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2SK3884-01

型号：

2SK3884-01

品牌：

FUJI[ FUJI ELECTRIC ]

页数：

18 页

PDF大小：

395 K

下载PDF手册
SPECIFICATION  
Device Name  
Type Name  
Spec. No.  
Date  
:
:
:
:
Power MOSFET  
2SK3884-01  
MS5F5911  
Sep.-16-2004  
NAME  
APPROVED  
DATE  
Fuji Electric Device Technology Co.,Ltd.  
DRAWN Sep.-16-'04  
CHECKED Sep.-16-'04  
MS5F5911  
1 / 18  
Sep.-16-'04  
CHECKED  
H04-004-05  
Revised Records  
Date  
Classification  
enactment  
Index  
Content  
Drawn Checked Checked  
Approved  
Sep.-16  
2004  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
2 / 18  
H04-004-03  
This specifies Fuji Power MOSFET 2SK3884-01  
N-Channel enhancement mode power MOSFET  
for Switching  
1.Scope  
2.Construction  
3.Applications  
4.Outview  
TO-247  
Outview See to 8/18 page  
5.Absolute Maximum Ratings at Tc=25 C (unless otherwise specified)  
Description  
Symbol  
VDS  
VDSX  
ID  
Characteristics  
Unit  
V
Remarks  
250  
Drain-Source Voltage  
250  
V
VGS=-30V  
100  
Continuous Drain Current  
Pulsed Drain Current  
Gate-Source Voltage  
A
IDP  
± 400  
± 30  
A
VGS  
V
Repetitive and Non-repetitive  
Maximum Avalanche Current  
Non-Repetitive  
Maximum Avalanche Energy  
Repetitive  
IAR  
Note *1  
Note *2  
Note *3  
100  
2086.9  
60  
A
EAS  
EAR  
mJ  
mJ  
Maximum Avalanche Energy  
dVDS/dt  
dV/dt  
20  
5
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
VDS250V  
kV/s  
kV/s  
Note *4  
600  
Tc=25°C  
Ta=25°C  
PD  
Maximum Power Dissipation  
W
2.50  
150  
Tch  
Operating and Storage  
Temperature range  
C  
C  
Tstg  
-55 to +150  
6.Electrical Characteristics at Tc=25 C (unless otherwise specified)  
Static Ratings  
Description  
Drain-Source  
Symbol  
Conditions  
ID=250A  
min.  
250  
typ.  
-
max.  
-
Unit  
BV  
VGS=0V  
Breakdown Voltage  
Gate Threshold  
Voltage  
V
V
DSS  
ID=250A  
VDS=VGS  
VDS=250V  
VGS=0V  
VGS(th)  
3.0  
-
-
-
5.0  
25  
Zero Gate Voltage  
Drain Current  
Tch=25C  
A  
VDS=200V  
VGS=0V  
I
Tch=125C  
-
-
250  
DSS  
VGS= ± 30V  
VDS=0V  
Gate-Source  
I
Leakage Current  
Drain-Source  
-
-
-
100  
30  
nA  
GSS  
ID=50A  
R (on) VGS=10V  
On-State Resistance  
23.1  
m  
DS  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
3 / 18  
H04-004-03  
Dynamic Ratings  
Description  
Symbol  
Conditions  
ID=50A  
min.  
typ.  
max.  
Unit  
S
Forward  
g
VDS=25V  
VDS=75V  
VGS=0V  
f=1MHz  
Transconductance  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
12  
-
24  
6500  
700  
44  
-
fs  
Ciss  
9750  
1050  
66  
Coss  
-
pF  
Capacitance Crss  
td(on)  
-
-
-
-
-
-
-
-
Vcc=72V  
VGS=10V  
ID=50A  
56  
150  
104  
44  
84  
225  
156  
66  
Turn-On Time  
tr  
td(off)  
tf  
ns  
Turn-Off Time  
RGS=10  
Vcc=125V  
ID=100A  
VGS=10V  
QG  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
140  
52  
210  
78  
QGS  
QGD  
nC  
46  
69  
Reverse Diode  
Description  
Symbol  
Conditions  
min.  
typ.  
1.20  
450  
6.5  
max.  
Unit  
V
IF=100A  
VGS=0V  
IF=100A  
VGS=0V  
Diode Forward  
On-Voltage  
V
SD  
Tch=25C  
-
-
-
1.50  
Reverse Recovery  
Time trr  
Reverse Recovery  
Charge Qrr  
-
-
ns  
-di/dt=100A/s  
Tch=25C  
C  
7.Thermal Resistance  
Description  
Symbol  
min.  
typ.  
max.  
0.208  
50  
Unit  
C/W  
C/W  
Channel to Case  
Channel to Ambient  
Rth(ch-c)  
Rth(ch-a)  
Note *1 : Tch150C, See Fig.1 and Fig.2  
Note *2 : Starting Tch=25C,IAS=40A,L=2.19mH,Vcc=48V,RG=50,See Fig.1 and Fig.2  
EAS limited by maximum channel temperature and avalanche current.  
See to the 'Avalanche Energy' graph of page 17/18.  
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.  
See to the 'Transient Thermal impedance' graph of page 18/18.  
Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150C  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
4 / 18  
H04-004-03  
Fig.1 Test circuit  
L
50Ω  
D.U.T  
Vcc  
Fig.2 Operating waveforms  
+10V  
VGS  
-15V  
BVDSS  
IDP  
VDS  
ID  
0
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
5 / 18  
H04-004-03  
8.Reliability test items  
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).  
Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards.  
Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141  
Humidification treatment (85±2°C,65±5%RH,168±24hr)  
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)  
Test Test  
Testing methods and Conditions  
Reference  
Standard  
Sampling  
number  
Acceptance  
number  
No.  
Items  
EIAJ ED4701  
1 Terminal  
Strength  
(Tensile)  
Pull force  
TO-220,TO-220F : 10N  
TO-3P,TO-3PF,TO-247 : 25N  
TO-3PL : 45N  
A-111A  
15  
method 1  
T-Pack,K-Pack : 10N  
Force maintaining duration :30±5sec  
Load force  
2 Terminal  
Strength  
TO-220,TO-220F : 5N  
(Bending)  
TO-3P,TO-3PF,TO-247 : 10N  
TO-3PL : 15N  
A-111A  
15  
method 3  
T-Pack,K-Pack : 5N  
Number of times :2times(90deg./time)  
Screwing torque value: (M3)  
TO-220,TO-220F : 40±10Ncm  
TO-3P,TO-3PF,TO-247 : 50±10Ncm  
TO-3PL : 70±10Ncm  
3 Mounting  
Strength  
(0:1)  
A-112  
15  
15  
15  
15  
15  
method 2  
4 Vibration  
frequency : 100Hz to 2kHz  
Acceleration : 100m/s2  
Sweeping time : 20min./1 cycle  
6times for each X,Y&Z directions.  
Peak amplitude: 15km/s2  
Duration time : 0.5ms  
A-121  
test code C  
5 Shock  
A-122  
test code D  
3times for each X,Y&Z directions.  
6 Solderability  
   
