找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3503-AT

型号:

2SK3503-AT

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

5 页

PDF大小:

114 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3503  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR HIGH SPEED SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SK3503 is an N-channel vertical MOS FET. Because it can be  
driven by a voltage as low as 1.5 V and it is not necessary to consider  
a drive current, this FET is ideal as an actuator for low-current portable  
systems such as headphone stereos and video cameras.  
+0.1  
+0.1  
0.3  
–0  
0.15  
–0.05  
3
FEATURES  
0 to 0.1  
Automatic mounting supported  
2
1
Gate can be driven by a 1.5 V power source  
Because of its high input impedance, there’s no need to  
consider a drive current  
Since bias resistance can be omitted, the number of  
components required can be reduced  
+0.1  
–0  
0.2  
0.5  
0.6  
0.5  
0.75 0.05  
1.0  
1.6 0.1  
1: Source  
2: Gate  
3: Drain  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
2SK3503  
SC-75 (USM)  
Marking: E1  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (Tc = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
16  
±7.0  
±0.1  
±0.4  
200  
V
V
A
EQUIVALENT CIRCUIT  
Drain  
A
Total Power Dissipation (TC = 25°C) Note2  
Channel Temperature  
mW  
°C  
°C  
Body  
Diode  
Gate  
Tch  
Tstg  
150  
–55 to +150  
Storage Temperature  
Gate  
Protection  
Diode  
Source  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on ceramic substrate of 3.0 cm2 × 0.64 mm  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D15395EJ2V0DS00 (2nd edition)  
Date Published November 2004 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2001  
2SK3503  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN. TYP. MAX. UNIT  
IDSS  
VDS = 16 V, VGS = 0 V  
1.0  
3.0  
1.1  
µA  
µA  
V
IGSS  
VGS = ±7.0 V, VDS = 0 V  
VDS = 3.0 V, ID = 10 µA  
VDS = 3.0 V, ID = 10 mA  
VGS = 1.5 V, ID = 1.0 mA  
VGS = 2.5 V, ID = 10 mA  
VGS = 4.0 V, ID = 10 mA  
VGS = 0 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
0.5  
20  
0.8  
Forward Transfer Admittance Note  
Drain to Source On-state Resistance Note  
mS  
20  
7.0  
5.0  
10  
50  
15  
12  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
VDS = 3.0 V  
13  
Crss  
f = 1 MHz  
3.0  
15  
td(on)  
VDD = 3.0 V, ID = 10 mA  
VGS = 3.0 V  
tr  
70  
Turn-off Delay Time  
Fall Time  
td(off)  
RG = 10  
100  
110  
tf  
Note Pulsed  
TEST CIRCUIT SWITCHING TIME  
D.U.T.  
V
GS  
R
L
90%  
V
GS  
V
GS  
10%  
Wave Form  
0
R
G
PG.  
V
DD  
90%  
ID  
90%  
10%  
I
D
V
0
GS  
10%  
I
D
0
Wave Form  
t
d(on)  
t
r
t
d(off)  
t
f
τ
t
on  
t
off  
µ
τ = 1  
s
Duty Cycle 1%  
2
Data Sheet D15395EJ2V0DS  
2SK3503  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
240  
50  
40  
30  
20  
10  
Pulsed  
2.0 V  
Mounted on ceramic substrate  
of 3.0 cm2 x 0.64 mm  
200  
160  
120  
80  
1.8 V  
1.6 V  
1.4 V  
40  
VGS = 1.2 V  
0
30  
60  
90  
120 150 180 210  
0
1
2
3
4
5
TA  
- Ambient Temperature - ˚C  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
200  
100  
50  
500  
VDS = 3.0 V  
TA  
= –25˚C  
Pulsed  
Pulsed  
200  
100  
T
A
= –25˚C  
25˚C  
75˚C  
V
GS = 1.5 V  
20  
10  
5
50  
20  
10  
2.5 V  
4.0 V  
0.5  
1
2
5
10 20  
50 100 200 500  
5
10  
20  
50  
100  
200  
ID  
- Drain Current - mA  
ID - Drain Current - mA  
TA = 75˚C  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
200  
100  
50  
200  
100  
50  
T
A
= 25˚C  
T = 75˚C  
A
Pulsed  
Pulsed  
V
GS = 1.5 V  
V
GS = 1.5 V  
20  
10  
5
20  
10  
5
2.5 V  
4.0 V  
2.5 V  
4.0 V  
0.5  
1
2
5
10 20  
50 100 200 500  
0.5  
1
2
5
10 20  
50 100 200 500  
ID  
- Drain Current - mA  
ID - Drain Current - mA  
3
Data Sheet D15395EJ2V0DS  
2SK3503  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
30  
20  
10  
30  
20  
10  
T
A
= – 25˚C  
T
A
= 25˚C  
Pulsed  
Pulsed  
I
D
= 10 mA  
I
D
= 10 mA  
1 mA  
1 mA  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
VGS - Gate to Source Voltage - V  
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
SOURCE TO DRAIN DIODE FORWARD  
VOLTAGE  
30  
20  
10  
200  
100  
50  
T
A
= 75˚C  
V
GS = 0 V  
Pulsed  
Pulsed  
I
D
= 10 mA  
1 mA  
20  
10  
5
2
1
0
1
2
3
4
5
6
7
0
0.2  
0.4  
0.6  
0.8  
1.0  
VGS - Gate to Source Voltage - V  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs.  
DRAIN TO SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
50  
500  
V
V
R
DD = 3.0 V  
GS = 3.0 V  
V
GS = 0 V  
f = 1 MHz  
G
= 10  
tr  
20  
10  
5
200  
100  
50  
C
iss  
C
oss  
tf  
2
1
t
d(on)  
d(off)  
20  
10  
C
rss  
t
0.5  
1
2
5
10  
20  
50  
20  
50  
100  
200  
500  
VDS - Drain to Source Voltage - V  
ID  
- Drain Current - mA  
4
Data Sheet D15395EJ2V0DS  
2SK3503  
The information in this document is current as of November, 2004. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.198246s