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2SK2415-Z-E1

型号：

2SK2415-Z-E1

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

81 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2415, 2SK2415-Z  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2415 is N-Channel MOS Field Effect Transistor designed  
for high voltage switching applications.  
(in millimeters)  
2.3 ± 0.2  
0.5 ± 0.1  
6.5 ± 0.2  
5.0 ± 0.2  
4
FEATURES  
• Low On-Resistance  
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A)  
1
2 3  
RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)  
• Low Ciss  
Ciss = 570 pF TYP.  
1.3 MAX.  
QUALITY GRADE  
0.6 ± 0.1  
0.6 ± 0.1  
2.3 2.3  
Standard  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
Please refer to "Quality grade on NEC Semiconductor Devices" (Document  
number IEI-1209) published by NEC Corporation to know the  
specification of quality grade on the devices and its recommended applica-  
TO-251 (MP-3)  
tions.  
6.5 ± 0.2  
5.0 ± 0.2  
2.3 ± 0.2  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
0.5 ± 0.1  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
±8.0  
±32  
20  
V
V
4
A
1 2  
3
Drain Current (pulse)*  
A
0.9 0.8  
1.3 MAX.  
MAX. MAX.  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (Ta = 25 ˚C)  
Channel Temperature  
W
W
°C  
2.32.3  
0.8  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
PT2  
1.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150 °C  
Single Avalanche Current**  
Single Avalanche Energy**  
IAS  
8.0  
6.4  
A
TO-252 (MP-3Z)  
EAS  
mJ  
Drain  
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %  
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0  
Body  
Diode  
Gate  
Gate Protection  
Diode  
Source  
The information in this document is subject to change without notice.  
Document No. D13207EJ1V1DS00 (1st edition)  
(Previous No. TC-2496)  
Date Published December 1997 N CP(K)  
Printed in Japan  
©
1994  
2SK2415, 2SK2415-Z  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Drain to Source On-State Resistance  
Drain to Source On-State Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
MIN.  
TYP.  
0.07  
0.10  
1.6  
MAX.  
0.10  
0.15  
2.0  
UNIT  
TEST CONDITIONS  
VGS = 10 V, ID = 4.0 A  
VGS = 4 V, ID = 4.0 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 4.0 A  
VDS = 60 V, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
Ω
Ω
1.0  
5.0  
V
8.4  
S
µA  
10  
µA  
Gate to Source Leakage Current  
Input Capacitance  
IGSS  
±10  
Ciss  
570  
290  
75  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td(on)  
5
ID = 4.0 A  
Rise Time  
tr  
60  
VGS(on) = 10 V  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
75  
40  
VDD = 30 V  
RG = 10 Ω  
Total Gate Charge  
QG  
21  
2.0  
6.5  
1.0  
ID = 8.0 A  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
QGS  
QGD  
VF(S-D)  
VDD = 48 V  
VGS = 10 V  
IF = 8.0 A, VGS = 0  
Reverse Recovery Time  
Reverse Recovery Charge  
trr  
85  
ns  
nC  
IF = 8.0 A, VGS = 0  
Qrr  
200  
di/dt = 100 A/µs  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Switching Time  
D.U.T.  
D.U.T.  
L
V
GS  
R
L
RG  
= 25 Ω  
90 %  
GS (on)  
V
GS  
V
10 %  
Wave  
Form  
0
PG  
R
G
50 Ω  
V
DD  
PG.  
V
DD  
R = 10 Ω  
G
90 %  
VGS = 20 → 0 V  
I
D
90 %  
10 %  
I
D
10 %  
0
BVDSS  
V
0
GS  
I
D
I
AS  
Wave  
Form  
V
DS  
I
D
t
d (on)  
t
r
t
d (off)  
