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2SK3864

型号：

2SK3864

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

238 K

下载PDF手册
2SK3864  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)  
2SK3864  
PDP Sustain Circuit Applications  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 20 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 75 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 120 V)  
DSS  
DSS  
Enhancement mode: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
Drain-gate voltage (R  
V
120  
120  
±20  
45  
V
V
V
DSS  
= 20 kΩ)  
V
DGR  
GS  
Gate-source voltage DC  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
180  
100  
DP  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
JEITA  
―
Single pulse avalanche energy  
(Note 2)  
SC-64  
2-10S2B  
E
84  
mJ  
TOSHIBA  
Avalanche current  
I
45  
10  
A
Weight: 1.5 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
−55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.25  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
Note 1: Ensure that the channel temperature does not exceed 150℃.  
Note 2: = 50 V, T = 25°C (initial), L = 54 µH, R = 25 Ω, I = 45 A  
V
DD  
ch AR  
G
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-20  
2SK3864  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±20 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
V
⎯
⎯
⎯
⎯
±100  
100  
⎯
nA  
µA  
V
GSS  
GS  
DS  
Drain cut-off current  
I
= 120 V, V  
= 0 V  
DSS  
(BR) DSS  
DS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
I
D
= 10 mA, V  
= 0 V  
120  
2.0  
⎯
⎯
GS  
V
V
DS  
V
GS  
V
DS  
= 10 V, I = 1 mA  
⎯
4.0  
25  
V
th  
D
R
= 10 V, I = 23 A  
20  
mΩ  
S
DS (ON)  
D
⎪Y  
⎪
= 10 V, I = 23 A  
38  
⎯
75  
⎯
fs  
D
C
C
4900  
210  
480  
⎯
iss  
V
DS  
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
rss  
C
oss  
⎯
⎯
Rise time  
t
r
⎯
⎯
⎯
⎯
7
27  
9
⎯
⎯
⎯
⎯
10 V  
I
= 23 A  
D
V
GS  
Output  
0 V  
Turn-on time  
Switching time  
t
on  
R
=
L
ns  
2.6 Ω  
Fall time  
t
f
V
60 V  
−
DD  
<
Duty 1%, t = 10 µs  
w
Turn-off time  
t
74  
off  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Q
⎯
⎯
⎯
83  
23  
60  
⎯
⎯
⎯
g
∼
−
V
DD  
96 V, V  
= 10 V, I = 45 A  
nC  
Q
GS  
D
gs  
gd  
Q
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
45  
180  
−1.7  
⎯
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
DRP  
V
I
I
= 45 A, V  
= 45 A, V  
= 0 V  
⎯
V
DSF  
DR  
DR  
GS  
GS  
t
= 0 V,  
75  
104  
ns  
µC  
rr  
dI /dt = 50 A/µs  
Q
⎯
DR  
rr  
Marking  
K3864  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2006-11-20  
2SK3864  
I
– V  
I – V  
D DS  
D
DS  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
Common source  
Tc = 25°C  
Pulse test  
10  
Common source  
Tc = 25°C  
Pulse test  
6
5.2  
10  
6
5.5  
5
8
8
5.2  
4.8  
5
4.8  
V
= 4.5 V  
GS  
V
GS  
= 4.5 V  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0
1
2
4
6
8
10  
Drain−source voltage  
V
DS  
(V)  
Drain−source voltage  
V
(V)  
DS  
I
– V  
V
– V  
D
GS  
DS GS  
50  
40  
30  
20  
10  
0
2.0  
1.6  
1.2  
0.8  
0.4  
0
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
45  
23  
Tc = −55°C  
100  
25  
I
D
= 11 A  
0
2
4
6
8
4
8
12  
16  
20  
Gate−source voltage  
V
(V)  
Gate−source voltage  
V
(V)  
GS  
GS  
R
− I  
D
⎪Y ⎪ − I  
DS (ON)  
fs  
D
100  
1000  
100  
10  
Common source  
= 10 V  
Common source  
Tc = 25°C  
Pulse test  
V
DS  
Pulse test  
Tc = −55°C  
V
= 10 V  
GS  
100  
10  
25  
1
1
1
100  
10  
100  
100  
10  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2006-11-20  
2SK3864  
I
− V  
DS  
DR  
R
– Tc  
DS (ON)  
50  
40  
100  
Common source  
Tc = 25°C  
Common source  
= 10 V  
Pulse test  
V
GS  
Pulse test  
I
D
= 45 A  
30  
20  
10  
0
10  
23  
10  
5
11  
3
1
V
GS  
= 0 V  
1
0
−0.4  
−0.8  
−1.2  
−1.6  
−80  
−40  
0
40  
80  
120  
160  
Drain−source voltage  
V
DS  
(V)  
Case temperature Tc (°C)  
Capacitance – V  
V
− Tc  
th  
DS  
10000  
1000  
100  
5
4
3
2
1
Common source  
= 10 V  
C
iss  
V
I
DS  
= 1 mA  
D
Pulse test  
C
oss  
C
rss  
Common source  
VGS = 0 V  
f = 1 MHz  
Tc = 25°C  
10  
0.1  
0
−80  
1
10  
100  
−40  
0
40  
80  
120  
160  
Drain−source voltage  
V
DS  
(V)  
Case temperature Tc (°C)  
P
D
− Tc  
Dynamic input/output characteristics  
100  
120  
25  
20  
Common source  
I
= 45 A  
D
V
DS  
Tc = 25°C  
100  
80  
Pulse test  
80  
60  
15  
V
= 24 V  
DS  
60  
40  
20  
0
40  
20  
0
10  
5
48  
96  
V
GS  
0
120  
80  
100  
0
40  
80  
120  
160  
0
20  
40  
60  
Total gate charge  
Q
g
(nC)  
Case temperature  
Tc (°C)  
4
2006-11-20  
2SK3864  
r
− t  
w
th  
10  
1
Duty = 0.5  
0.2  
0.1  
0.05  
0.02  
P
DM  
Single pulse  
0.1  
t
T
0.01  
Duty = t/T  
R
= 1.25°C/W  
th (ch-c)  
0.01  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(s)  
w
Safe operating area  
E
– T  
AS ch  
1000  
100  
10  
100  
I
max (pulsed) *  
D
80  
60  
40  
20  
0
100 µs *  
I
D
max (continuous)  
1 ms *  
DC Operation  
Tc = 25°C  
*
Single nonrepetitive pulse  
Tc = 25°C  
1
Curves must be derated  
linearly with increase in  
temperature.  
25  
50  
75  
100  
125  
150  
V
DSS  
max  
Channel temperature (initial) Tch (°C)  
0.1  
0.1  
1
10  
100  
1000  
Drain−source voltage  
V
DS  
(V)  
B
VDSS  
15 V  
0 V  
I
AR  
V
– V  
GS  
(BR)DSX  
140  
V
DD  
V
DS  
120  
100  
80  
60  
40  
20  
0
Test circuit  
Wave form  
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
V
= 25 Ω  
VDSS  
G
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
= 50 V, L = 54 µH  
B
VDSS  
DD  
0
−5  
−10  
−15  
−20  
−25  
Gate−source voltage  
V
GS  
(V)  
5
2006-11-20  
2SK3864  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
• The information contained herein is subject to change without notice.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
6
2006-11-20  
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