找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK2552BCF-AT

型号:

2SK2552BCF-AT

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

5 页

PDF大小:

124 K

DATA SHEET  
JUNCTION FIELD EF2FESCTKTR2A5NS5IS2TOBR  
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR  
FOR IMPEDANCE CONVERTER OF ECM  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SK2552B is suitable for converter of ECM.  
+0.1  
+0.1  
0.3  
0.15  
–0  
–0.05  
General-purpose product.  
FEATURES  
3
Low noise:  
0 to 0.1  
108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k)  
Especially suitable for audio and telephone  
Small package:  
2
1
+0.1  
–0  
0.2  
0.6  
0.5  
0.5  
TYP.  
TYP. TYP.  
SC-75 (USM)  
1.0 TYP.  
1.6 0.1  
0.75 0.05  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
2SK2552B  
SC-75 (USM)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage (VGS = 1.0 V)  
Gate to Drain Voltage  
Drain Current  
VDSX  
VGDO  
ID  
20  
20  
V
V
2
10  
mA  
mA  
mW  
°C  
3
Gate Current  
IG  
10  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
100  
1
Tj  
125  
1: Source  
2: Drain  
3: Gate  
Tstg  
55 to +125  
°C  
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17282EJ1V0DS00 (1st edition)  
Date Published August 2004 NS CP(K)  
Printed in Japan  
2004  
2SK2552B  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Cut-off Current  
Gate Cut-off Voltage  
SYMBOL  
TEST CONDITIONS  
MIN.  
90  
TYP.  
MAX.  
UNIT  
IDSS  
VGS(off)  
| yfs1 |  
| yfs2 |  
Ciss  
VDS = 2.0 V, VGS = 0 V  
200  
0.37  
480  
430  
µ A  
V
VDS = 2.0 V, ID = 1.0 µA  
1.0  
Forward Transfer Admittance  
VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz  
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz  
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz  
VDD = 2.0 V, C = 5 pF, RL = 2.2 k,  
VIN = 10 mV, f = 1 kHz  
300  
750  
µS  
µS  
pF  
dB  
1300  
4.0  
Input Capacitance  
Voltage Gain  
GV  
1.0  
Noise Voltage  
NV  
VDD = 2.0 V, C = 5 pF, RL = 2.2 k,  
A-curve  
108.5  
dB  
IDSS CLASSIFICATION  
MARKING  
CE  
CF  
150 to 240  
CH  
CJ  
320 to 430  
IDSS (µA)  
90 to 180  
210 to 350  
VOLTAGE GAIN TEST CIRCUIT  
VDD  
R
L
Out  
C
NOISE VOLTAGE TEST CIRCUIT  
VDD  
RL  
JIS A  
NV (r.m.s)  
C
2
Data Sheet D17282EJ1V0DS  
2SK2552B  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF POWER DISSIPATION  
120  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
1000  
800  
600  
400  
200  
0
100  
80  
60  
40  
20  
0
VGS = 0.2 V  
0.1 V  
µ
0.2 V  
0.3 V  
0 V  
0.1 V  
0
25  
50  
75  
100  
125  
150  
175  
0
2
4
6
8
10  
TA - Ambient Temperature - °C  
VDS - Drain to Source Voltage - V  
GATE TO SOURCE CURRENT vs.  
GATE TO SOURCE VOLTAGE  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
40  
30  
VDS = 2.0 V  
µ
µ
20  
10  
0.8 0.6 0.4 0.2  
0
0.2 0.4 0.6 0.8  
10  
20  
30  
40  
-0.8 -0.6 -0.4 -0.2  
0
0.2 0.4 0.6 0.8  
1
VGS - Gate to Source Voltage - V  
VGS - Gate to Source Voltage - V  
INPUT CAPACITANCE vs.  
FORWARD TRANSFER ADMITTANCE AND GATE  
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE  
DRAIN CURRENT  
DRAIN TO SOURCE VOLTAGE  
10  
10  
VDS = 2.0 V  
VGS = 0 V  
f = 1.0 MHz  
| yfs |  
1
VGS(off)  
0.1  
1
10  
100  
1000  
1
10  
VDS - Drain to Source Voltage - V  
100  
IDSS - Zero Gate Voltage Drain Current - µA  
3
Data Sheet D17282EJ1V0DS  
2SK2552B  
VOLTAGE GAIN vs. DRAIN CURRENT  
NOISE VOLTAGE vs. DRAIN CURRENT  
3
2
103  
105  
107  
109  
111  
113  
115  
V
DD = 2.0 V  
C = 5 pF  
= 2.2 kΩ  
IN = 10 mV  
f = 1 kHz  
V
DD = 2.0 V  
C = 5 pF  
= 2.2 kΩ  
R
V
L
R
L
1
0
1  
2  
3  
4  
5  
10  
100  
IDSS - Drain Current - µA  
1000  
10  
100  
IDSS - Drain Current - µA  
1000  
4
Data Sheet D17282EJ1V0DS  
2SK2552B  
The information in this document is current as of August, 2004. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.176875s