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2SK3147(S)-3

型号：

2SK3147(S)-3

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

14 页

PDF大小：

77 K

下载PDF手册
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with  
semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate  
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or  
(iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas  
Technology Corporation product best suited to the customer's application; they do not convey any  
license under any intellectual property rights, or any other rights, belonging to Renesas Technology  
Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any  
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or  
circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and  
algorithms represents information on products at the time of publication of these materials, and are  
subject to change by Renesas Technology Corporation without notice due to product improvements or  
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation  
or an authorized Renesas Technology Corporation product distributor for the latest product information  
before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss  
rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corporation by various  
means, including the Renesas Technology Corporation Semiconductor home page  
(http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams,  
charts, programs, and algorithms, please be sure to evaluate all information as a total system before  
making a final decision on the applicability of the information and products. Renesas Technology  
Corporation assumes no responsibility for any damage, liability or other loss resulting from the  
information contained herein.  
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device  
or system that is used under circumstances in which human life is potentially at stake. Please contact  
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor  
when considering the use of a product contained herein for any specific purposes, such as apparatus or  
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in  
whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be  
exported under a license from the Japanese government and cannot be imported into a country other  
than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the  
country of destination is prohibited.  
8. Please contact Renesas Technology Corporation for further details on these materials or the products  
contained therein.  
2SK3147(L), 2SK3147(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
ADE-208-731 (Z)  
1st. Edition  
Feb. 1999  
Features  
•
Low on-resistance  
RDS =0.1 Ω typ.  
•
•
High speed switching  
4V gate drive device can be driven from 5V source  
Outline  
DPAK–2  
4
4
D
2
3
1
2
3
1
G
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
2
3
S
2SK3147(L),2SK3147(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
100  
VGSS  
ID  
±20  
V
5
A
Note1  
Drain peak current  
ID(pulse)  
20  
A
Body-drain diode reverse drain current IDR  
5
A
Note3  
Note3  
Avalanche current  
Avalanche energy  
Channel dissipation  
Channel temperature  
Storage temperature  
IAP  
5
A
EAR  
2.5  
mJ  
W
°C  
°C  
Pch Note2  
20  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
3. Value at Tch = 25°C, Rg 50Ω  
2
2SK3147(L),2SK3147(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
100  
—
—
V
ID = 10mA, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
±20  
—
—
V
IG = ±100µA, VDS = 0  
Gate to source leak current  
IGSS  
IDSS  
—
—
—
—
±10  
10  
µA  
µA  
VGS = ±16V, VDS = 0  
VDS = 100 V, VGS = 0  
Zero gate voltege drain  
current  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
1.0  
—
—
3.5  
—
—
—
—
—
—
—
—
—
2.5  
0.13  
0.18  
—
V
ID = 1mA, VDS = 10V  
ID = 3A, VGS = 10VNote4  
ID = 3A, VGS = 4VNote4  
ID = 3A, VDS = 10VNote4  
VDS = 10V  
0.1  
0.13  
6
Ω
resistance  
RDS(on)  
Ω
Forward transfer admittance |yfs|  
S
Input capacitance  
Output capacitance  
Ciss  
420  
185  
100  
10  
—
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Coss  
—
VGS = 0  
Reverse transfer capacitance Crss  
—
f = 1MHz  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
—
ID = 3A, VGS = 10V  
RL = 10Ω  
35  
—
Turn-off delay time  
Fall time  
110  
60  
—
—
Body–drain diode forward  
voltage  
VDF  
0.85  
—
IF = 5A, VGS = 0  