Solder temp. : 235 5 C  
A-131A  
Immersion time : 50.5sec  
Each terminal shall be immersed in  
the solder bath within 1 to 1.5mm from  
the body.  
test code A  
7 Resistance to  
Soldering Heat  
   
Solder temp. : 260 5 C  
A-132  
Immersion time : 10 1sec  
Number of times : 2times  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
6 / 18  
H04-004-03  
Test Test  
Testing methods and Conditions  
Reference  
Standard  
EIAJ ED4701  
B-111A  
Sampling  
number  
Acceptance  
number  
No.  
Items  
1 High Temp.  
Storage  
Temperature : 150+0/-5°C  
Test duration : 1000hr  
22  
2 Low Temp.  
Storage  
Temperature : -55+5/-0°C  
Test duration : 1000hr  
B-112A  
22  
22  
22  
3 Temperature  
Humidity  
Temperature : 85±2°C  
Relative humidity : 85±5%  
Test duration : 1000hr  
B-121A  
test code C  
Storage  
4 Temperature  
Humidity  
Temperature : 85±2°C  
Relative humidity : 85±5%  
Bias Voltage : VDS(max) * 0.8  
B-122A  
BIAS  
test code C  
Test duration : 1000hr  
Temperature : 130±2°C  
Relative humidity : 85±5%  
Vapor pressure : 230kPa  
Test duration : 48hr  
5 Unsaturated  
Pressurized  
Vapor  
(0:1)  
B-123A  
22  
22  
22  
test code C  
6 Temperature  
Cycle  
   
