  
–55 to +150  
˚C  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
–15  
max  
Gate-to-Drain Breakdown Voltage  
Gate Cutoff Current  
Cutoff Voltage  
V
I
=–10µA, V =0  
G DS  
V
nA  
V
(BR)GDS  
I
V
V
V
V
V
V
V
=–10V, V =0  
–1.0  
GSS  
GS  
DS  
V
=5V, I =100µA  
–0.3  
6.0*  
20  
–0.7  
–1.5  
GS(off)  
DS  
DS  
DS  
DS  
DS  
DS  
D
I
=5V, V =0  
GS  
Drain Current  
32.0*  
mA  
mS  
pF  
pF  
dB  
DSS  
Forward Transfer Admittance  
Input Capacitance  
| y  
|
=5V, V =0, f=1kHz  
GS  
=5V, V =0, f=1MHz  
GS  
38  
10.0  
2.9  
fs  
Ciss  
Crss  
NF  
Reverse Transfer Capacitance  
Noise Figure  
=5V, V =0, f=1MHz  
GS  
=5V, Rg=1k, I =1mA, f=1kHz  
1.0  
D
* : The 2SK2394 is classified by I  
Marking : YJ  
as follows : (unit : mA)  
DSS  
6.0  
5
12.0 10.0  
6
20.0 16.0  
7
32.0  
I
rank : 5, 6, 7  
DSS  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
22299TS/73094MT (KOTO) BX-1128 No.4839–1/3  
2SK2394  
No.4839–2/3  
2SK2394  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of February, 1999. Specifications and information herein are subject  
to change without notice.  
PS No.4839–3/3  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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