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2SK690

型号:

2SK690

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

162 K

High Frequency FETs  
2SK690  
GaAs N-Channel MES FET  
For UHF medium output power amplification  
unit: mm  
1.5±0.1  
4.5±0.1  
1.6±0.2  
Features  
Large collector dissipation PC  
Mini-power type package, allowing downsizing of the sets and  
automatic insertion through the tape/magazine packing.  
08  
0.4±0.04  
.5±08  
1.5±1  
Absolute Maximum Ratings (Ta = 25°C
3.0±0.15  
2
Parameter  
Drain to Source voltage  
Gate to Source voltage  
Drain current  
Symbl  
VDS  
D  
R
Unit  
V
3
1
10  
6  
V
1: Gate  
2: Source  
3: Drain  
marking  
0.
Gate current  
IG  
1
1
mA  
W
EIAJ: SC-62  
Mini-Power Type Package (3-pin)  
*
Allowable power disipatin  
Channel temperatur
Storage temperatue  
D  
Tch  
150  
°C  
°C  
°C  
Marking Symbol: M  
Internal Connection  
Tstg  
5 to 150  
to +85  
Operatg amnt temperature Tor  
D
1k  
* PC oard: r foil of the drn portioshould have a ara of 1cm2 or  
more and the boad thikness sould be 1.7mm.  
G
Zener Di  
12V  
S
Zener Di  
8.2V  
Eleccteristics (Ta = 25°C)  
Pa
Drain current  
Symbol  
Conditions  
VDS = 5V, VGS = 0  
min  
typ  
max  
600  
2
Unit  
mA  
mA  
µA  
µA  
V
1, 2  
*
IDD  
IDSX  
IGSS  
150  
350  
Drain cut-off current  
Gate to Source leakage current  
Gate to Drain current  
Gate to Source cut-off voltage  
Forward transfer admittance  
Output power  
VDS = 10V, VGS = 6V  
VDS = 0, VGS = 6V  
VDS = 16V  
50  
IGDO  
VGSC  
| Yfs |  
Pout  
500  
6  
VDS = 5V, IDS = 1mA  
VDS = 5V, IDS = 50mA, f = 1kHz  
90  
20  
10  
150  
25  
ms  
dBm  
dB  
VDS = 6V, IDS = 100mA  
f = 940MHz, Pin = 10dBm  
Power gain  
PG  
15  
Additional efficiency  
ηadd  
51  
%
1 IDSS rank classification  
*
Rank  
P
Q
R
IDSS (mA)  
150 to 280  
220 to 380  
320 to 600  
2 Pulse measurement  
*
1
High Frequency FETs  
2SK690  
PD  
Ta  
ID VDS  
| Yfs |  
VGS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
180  
150  
120  
90  
300  
250  
200  
150  
100  
VDS=5V  
f=1kHz  
Ta=25˚C  
Ta=25˚C  
Copper foil of the drain portion  
should have a area of 1cm2  
or more and the board  
thickness should be 1.7mm.  
VGS=– 0.8V  
– 0.9V  
V  
– 1.1V  
– 1.3V  
60  
30  
0
0
40  
80  
120 160 200 240  
0
2
4
5
–1.5 –1.0 – 0.5  
0
0.5  
1.0  
(
)
( )  
Gate to source voltage VGS V  
Ambient temperature Ta ˚C  
n to surce voltage VDS  
Ciss, Coss, Crss  
VDS  
Pout  
Pin  
ηadd  
Pin  
2.4  
2.0  
1.6  
1.2  
0.8  
0.
40  
30  
60  
50  
40  
30  
20  
10  
0
VGS=–5V  
f=1M
Ta
VDS=6V  
DS=100mA  
f=940MHz  
in10Bm  
VDS=6V  
DS=100mA  
f=940MHz  
in=10dBm  
I
I
P
P
20  
is
1
ss  
Crss  
–10  
–20  
3
10  
0  
100  
–3–20 –10  
0
10  
20  
30  
–30 –20 –10  
0
10  
20  
30  
)  
V
(
)
(
)
Drain rce vtage V
Input voltage Pin dBm  
Input voltage Pin dBm  
VGS  
ηadd  
VGS  
30  
20  
60  
50  
40  
30  
20  
10  
0
VDS=6
DS=100mA  
f=940MHz  
in=10dBm  
VDS=6V  
I
I
DS=100mA  
f=94MHz  
=10dBm  
P
10  
0
–10  
–20  
–30  
0
–1  
–2  
–3  
–4  
0
– 0.5 –1.0 –1.5 –2.0 –2.5 –3.0  
( )  
V
( )  
V
Gate to source voltage VGS  
Gate to source voltage VGS  
2
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  
厂商 型号 描述 页数 下载

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

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PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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