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2SK2413-T-AZ

型号：

2SK2413-T-AZ

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

10 页

PDF大小：

304 K

下载PDF手册
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1010  
Rectronics Corporation  
Issued by: Renesas Electronics Corporation (m)  
Send any inquiries to http://www.renesas.c
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas  
Electronics products or the technology described in this document for any purpose relating to military applications or use by  
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and  
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited  
under any applicable domestic or foreign laws or regulations.  
6.  
7.  
Renesas Electronics has used reasonable care in preparing the information includs document, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assuy whatsoever for any damages  
incurred by you resulting from errors in or omissions from the information
Renesas Electronics products are classified according to the following tard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electroduct’s quality grade, as  
indicated below. You must check the quality grade of each Renesing it in a particular  
application. You may not use any Renesas Electronics product as “Specific” without the prior  
written consent of Renesas Electronics. Further, you may nroduct for any application for  
which it is not intended without the prior written consent s Electronics shall not be in any way  
liable for any damages or losses incurred by you or thif any Renesas Electronics product for an  
application categorized as “Specific” or for which te you have failed to obtain the prior written  
consent of Renesas Electronics. The quality gradroduct is “Standard” unless otherwise  
expressly specified in a Renesas Electronics d
“Standard”:  
Computers; office equipent; test and measurement equipment; audio and visual  
equipment; home elels; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation eqhips, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aee repeaters; nuclear reactor control systems; medical equipment or  
systems fe support devices or systems), surgical implantations, or healthcare  
interany other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Rescribed in this document within the range specified by Renesas Electronics,  
especially with respect toperating supply voltage range, movement power voltage range, heat radiation  
characteristics, installation characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out of the use Electronics products beyond such specified ranges.  
Although Renesas Electronics endors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a  
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire  
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because  
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system  
manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental  
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable  
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Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with  
applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas  
Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this  
document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2413  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2413 is N-Channel MOS Field Effect Transistor de-  
signed for high speed switching applications.  
(in millimeter)  
FEATURES  
4.5 ±±.ꢀ  
• Low On-Resistance  
±.ꢀ  
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)  
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)  
• Low Ciss  
Ciss = 860 pF TYP.  
• Built-in G-S Gate Protection Diodes  
• High Avalanche Capability Ratings  
ꢀ 3  
QUALITY GRADE  
Standard  
