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2SK3326B-S17-AY

型号：

2SK3326B-S17-AY

品牌：

NEC[ NEC ]

页数：

7 页

PDF大小：

194 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3326B  
SWITCHING  
N-CHANNEL POWER MOSFET  
DESCRIPTION  
The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics,  
and designed for high voltage applications such as switching power supply, AC adapter.  
FEATURES  
(Isolated TO-220)  
• Low gate charge  
QG = 20 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)  
• Gate voltage rating : ±30 V  
• Low on-state resistance  
RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)  
• Avalanche capability ratings  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
2SK3326B-S17-AY Note  
Tube 50 p/tube  
Isolated TO-220 (MP-45F) typ. 2.2 g  
Note Pb-free (This product does not contain Pb in external electrode.)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
500  
±30  
V
V
±10  
A
±40  
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
2.0  
W
W
°C  
°C  
A
PT2  
40  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
10  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
10.7  
mJ  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18430EJ2V0DS00 (2nd edition)  
Date Published April 2007 NS CP (K)  
Printed in Japan  
2006  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
2SK3326B  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
Characteristics  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
Gate Cut-off Voltage  
Symbol  
IDSS  
IGSS  
VGS(off)  
| yfs |  
RDS(on)  
Ciss  
Test Conditions  
VDS = 500 V, VGS = 0 V  
MIN. TYP. MAX. Unit  
100  
±100  
3.5  
μA  
nA  
V
VGS = ±30 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 5.0 A  
VGS = 10 V, ID = 5.0 A  
VDS = 10 V  
2.5  
2.0  
Forward Transfer Admittance Note  
Drain to Source On-state Resistance Note  
Input Capacitance  
3.9  
0.76  
1270  
210  
6
S
0.85  
Ω
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Output Capacitance  
Coss  
Crss  
td(on)  
tr  
VGS = 0 V  
Reverse Transfer Capacitance  
Turn-on Delay Time  
f = 1 MHz  
VDD = 150 V, ID = 5.0 A  
VGS = 10 V  
19  
Rise Time  
6.5  
31  
Turn-off Delay Time  
td(off)  
tf  
RG = 10 Ω  
Fall Time  
RL = 60 Ω  
5
Total Gate Charge  
QG  
VDD = 400 V  
20  
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage Note  
Reverse Recovery Time  
Reverse Recovery Charge  
Note Pulsed  
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
9.5  
5.5  
0.98  
440  
2000  
ID = 10 A  
IF = 10 A, VGS = 0 V  
IF = 10 A, VGS = 0 V  
di/dt = 50 A/μs  
1.5  
ns  
nC  
Qrr  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
V
GS  
R
L
R
G
= 25 Ω  
90%  
V
GS  
Wave Form  
VGS  
10%  
90%  
0
R
G
PG.  
GS = 20 → 0 V  
PG.  
50 Ω  
V
DD  
V
DD  
V
DS  
90%  
V
DS  
V
0
GS  
BVDSS  
10% 10%  
V
DS  
Wave Form  
0
I
AS  
V
DS  
τ
I
D
td(on)  
tr  
td(off)  
tf  
V
DD  
ton  
toff  
τ = 1 μs  
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
R
L
PG.  
50 Ω  
V
DD  
2
Data Sheet D18430EJ2V0DS  
2SK3326B  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
45  
40  
35  
30  
25  
20  
15  
10  
5
0
0
25  
50  
75 100 125 150 175  
0
25  
50  
75  
100  
125  
150  
Tch - Channel Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
I
D(pulse)  
I
D(DC)  
1
RDS(on) Limited  
(VGS = 10 V)  
0.1  
0.01  
T
C
= 25°C  
Single Pulse  
