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2SK3408-A

型号:

2SK3408-A

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

8 页

PDF大小:

62 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3408  
N-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The 2SK3408 is a switching device which can be driven  
directly by a 4-V power source.  
+0.1  
0.05  
0.4  
+0.1  
0.06  
0.16  
The 2SK3408 features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of dynamic clamp of relay and so on.  
3
0 to 0.1  
FEATURES  
1
2
Can be driven by a 4-V power source  
Low on-state resistance  
0.65  
0.95 0.95  
1.9  
RDS(on)1 = 195 mMAX. (VGS = 10 V, ID = 0.5 A)  
RDS(on)2 = 250 mMAX. (VGS = 4.5 V, ID = 0.5 A)  
RDS(on)3 = 260 mMAX. (VGS = 4.0 V, ID = 0.5 A)  
Built-in G-S protection diode against ESD.  
0.9 to 1.1  
2.9 ±0.2  
1
: Gate  
2 : Source  
3 : Drain  
ORDERING INFORMATION  
PART NUMBER  
2SK3408  
PACKAGE  
EQUIVALENT CIRCUIT  
SC-96 Mini Mold (Thin Type)  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Body  
Diode  
Drain to Source Voltage (VGS = 0 V)  
Drain to Gate Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
VDSS  
VDGS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
43±5  
43±5  
±20  
V
V
Gate  
V
Gate  
Protection  
Diode  
Drain Current (DC) (T  
C
= 25°C)  
±1.0  
±4.0  
0.2  
A
Source  
Drain Current (pulse) Note1  
Total Power Dissipation (T  
Total Power Dissipation (T  
Channel Temperature  
A
Marking: XF  
C
A
= 25°C)  
= 25°C) Note2  
W
W
°C  
PT2  
1.25  
150  
Tch  
Storage Temperature  
Tstg  
–55 to +150 °C  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on FR-4 Board, t 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D15016EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
2000  
©
2SK3408  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
IDSS  
TEST CONDITIONS  
VDS = 30.4 V, VGS = 0 V  
MIN. TYP. MAX. UNIT  
10  
±10  
2.5  
µA  
µA  
V
IGSS  
VGS = ±16 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 0.5 A  
VGS = 10 V, ID = 0.5 A  
VGS = 4.5 V, ID = 0.5 A  
VGS = 4.0 V, ID = 0.5 A  
VDS = 10 V  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
RDS(on)3  
Ciss  
1.5  
1
2.0  
2.0  
155  
185  
195  
230  
50  
Forward Transfer Admittance  
Drain to Source On-state Resistance  
S
195  
250  
260  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
Coss  
VGS = 0 V  
Crss  
f = 1 MHz  
30  
td(on)  
tr  
td(off)  
tf  
VDD = 20 V  
18  
ID = 0.5 A  
14  
ns  
Turn-off Delay Time  
Fall Time  
VGS(on) = 10 V  
115  
38  
ns  
RG = 10 Ω  
ns  
Total Gate Charge  
QG  
VDS = 30.4 V  
4.0  
1.0  
1.0  
0.81  
25  
nC  
nC  
nC  
V
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
ID = 1.0 A  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
IF = 1.0 A, VGS = 0 V  
IF = 1.0 A, VGS = 0 V  
di/dt = 100 A/µs  
ns  
Qrr  
16  
nC  
TEST CIRCUIT 1 SWITCHING TIME  
TEST CIRCUIT 2 GATE CHARGE  
D.U.T.  
V
GS  
RL  
D.U.T.  
90%  
V
GS  
V
GS(on)  
10%  
Wave Form  
I
G
= 2 mA  
0
RG  
RL  
PG.  
V
DD  
90%  
I
D
90%  
10%  
tf  
PG.  
V
DD  
50  
I
D
V
0
GS  
10%  
I
D
0
Wave Form  
tr  
td(on)  
td(off)  
τ
ton  
toff  
τ = 1µs  
Duty Cycle 1%  
2