High temp.side : 150 5 C  
B-131A  
Low temp.side : -555C  
Duration time : HT 30min,LT 30min  
test code A  
Number of cycles : 100cycles  
7 Thermal Shock Fluid : pure water(running water)  
B-141A  
High temp.side : 100+0/-5 C  
test code A  
Low temp.side : 0+5/-0C  
Duration time : HT 5min,LT 5min  
Number of cycles : 100cycles  
1 Intermittent  
Operating  
Life  
Ta=255C  
D-322  
22  
Tc=90degree  
TchTch(max.)  
Test duration : 3000 cycle  
Temperature : 150+0/-5°C  
Bias Voltage : VGS(max)  
2 HTRB  
(Gate-source)  
D-323  
D-323  
22  
22  
(0:1)  
Test duration : 1000hr  
3 HTRB  
Temperature : 150+0/-5°C  
(Drain-Source) Bias Voltage : VDS(max)  
Test duration : 1000hr  
Failure Criteria  
Symbols  
Failure Criteria  
Unit  
Item  
Breakdown Voltage  
Lower Limit  
LSL * 1.0  
-----  
Upper Limit  
-----  
BVDSS  
IDSS  
V
A
A
V
S
V
Zero gate Voltage Drain-Source Current  
Gate-Source Leakage Current  
Gate Threshold Voltage  
Drain-Source on-state Resistance  
Forward Transconductance  
Diode forward on-Voltage  
Marking  
USL * 2  
USL * 2  
USL * 1.2  
USL * 1.2  
-----  
IGSS  
-----  
VGS(th)  
RDS(on)  
gfs  
LSL * 0.8  
-----  
LSL * 0.8  
-----  
VSD  
USL * 1.2  
Soldering  
-----  
With eyes or Microscope  
-----  
and other damages  
* LSL : Lower Specification Limit  
* USL : Upper Specification Limit  
* Before any of electrical characteristics measure, all testing related to the humidity  
have conducted after drying the package surface for more than an hour at 150°C.  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
7 / 18  
H04-004-03  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
8 / 18  
H04-004-03  
9. Cautions  
･ Although Fuji Electric is continually improving product quality and reliability, a small percentage of  
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your  
equipment, you are requested to take adequate safety measures to prevent the equipment from  
causing physical injury, fire, or other problem in case any of the products fail. It is recommended to  
make your design fail-safe, flame retardant, and free of malfunction.  
･ The products described in this Specification are intended for use inthe following electronic and electrical  
equipment which has normal reliability requirements.  
･ Computers  
･ OA equipment  
･ AV equipment  
･ Communications equipment(Terminal devices)  
･ Measurement equipment  
･ Machine tools  
･ Personal equipment ･ Industrial robots  
･ Electrical home appliances etc.  
･ The products described in this Specificationare not designed or manufactured to be used in equipment  
or systems used under life-threatening situations. If you are considering using these products in the  
equipment listed below, first check the system construction and required reliability, and take adequate  
safety measures such as a backup system to prevent the equipment from malfunctioning.  
･ Backbone network equipment  
etc.)  
･ Transportation equipment (automobiles, trains, ships,  
･ Traffic-signal control equipment  
･ Submarine repeater equipment  
･ Medical equipment  
･ Gas alarms, leakage gas auto breakers  
･ Burglar alarms, fire alarms, emergency equipment  
･ Nuclear control equipment etc.  
･ Do not use the products in this Specification for equipment requiring strict reliability such as(but not  
limited to):  
･ Aerospace equipment  
10. Warnings  
･ Aeronautical equipment  
･ The MOSFETs should be used in products within their absolute maximum rating(voltage, current,  
temperature, etc.).  
･ The MOSFETs may be destroyed if used beyond the rating.  
･ We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous  
Avalanche capability which can be assumed as abnormal condition .Please note the device may be  
destructed from the Avalanche over the specified maximum rating.  
･ The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the  
equipment from causing secondary destruction (ex. fire, explosion etc...).  
･ Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The  
MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions.  
･ Be carefulwhen handling MOSFETs for ESD damage. (It is an important consideration.)  
･ Whenhandling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.  
･ It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor  
and tablemats.  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
9 / 18  
H04-004-03  
･ Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by  
grounding out through a high impedance resistor (about 1M )  
･ When soldering, inorder to protect the MOSFETs from static electricity, ground the soldering iron or  
soldering bath through a low impedance resistor.  
･ You must designthe MOSFETs to be operated within the specified maximum ratings(voltage, current,  
temperature, etc.) to prevent possible failure or destruction of devices.  
･ Consider the possible temperature rise not only for the channel and case, but also for the outer leads.  
･ Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in  
order to avoid electric shock and burns.  
･ The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or  
flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to  
emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrange-  
ment to prevent the spread of fire.  
･ The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive  
gas(hydrogen sulfide, sulfurous acid gas etc.)  
･ The MOSFETs should not used in an irradiated environment since they are not radiation-proof.  
Installation  
･ Soldering involves temperatures whichexceed the device storage temperature rating. To avoid device  
damage and to ensure reliability, observe the following guidelines from the quality assurance standard.  
Solder temperature and duration (through-hole package)  