1.4 ±±.ꢀ  
±.5 ±±.1  
1.4 ±±.ꢀ  
±.5 ±±.1  
Pleasereferto"QualitygradeonNECSemt  
number IEI-1209) published by the  
specification of quality grade on ended  
±.5 ±±.1  
applications.  
1. Gate  
ꢀ. Drain  
3. Source  
ABSOLUTE MAXIM5 ˚C)  
Drain to Source V
Gate to Source Vo
Drain Current (DC)  
60  
V
V
MP-10 (ISOLATED TO-220)  
±20  
±10  
±40  
1.8  
D(DC)  
ID(pulse)  
A
Drain  
Drain Current (pulse)*  
A
Total Power Dissipation (TA 5 ˚C) PT  
W
˚C  
Channel Temperature  
Tch  
Tstg  
IAS  
150  
Body  
Diode  
Gate  
Storage Temperature  
–55 to +150 ˚C  
Single Avalanche Current**  
Single Avalanche Energy**  
10  
10  
A
Gate Protection  
EAS  
mJ  
Diode  
Source  
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %  
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0  
The information in this document is subject to change without notice.  
Document No. TC-2494  
(O. D. No. TC-8032)  
Date Published November 1994  
Printed in Japan  
P
1994  
©
2SK2413  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
CHARACTERISTIC  
Drain to Source On-Resistance  
Drain to Source On-Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
SYMBOL  
RDS(on)1  
RDS(on)2  
VGS(off)  
| yfs |  
IDSS  
MIN.  
TYP.  
50  
MAX.  
70  
UNIT  
mΩ  
mΩ  
V
TEST CONDITIONS  
VGS = 10 V, ID = 5.0 A  
VGS = 4 V, ID = 5.0 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 5.0 A  
VDS = 60 V, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
70  
95  
1.0  
7.0  
1.6  
12  
2.0  
S
µA  
µA  
pF  
pF  
pF  
ns  
±10  
±10  
IGSS  
Ciss  
860  
440  
110  
15  
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td(on)  
tr  
ID = 5.0 A  
Rise Time  
90  
n
S(on) = 10 V  
Turn-Off Delay Time  
td(off)  
tf  
75  
30 V  
Fall Time  
30  
Total Gate Charge  
QG  
24  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
3.0  
V  
QGD  
VF(S-D)  
trr  
= 10 V  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
IF = 10 A, VGS = 0  
IF = 10 A, VGS = 0  
di/dt = 100 A/µs  
Qrr  
nC  
Test Circuit 1 Avalanche Capability  
ing Time  
D.U.T.  
D.U.T.  
V
GS  
R
L
90 %  
R
G
= 25 Ω  
V
GS  
Wave  
Form  
V
GS (on)  
10 %  
0
.  
R
G
PG  
R = 10 Ω  
G
50 Ω  
V
DD  
90 %  
I
D
V
GS = 20 → 0 V  
90 %  
10 %  
I
D
I
D
10 %  
0
V
0
GS  
I
AS  
Wave  
Form  
t
d (on)  
t
r
t
d (off)  
t
f
I
D
t
VDD  
t
on  
t
off  
µ
t = 1  
s
Duty Cycle ≤ 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
= 2 mA  
R
L
I
G
PG.  
50 Ω  
V
DD  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2413  
Radial Tape Specification  
Dimension (unit: mm)  
Item  
P2  
P
T
∆P  
∆h  
∆h  
Component Body Length along Tape  
Component Body Height  
Component Body Width  
A1  
A
T
8.0 ± 0.2  
13.0 ± 0.2  
4.5 ± 0.2  
0.5 ± 0.1  
2.5 MIN.  
12.7 ± 1.0  
12.7 ± 0.3  
6.35 ± 0.5  
A1  
Component Lead Width Dimension  
Lead Wire Enclosure  
d
I1  
Component Center Pitch  
Feedhole Pitch  
P
P0  
P2  
Feedhole Center to Center Lead  
F1 F2  
P0  
d
+0.4  
2.5  
Component Lead Pitch  
F1, F2  
–0.1  
D0  
Deflection Front or
Deflection Left o
∆h  
∆P  
±1.0  
±1.3  
+1.0  
18.0  
Carrier Str
W
–0.5  
Adh
W0  
W1  
W2  
H0  
H1  
H
5.0 MIN.  
9.0 ± 0.5  
0.7 MIN.  
16.0 ± 0.5  
32.2 MAX.  
20.0 MAX.  
4.0 ± 0.2  
0.7 ± 0.2  
e  
of Component  
ottom of Component  
hole Diameter  
ll Taped Package Thickness  
D0  
t
3
2SK2413  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
100  
80  
2.0  
1.6  
1.2  
60  
40  
0.8  
0.4  
0
20  
0
20  
40  
60  
80 100 120 140 160  
20  
60  
80 100 120 140 160  
Ta - Ambient Temperature - ˚C  
nt Temperature - ˚C  
vs.  
RCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
1
20  
Pulsed  
ID(pulse)  
V  
VGS = 6 V  
µ
µ
ID (DC)  
VGS = 4 V  
10  
0
TA = 25 ˚C  
Single Pulse  
0.1  
1
2
4
6
8
10  
VDS - Drain to
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