Data Sheet D15016EJ3V0DS  
2SK3408  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
FORWARD BIAS SAFE OPERATING AREA  
100  
80  
10  
1
ID (pulse)  
ID (DC)  
60  
40  
0.1  
0.01  
20  
0
Single Pulse  
Mounted on 250 mm2 x 35  
Connected to Drain Electrode in  
µ
m Copper Pad  
50 mm x 50 mm x 1.6 mm FR-4 Board  
0
30  
60  
90  
120  
150  
0.1  
1
10  
100  
T
A - Ambient Temperature - ˚C  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
4
10  
1
V
GS =10 V  
4.5 V  
3
2
4.0 V  
0.1  
0.01  
TA  
= 125˚C  
75˚C  
25˚C  
25˚C  
0.001  
0.0001  
1
0
V
DS = 10 V  
0.00001  
2
0
1
3
4
1
0
0.2  
0.4  
0.6  
0.8  
VGS - Gate to Sorce Voltage - V  
V
DS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE Vs.  
DRAIN CURRENT  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
10  
1
2.5  
V
DS = 10 V  
= 1 mA  
I
D
2
1.5  
1
T
A
= 25˚C  
25˚C  
75˚C  
125˚C  
0.1  
VDS = 10 V  
0.01  
0.01  
0.1  
10  
1
150  
50  
0
50  
100  
ID - Drain Current - A  
T
ch - Channel Temperature - ˚C  
3
Data Sheet D15016EJ3V0DS  
2SK3408  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
400  
400  
V
GS = 10 V  
VGS = 4.5 V  
T
A
= 125˚C  
300  
200  
300  
200  
T
A
= 125˚C  
75˚C  
25˚C  
75˚C  
25˚C  
25˚C  
25˚C  
100  
0
100  
0
1
10  
0.01  
0.1  
1
10  
0.01  
0.1  
ID - Drain Current - A  
I
D
- Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
400  
400  
V
GS = 4.0 V  
ID = 0.5 A  
T
A
= 125˚C  
V
GS = 4.0 V  
300  
200  
100  
300  
200  
4.5 V  
10 V  
75˚C  
25˚C  
25˚C  
100  
0
0
50  
1
10  
0.01  
0.1  
0
50  
100  
150  
I
D
- Drain Current - A  
T
ch - Channel Temperature -˚C  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
1000  
100  
500  
f = 1MHz  
V
GS = 0V  
Ciss  
400  
300  
200  
100  
0
C
oss  
Crss  
10  
1
ID = 1.0 A  
0.1  
1
100  
10  
0
10  
GS - Gate to Source Voltage - V  
5
15  
20  
V
DS - Drain to Source Voltage - V  
V
4
Data Sheet D15016EJ3V0DS  
2SK3408  
SWITCHING CHARACTERISTICS  
SOURCE TO DRAIN DIODE FORWARD VOLTAGE  
10  
1000  
100  
10  
td(off)  
1
0.1  
tr  
tf  
td(on)  
V
DD = 20V  
on) = 10V  
= 10  
V
GS  
(
Pulsed  
R
G
V
GS = 0 V  
1
0.01  
0.4  
1.0  
0.6  
0.8  
1.2  
1
0.1  
10  
I
D
- Drain Current - A  
V
F(S-D) - Diode Forward Voltage - V  
DYNAMIC INPUT CHARACTERISTICS  
= 1.0 A  
12  
I
D
10  
8
V
DD = 32 V  
20 V  
8 V  
6
4
2
0
0
1
2
3
4
5
Qg - Gate Charge - nC  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
Without Board  
1000  
100  
Single Pulse  
2
µ
Mounted on 250 mm x 35  
m
Copper Pad  
Connected to Drain Electrode  
in 2500 mm2 x 1.6 mm FR-4 Board  
10  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
PW - Pulse Width - S  
5
Data Sheet D15016EJ3V0DS  
2SK3408  
DYNAMIC CLAMP APPLICATION  
Relay  
Load  
Rin  
Microcomputer  
RGS  
Remarks 1. Input resistance is necessary to Gate terminal.  
(Range ; 1kto 10k, Recommend ; 3k)  
2. Pull down resistance is necessary between Gate to Source.  
(Several 10k)  
6
Data Sheet D15016EJ3V0DS  
2SK3408  
[MEMO]  
7
Data Sheet D15016EJ3V0DS  
2SK3408  
The information in this document is current as of April, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
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