Body–drain diode reverse  
recovery time  
trr  
—
85  
—
ns  
IF = 5A, VGS = 0  
diF/ dt =50A/µs  
Note: 4. Pulse test  
3
2SK3147(L),2SK3147(S)  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
50  
20  
40  
30  
20  
10  
10  
5
2
1
Operation in  
this area is  
limited by R  
DS(on)  
0.5  
0.2  
0.1  
Ta = 25 °C  
0
1
2
5
10 20 50 100 200  
500  
50  
100  
150  
200  
Drain to Source Voltage  
V
(V)  
DS  
Case Temperature Tc (°C)  
Typical Transfer Characteristics  
Typical Output Characteristics  
10 V  
10  
8
10  
8
Pulse Test  
V
= 10 V  
DS  
Pulse Test  
3.5 V  
6 V  
4 V  
6
6
3 V  
4
4
Tc = 75°C  
–25°C  
2
2
V
GS  
=2.5 V  
25°C  
0
0
1
2
3
4
GS  
5
2
4
6
8
10  
Gate to Source Voltage  
V
(V)  
Drain to Source Voltage  
V
(V)  
DS  
4
2SK3147(L),2SK3147(S)  
Drain to Source Saturation Voltage vs.  
Gate to Source Voltage  
Static Drain to Source on State Resistance  
vs. Drain Current  
0.5  
2.5  
2.0  
1.5  
1.0  
0.5  
Pulse Test  
Pulse Test  
0.2  
0.1  
V
= 4 V  
GS  
10 V  
0.05  
I
= 5 A  
D
0.02  
0.01  
2 A  
1 A  
16  
12  
Gate to Source Voltage  
0
4
8
20  
0.1 0.2 0.5  
1
2
5
I
10 20 50  
(A)  
V
(V)  
Drain Current  
GS  
D
Forward Transfer Admittance vs.  
Drain Current  
Static Drain to Source on State Resistance  
vs. Temperature  
50  
0.50  
Pulse Test  
20  
10  
5
0.40  
0.30  
0.20  
0.10  
Tc = –25 °C  
25 °C  
1, 2 A  
5 A  
V
= 4 V  
GS  
75 °C  
2
5 A  
1, 2 A  
1
V
= 10 V  
DS  
Pulse Test  
10 V  
0
–40  
0.5  
0.1 0.3  
0
40  
80  
120  
c (°C)  
160  
1
3
10 30  
100  
Case Temperature  
T
Drain Current  
I
(A)  
D
5
2SK3147(L),2SK3147(S)  
Body–Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
1000  
500  
5000  
di / dt = 50 A / µs  
= 0, Ta = 25 °C  
V
2000  
1000  
500  
GS  
200  
100  
50  
Ciss  
200  
Coss  
Crss  
100  
50  
20  
10  
V
= 0  
20  
10  
GS  
f = 1 MHz  
0.1 0.3  
1
3
10  
30  
(A)  
100  
0
10  
20  
30  
40  
50  
Reverse Drain Current  
I
DR  
Drain to Source Voltage  
V
(V)  
DS  
Dynamic Input Characteristics  
= 5 A  
Switching Characteristics  
500  
300  
200  
160  
120  
80  
20  
I
D
V
= 100 V  
50 V  
DD  
t
d(off)  
16  
12  
8
100  
25 V  
t
f
V
30  
10  
GS  
V
DS  
t
r
t
d(on)  
= 10 V, V  
40  
4
0
3
1
V
= 100 V  
DD  
16  
V
= 30 V  
GS  
DD  
50 V  
25 V  
PW = 5 µs, duty < 1 %  
0
3
1
8
24  
32  
40  
0.1  
0.3  
10  
(A)  
30100  
Gate Charge Qg (nc)  
Drain Current  
I
D
6
2SK3147(L),2SK3147(S)  
Maximun Avalanche Energy vs.  
Channel Temperature Derating  
Reverse Drain Current vs.  
Source to Drain Voltage  
10  
8
2.5  
2.0  
1.5  
1.0  
I
= 5 A  
AP  
V
= 50 V  
DD  
duty < 0.1 %  
Rg > 50 Ω  
6
10 V  
4
V
= 0, –5 V  
GS  
5 V  
2
0.5  
0
Pulse Test  
1.6 2.0  
0
0.4  
0.8  
1.2  
25  
50  
75  
100  
125  
150  
Source to Drain Voltage  
V
(V)  
SD  
Channel Temperature Tch (°C)  
Avalanche Test Circuit  
Avalanche Waveform  
V
DSS  
– V  
1
2
2
E
=
• L • I  
•
AP  
AR  
V
DSS  
DD  
L
V
DS  
Monitor  
I
AP  
Monitor  
V
(BR)DSS  
I
AP  
Rg  
V
V
DD  
D. U. T  
DS  
I
D
Vin  
15 V  
50Ω  
V
DD  
0
7
2SK3147(L),2SK3147(S)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 6.25 °C/W, Tc = 25 °C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Switching Time Test Circuit  
Vin Monitor  
Waveform  
Vout  
Monitor  
90%  
D.U.T.  
R
L
10%  
10%  
Vin  
V
DD  
= 30 V  
Vin  
10 V  
Vout  
10%  
50Ω  
90%  
tr  
90%  
td(off)  
td(on)  
t
f
8
2SK3147(L),2SK3147(S)  
Package Dimensions  
As of January, 2001  
Unit: mm  
6.5 ± 0.5  
5.4 ± 0.5  
2.3 ± 0.2  
0.55 ± 0.1  
1.15 ± 0.1  
1.2 ± 0.3  
0.8 ± 0.1  
(0.7)  
0.55 ± 0.1  
0.55 ± 0.1  
2.29 ± 0.5  
2.29 ± 0.5  
Hitachi Code  
DPAK (L)-(2)  
JEDEC  
—
EIAJ  
—
Mass (reference value)  
0.42 g  
9
2SK3147(L),2SK3147(S)  
As of January, 2001  
Unit: mm  
2.3 ± 0.2  
0.55 ± 0.1  
6.5 ± 0.5  
5.4 ± 0.5  
(4.9)  
0 – 0.25  
1.15 ± 0.1  
0.8 ± 0.1  
0.55 ± 0.1  
2.29 ± 0.5  
2.29 ± 0.5  
Hitachi Code  
JEDEC  
EIAJ  
DPAK (S)-(1),(2)  
—
Conforms  
0.28 g  
Mass (reference value)  
10  
2SK3147(L),2SK3147(S)  
As of January, 2001  
Unit: mm  
2.3 ± 0.2  
0.55 ± 0.1  
6.5 ± 0.5  
5.4 ± 0.5  
(5.1)  
(0.1)  
(0.1)  
0 – 0.25  
1.15 ± 0.1  
0.8 ± 0.1  
0.55 ± 0.1  
2.29 ± 0.5  
2.29 ± 0.5  
Hitachi Code  
JEDEC  
DPAK (S)-(3)  
—
EIAJ  
Conforms  
0.28 g  
Mass (reference value)  
11  
2SK3147(L),2SK3147(S)  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
12  
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