Solder temperature  
2605 C  
Duration  
101 seconds  
3.50.5 seconds  
35010 C  
･ The immersion depth of the lead should basically be up to the lead stopper and the distance should be a  
maximum of 1.5mm from the device.  
･ When flow-soldering, be careful to avoid immersing the package in the solder bath.  
･ Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied  
to the mounting screw causes damage to the device and weak torque will increase the thermal resis-  
tance, both of whichconditions may destroy the device.  
Table 1: Recommended tightening torques.  
Packagestyle  
TO-220  
Screw  
M3  
Tightening torques  
Note  
30 – 50 Ncm  
TO-220F  
TO-3P  
flatness : <±30m  
roughness : <10m  
Plane off the edges :  
C<1.0mm  
M3  
M3  
40 – 60 Ncm  
60 –80 Ncm  
TO-3PF  
TO-247  
TO-3PL  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
10 / 18  
H04-004-03  
･ The heat sink should have a flatness within±30 m and roughness within 10 m. Also, keep the tighten-  
ing torque within the limits of this specification.  
･ Improper handling may cause isolation breakdownleading to a critical accident.  
ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm)  
･ We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to  
evenly apply the compound and to eliminate any air voids.  
Storage  
･ The MOSFETs must be stored at a standard temperature of 5 to 35 C and relative humidity of 45 to  
75%.  
･ If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or  
boiled water, since the chlorine in tap water may corrode the leads.  
･ The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the  
surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady.  
･ The MOSFETs should not be stored on top of each other, since this may cause excessive external force  
on the case.  
･ The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause  
presoldered connections to fail during later processing.  
･ The MOSFETs should be stored in antistatic containers or shipping bags.  
11.Appendix  
･ These products do not containPBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl  
Ether ).  
･ These products do not containClass-I ODS and Class-II ODS of ‘Clean Air Act of US’.  
･ If you have any questions about any part of this Specification, pleasecontact Fuji  
Electric or its sales agent before using the product.  
･ Neither Fuji nor its agents shall be held liable for any injury caused by using the products  
not in accordance with the instructions.  
･ The application examples described in this specification are merely typical uses of Fuji  
Electric products.  
･ This specification does notconfer any industrial propertyrights or other rights, nor  
constitute a license for such rights.  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
11 / 18  
H04-004-03  
Allowable Power Dissipation  
PD=f(Tc)  
800  
700  
600  
500  
400  
300  
200  
100  
0
0
25  
50  
75  
100  
125  
150  
Tc [C]  
Typical Output Characteristics  
ID=f(VDS):80 s pulse test,Tch=25 C  
160  
140  
120  
100  
80  
20V  
10V  
8V  
7V  
60  
6.5V  
40  
20  
VGS=6.0V  
0
0
5
10  
VDS [V]  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
12 / 18  
H04-004-03  
Typical Transfer Characteristic  
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C  
100  
10  
1
0.1  
0
1
2
3
4
5
6
7
8
9
10  
VGS[V]  
Typical Transconductance  
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C  
100  
10  
1
0.1  
0.1  
1
10  
100  
ID [A]  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
13 / 18  
H04-004-03  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80 s pulse test,Tch=25 C  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
7V  
VGS=6V 6.5V  
8V  
10V  
20V  
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140  
ID [A]  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=50A,VGS=10V  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
max.  
typ.  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [C]  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
14 / 18  
H04-004-03  
Gate Threshold Voltage vs. Tch  
VGS(th)=f(Tch):VDS=VGS,ID=250A  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
max.  
min.  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [C]  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=100A,Tch=25 C  
14  
12  
10  
8
Vcc= 50V  
125V  
200V  
6
4
2
0
0
50  
100  
150  
200  
250  
Qg [nC]  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
15 / 18  
H04-004-03  
Typical Capacitance  
C=f(VDS):VGS=0V,f=1MHz  
104  
103  
102  
101  
100  
Ciss  
Coss  
Crss  
10-1  
100  
101  
102  
103  
VDS [V]  
Typical Forward Characteristics of Reverse Diode  
IF=f(VSD):80 s pulse test,Tch=25 C  
1000  
100  
10  
1
0.1  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
1.75  
2.00  
VSD [V]  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
16 / 18  
H04-004-03  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=72V,VGS=10V,RG=10   
104  
103  
102  
101  
100  
tr  
td(off)  
td(on)  
tf  
10-1  
100  
101  
102  
103  
ID [A]  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=100A  
3500  
3000  
2500  
2000  
1500  
1000  
500  
IAS=40A  
IAS=60A  
IAS=100A  
0
0
25  
50  
75  
100  
125  
150  
starting Tch [C]  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
17 / 18  
H04-004-03  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25 C,Vcc=100V  
102  
101  
100  
10-1  
10-2  
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
tAV [sec]  
Transient Therm al Im pedance  
Zth(ch-c)=f(t):D=0  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
FujiElectricDeviceTechnologyCo.,Ltd.  
MS5F5911  
18 / 18  
H04-004-03  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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