1000  
100  
Pulsed  
VDS = 10 V  
TA = –25 ˚C  
25 ˚C  
10  
1
75 ˚C  
125 ˚C  
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V  
4
2SK2413  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
Rth (ch-a) = 69.4 ˚C/W  
10  
1
0.1  
Single Pulse  
100 1000  
0.01  
µ
µ
10  
100  
1 m  
10 m  
100 m  
10  
PW - Pulse Widt
E ON-STATE RESISTANCE vs.  
CE VOLTAGE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
0  
100  
10  
1
Pulsed  
VDS = 10 V  
Pulsed  
TA = –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
60  
ID = 5 A  
40  
20  
0
0
10  
20  
100  
VGS - Gate to Source Voltage - V  
ID
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
160  
140  
120  
100  
80  
2.0  
1.5  
1.0  
VDS = 10 V  
ID = 1 mA  
Pulsed  
VGS = 4 V  
60  
VGS = 10 V  
0.5  
0
40  
20  
0
–50  
0
50  
100  
150  
1
10  
ID - Drain Current - A  
100  
Tch - Channel Temperature - ˚C  
5
2SK2413  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
100  
10  
Pulsed  
120  
10 V  
VGS = 4 V  
80  
40  
0
VGS = 0  
VGS = 10 V  
1
ID = 5 A  
0.1  
0
1.0  
2.0  
–50  
0
50  
100  
150  
Tch - Channel Temperature - ˚C  
VSD - Sourto Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
TICS  
10000  
1000  
VGS = 0  
f = 1 MHz  
tr  
Ciss  
Coss  
)  
1000  
100  
10  
f  
Crss  
td (on)  
VDD = 30 V  
VGS = 10 V  
RG = 10 Ω  
1.0  
0.1  
1.0  
10  
100  
1
10  
VDS - Drain to
ID - Drain Current - A  
REVERSE RECO
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
80  
70  
16  
14  
100  
ID = 10 A  
VDD = 48 V  
60  
50  
12  
10  
VGS  
VDS  
40  
30  
20  
8
6
4
10  
0
2
0
di/dt = 50 A/µs  
VGS = 0  
10  
0.1  
0
10  
20  
30  
40  
1.0  
10  
100  
Qg - Gate Charge - nC  
ID - Drain Current - A  
6
2SK2413  
SINGLE AVALANCHE ENERGY vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
100  
80  
VDD = 30 V  
RG = 25 Ω  
VGS = 20 V → 0  
IAS ≤ 10 A  
IAS = 10 A  
60  
40  
1.0  
20  
0
VDD = 30 V  
VGS = 20 V → 0  
RG = 25 Ω  
µ
µ
10  
100  
1 m  
10 m  
25  
50  
75  
100  
125  
150  
L - Inductive Load - H  
StaTch - Starting Channel Temperature - ˚C  
REFERENCE  
Document Name  
Document No.  
TEI-1202  
IEI-1209  
NEC semiconductor device reliability/quality control syste
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology man
Semiconductor device package manual.  
IEI-1207  
IEI-1213  
Guide to quality assurance for semicond
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and apply.  
Application circuits using Po
Safe operating area of P
The diode cond source of the transistor serves as a protector against ESD. When  
this device is actuaal protection circuit is externally required if a voltage exceeding the  
rated voltage may be device.  
7
2SK2413  
[MEMO]  
No part of this document may be copied oby any means without the prior written  
consent of NEC Corporation. NEC Corpoility for any errors which may appear in this  
document.  
NEC Corporation does not assument of patents, copyrights or other intellectual  
property rights of third parties evice described herein or any other liability arising  
from use of such device. implied or otherwise, is granted under any patents,  
copyrights or other intelleC Corporation or others.  
The devices listed in thfor use in aerospace equipment, submarine cables, nuclear  
reactor control systems a. If customers intend to use NEC devices for above applications  
or they intend to use "StandaNEC devices for applications not intended by NEC, please contact  
our sales people in advance.  
Application examples recommendNEC Corporation  
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,  
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.  
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime  
systems, etc.  
M4 92.6  
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