t
f
t
V
DD  
t
on  
t
off  
t = 1 µs  
Duty Cycle 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
= 2 mA  
RL  
I
G
V
DD  
PG.  
50 Ω  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2415, 2SK2415-Z  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
60  
40  
20  
24  
20  
16  
12  
8
4
0
20  
40  
60  
80 100 120 140 160  
20  
40  
60  
80 100 120 140 160  
0
T
c
- Case Temperature - °C  
Tc  
- Case Temperature - °C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
40  
Pulsed  
I
D (pulse)  
VGS = 10 V  
µ
32  
24  
16  
8
V
GS = 6 V  
µ
10  
1
I
D (DC)  
VGS = 4 V  
T
C
= 25 °C  
Single Pulse  
0.1  
0.1  
0
1
10  
100  
2
4
6
8
V
DS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
Pulsed  
1000  
100  
10  
VDS = 10 V  
Ta = - 25 °C  
25 °C  
125 °C  
1
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V  
3
2SK2415, 2SK2415-Z  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
Rth(ch-a) = 125 °C/W  
10  
1
Rth(ch-c) = 6.25 °C/W  
0.1  
0.01  
Single Pulse  
100 1000  
10µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
100  
10  
140  
120  
100  
V
DS = 10 V  
Pulsed  
Pulsed  
Ta = - 25 °C  
25 °C  
75 °C  
125 °C  
80  
60  
40  
20  
ID = 4.0 A  
1
0.1  
1
10  
0
5
10  
15  
20  
25  
I
D
- Drain Current - A  
V
GS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE  
RESITANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
160  
2.0  
1.5  
1.0  
V
DS = 10 V  
= 1 mA  
Pulsed  
I
D
140  
120  
100  
80  
V
GS = 4 V  
V
GS = 10 V  
60  
40  
20  
0
0.5  
0
1
10  
- Drain Current - A  
100  
- 50 - 25  
0
25  
50  
75 100 125 150  
I
D
Tch - Channel Temperature - °C  
4
2SK2415, 2SK2415-Z  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
180  
160  
100  
10  
1
Pulsed  
140  
120  
100  
80  
V
GS = 4 V  
10 V  
VGS = 10 V  
VGS = 0  
60  
40  
20  
I
D
= 4.0 A  
150  
0
0
1.0  
2.0  
- 50  
0
50  
100  
VSD - Source to Drain Voltage - V  
T
ch - Channel Temperature - °C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10 000  
1 000  
100  
1 000  
100  
10  
V
GS = 0  
f = 1 MHz  
t
d(off)  
Ciss  
t
f
Coss  
t
r
t
d(on)  
Crss  
V
V
DD = 30 V  
GS = 10 V  
RG  
= 10 Ω  
1.0  
10  
1
10  
DS - Drain to Source Voltage - V  
100  
0.1  
1.0  
10  
100  
V
I
D
- Drain Current - A  
REVERSE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT  
CHARACTERISTICS  
80  
16  
100  
I
D
= 8.0 A  
VDD = 48 V  
70  
60  
50  
40  
30  
14  
12  
10  
8
VGS  
VDS  
6
20  
10  
4
2
0
di/dt = 50 A/µs  
V
GS = 0  
10  
0.1  
1.0  
- Drain Current - A  
10  
0
10  
20  
- Gate Charge - nC  
30  
40  
I
D
Q
g
5
2SK2415, 2SK2415-Z  
SINGLE AVALANCHE ENERGY vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
100  
80  
V
DD = 30 V  
G
R
= 25 Ω  
GS = 20 V → 0  
AS 8.0 A  
V
I
I
AS = 8.0 A  
60  
40  
20  
0
1.0  
V
DD = 30 V  
V
GS = 20 V → 0  
R
G
= 25 Ω  
0.1  
10 µ  
100 µ  
1 m  
10 m  
25  
50  
75  
100  
125  
150  
Starting Tch - Starting Channel Temperature - °C  
L - Inductive Load - H  
6
2SK2415, 2SK2415-Z  
REFERENCE  
Document Name  
Document No.  
TEI-1202  
IEI-1209  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
IEI-1207  
IEI-1213  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the  
rated voltage may be applied to this device.  
7
2SK2415, 2SK2415-Z  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96.5  
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