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2SK3133(S)

型号:

2SK3133(S)

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

8 页

PDF大小:

38 K

2SK3133(L), 2SK3133(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
Target Specification  
ADE-208-720A (Z)  
2nd. Edition  
Mar. 2001  
Features  
Low on-resistance  
RDS(on) =7mtyp.  
Low drive current  
4V gate drive device can be driven from 5V source  
Outline  
LDPAK  
4
4
D
1
2
3
1
G
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
S
2SK3133(L),2SK3133(S)  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
30  
VGSS  
ID  
ID(pulse)  
±20  
V
50  
A
Note 1  
Drain peak current  
200  
A
Body-drain diode reverse drain current IDR  
50  
A
Channel dissipation  
Channel temperature  
Storage temperature  
Pch Note 2  
50  
W
°C  
°C  
Tch  
150  
Tstg  
–55 to +150  
Note: 1. PW 10µs, duty cycle 1 %  
2. Value at Tc = 25°C  
2
2SK3133(L),2SK3133(S)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
30  
V
ID = 10mA, VGS = 0  
Gate to source leak current  
IGSS  
IDSS  
±0.1  
µA  
µA  
VGS = ±20V, VDS = 0  
Zero gate voltege drain  
current  
10  
VDS = 30 V, VGS = 0  
Gate to source cutoff voltage VGS(off)  
Static drain to source on state RDS(on)  
resistance  
1.5  
TBD  
3.0  
10  
18  
V
ID = 1mA, VDS = 10V Note 1  
ID = 25A, VGS = 10V Note 1  
ID = 25A, VGS = 4.5V Note 1  
ID = 25A, VDS = 10V Note 1  
VDS = 10V  
7
mΩ  
mΩ  
S
12  
Forward transfer admittance |yfs|  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
Input capacitance  
Output capacitance  
Ciss  
pF  
pF  
pF  
nc  
nc  
nc  
ns  
ns  
ns  
ns  
V
Coss  
VGS = 0  
Reverse transfer capacitance Crss  
f = 1MHz  
Total gate charge  
Gate to source charge  
Gate to drain charge  
Turn-on delay time  
Rise time  
Qg  
Qgs  
Qgd  
td(on)  
tr  
VDD = 10V  
VGS = 10V  
ID = 50A  
VGS = 10V, ID = 25A  
RL = 0.4Ω  
Turn-off delay time  
Fall time  
td(off)  
tf  
Body–drain diode forward  
voltage  
VDF  
IF = 50A, VGS = 0  
Body–drain diode reverse  
recovery time  
trr  
TBD  
ns  
IF = 50A, VGS = 0  
diF/ dt =50A/µs  
Note: 1. Pulse test  
3
2SK3133(L),2SK3133(S)  
Main Characteristics  
Power vs. Temperature Derating  
80  
60  
40  
20  
0
50  
100  
150  
200  
Case Temperature Tc (°C)  
4
2SK3133(L),2SK3133(S)  
Package Dimensions  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
1.3 ± 0.15  
10.2 ± 0.3  
2.59 ± 0.2  
1.2 ± 0.2  
1.27 ± 0.2  
+ 0.2  
– 0.1  
0.86  
0.76 ± 0.1  
2.54 ± 0.5  
0.4 ± 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (L)  
EIAJ  
Mass (reference value)  
1.4 g  
5
2SK3133(L),2SK3133(S)  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.15  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
– 0.1  
1.2 ± 0.2  
0.86  
2.54 ± 0.5  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
LDPAK (S)-(1)  
EIAJ  
Mass (reference value)  
1.3 g  
6
2SK3133(L),2SK3133(S)  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
7.8  
6.6  
10.2 ± 0.3  
1.3 ± 0.2  
+ 0.2  
– 0.1  
0.1  
2.2  
1.27 ± 0.2  
0.4 ± 0.1  
+ 0.2  
1.2 ± 0.2  
2.54 ± 0.5  
0.86  
– 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
EIAJ  
LDPAK (S)-(2)  
Mass (reference value)  
1.35 g  
7
2SK3133(L),2SK3133(S)  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,  
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no  
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in  
connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact  
Hitachi’s sales office before using the product in an application that demands especially high quality and  
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,  
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment  
or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for  
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and  
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed  
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in  
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating  
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the  
Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
8
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