1
10  
100  
1000  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
R
R
th(ch-A) = 62.5 °C/W.  
th(ch-C) = 3.125 °C/W.  
1
0.1  
Single pulse  
100 1000  
0.01  
100 μ  
1 m  
10 m  
100 m  
1
10  
PW - Pulse Width – s  
3
Data Sheet D18430EJ2V0DS  
2SK3326B  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD TRANSFER CHARACTERISTICS  
100  
20  
18  
16  
14  
12  
10  
8
10  
1
V
GS = 20 V  
T = −55°C  
A
−25°C  
25°C  
75°C  
125°C  
150°C  
10 V  
0.1  
6
0.01  
0.001  
4
V
DS = 10 V  
Pulsed  
2
Pulsed  
0
0
2
4
6
8
10  
12  
14  
0
5
10  
15  
20  
25  
VGS - Gate to Source Voltage - V  
VDS - Drain to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
5
10  
1
−25°C  
25°C  
A
T = −55°C  
75°C  
4
3
2
1
0
125°C  
150°C  
0.1  
V
DS = 10 V  
V
DS = 10 V  
= 1 mA  
Pulsed  
I
D
0.01  
-50  
0
50  
100  
150  
0.01  
0.1  
1
10  
100  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
1.4  
1.2  
1
2
1.8  
1.6  
1.4  
1.2  
1
Pulsed  
I
D
= 10 A  
2.0 A  
0.8  
0.6  
0.4  
0.2  
0
5.0 A  
V
GS = 10 V  
20 V  
0.8  
0.6  
0.4  
0.2  
0
Pulsed  
0.1  
1
10  
100  
0
5
10  
15  
20  
ID - Drain Current - A  
VGS – Gate to Source Voltage - V  
4
Data Sheet D18430EJ2V0DS  
2SK3326B  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
<R>  
100  
10  
1.6  
1.4  
ID = 10 A  
1.2  
1
VGS = 10 V  
0.8  
1
5.0 A  
0.6  
0.4  
0 V  
0.1  
0.01  
VGS = 10 V  
Puls ed  
0.2  
0
-50  
Pulsed  
1.5  
0
50  
100  
150  
0
0.5  
1
Tch - Channel Temperature - °C  
VF(S-D) – Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10000  
1000  
100  
10  
1000  
100  
10  
V
V
DD = 150 V  
GS = 10 V  
C
iss  
t
f
R = 10 Ω  
G
C
oss  
t
d(off)  
t
d(on)  
t
r
1
C
rss  
V
GS = 0 V  
f = 1 MHz  
1
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
1000  
ID - Drain Current - A  
VDS - Drain to Source Voltage – V  
REVWESE RECOVERY TIME vs.  
DRAIN CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
10  
500  
400  
300  
200  
100  
0
10  
9
8
7
6
5
4
3
2
1
0
V
DD = 400 V  
250 V  
V
GS  
100 V  
V
DS  
di/dt = 50 A/μs  
GS = 0 V  
I
D
= 10 A  
20  
V
0
5
10  
15  
25  
0.1  
1
10  
100  
QG – Gate Chage - nC  
ID - Drain Current - A  
5
Data Sheet D18430EJ2V0DS  
2SK3326B  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
1
120  
100  
80  
60  
40  
20  
0
V
R
V
I
DD = 150 V  
= 25 Ω  
GS = 20 → 0 V  
AS ≤ 10 A  
G
I
AS = 10 A  
EAS = 10.7 mJ  
V
V
DD = 150 V  
GS = 20 → 0 V  
R
G
= 25 Ω  
Starting Tch = 25°C  
0.1  
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
Starting Tch - Starting Channel Temperature - °C  
L - Inductive Load - H  
EQUIVALENT CIRCUIT  
PACKAGE DRAWING (Unit: mm)  
Isolated TO-220 (MP-45F)  
Drain (D)  
4.7 0.2  
10.0 0.3  
3.2 0.2  
2.54 0.2  
Body  
Diode  
Gate (G)  
Source (S)  
1.47 MAX  
0.8 0.2  
2.76 0.2  
0.50 0.1  
2.54 TYP.  
2.54 TYP.  
1. Gate  
2. Drain  
3. Source  
1
2 3  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade  
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly  
dissipate it once, when it has occurred.  
6
Data Sheet D18430EJ2V0DS  
2SK3326B  
•
The information in this document is current as of April, 2007. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or  
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all  
products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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