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2SK2723(0)-AZ

型号:

2SK2723(0)-AZ

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

10 页

PDF大小:

278 K

To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1010  
Rectronics Corporation  
Issued by: Renesas Electronics Corporation (m)  
Send any inquiries to http://www.renesas.c
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
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6.  
7.  
Renesas Electronics has used reasonable care in preparing the information includs document, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assuy whatsoever for any damages  
incurred by you resulting from errors in or omissions from the information
Renesas Electronics products are classified according to the following tard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electroduct’s quality grade, as  
indicated below. You must check the quality grade of each Renesing it in a particular  
application. You may not use any Renesas Electronics product as “Specific” without the prior  
written consent of Renesas Electronics. Further, you may nroduct for any application for  
which it is not intended without the prior written consent s Electronics shall not be in any way  
liable for any damages or losses incurred by you or thif any Renesas Electronics product for an  
application categorized as “Specific” or for which te you have failed to obtain the prior written  
consent of Renesas Electronics. The quality gradroduct is “Standard” unless otherwise  
expressly specified in a Renesas Electronics d
“Standard”:  
Computers; office equipent; test and measurement equipment; audio and visual  
equipment; home elels; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation eqhips, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aee repeaters; nuclear reactor control systems; medical equipment or  
systems fe support devices or systems), surgical implantations, or healthcare  
interany other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Rescribed in this document within the range specified by Renesas Electronics,  
especially with respect toperating supply voltage range, movement power voltage range, heat radiation  
characteristics, installation characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out of the use Electronics products beyond such specified ranges.  
Although Renesas Electronics endors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a  
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire  
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because  
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system  
manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental  
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable  
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS  
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with  
applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas  
Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this  
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
DATA SHEET  
MOS Field Effect Power Transistors  
2SK2723  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
PACKAGE DIMENSIONS  
(in millimeter)  
DESCRIPTION  
4.5 ± 0.2  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching spplications.  
10.0 ± 0.3  
3.2 ± 0.2  
2.7 ± 0.2  
FEATURES  
Low On-Resistance  
RDS (on) 1 = 40mMax. (VGS = 10 V, ID = 13 A)  
RDS (on) 2 = 60mMax. (VGS = 4 V, ID = 13 A)  
Low Ciss  
Ciss = 830 pF Typ.  
Built-in G-S Protection Diode  
Isolated TO-220 Package  
1.3 ± 0.2  
1.5 ± 0.2  
2.54  
2.5 ± 0.1  
0.65 ± 0.1  
2.54  
1.Gate  
2.Drain  
3.Source  
1
2 3  
MP-45F (ISOLATED TO-220)  
ABSOLUTE MAXIMUM )  
Drain  
Drain to Source Voltage  
Gate to Source Voltage  
SS  
ID (DC)  
ID (pulse)  
PT  
60  
±20  
V
V
Drain Current (DC)  
±25  
A
Body  
Diode  
Drain Current (pulse)*  
±100  
2.0  
A
Gate  
Total Power Dissipation (TA = 25 °C)  
Total Power Dissipation (Tc = 25 °C)  
Channel Temperature  
W
W
°C  
°C  
PT  
25  
Tch  
150  
Gate Protection  
Diode  
Source  
Storage Temperature  
Tstg  
55 to +150  
*PW 10 µs, Duty Cycle 1%  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this  
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage  
may be applied to this device.  
The information in this document is subject to change without notice.  
Document No. D10623EJ2V0DS00 (2nd edition)  
Date Published April 1996 P  
Printed in Japan  
1994  
©
2SK2723  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
CHARACTERISTICS  
Drain to Source  
SYMBOL  
RDS (on) 1  
RDS (on) 2  
VGS (off)  
y fs  
TEST CONDITIONS  
VGS = 10 V, ID = 13 A  
VGS = 4 V, ID = 13 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 13 A  
VDS = 60 V, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS = 10 V  
MIN.  
TYP.  
28  
MAX.  
UNIT  
mΩ  
mΩ  
V
40  
60  
On-state Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
Gate to Source Leakage Current  
Input Capacitance  
45  
1.0  
8.0  
1.6  
18  
2.0  
S
IDSS  
10  
µA  
µA  
pF  
pF  
pF  
ns  
IGSS  
±10  
Ciss  
830  
430  
185  
21  
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td (on)  
tr  
ID = 13 A  
Rise Time  
VGS (on) = 10 V  
185  
100  
110  
35  
ns  
Turn-Off Delay Time  
td (off)  
tf  
VDD = 30 V  
ns  
Fall Time  
RG = 10 Ω  
ns  
Total Gate Charge  
QG  
ID = 25 A  
nC  
nC  
nC  
V
Gate to Source Charge  
Gate to Drain Charge  
Body Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
VDD = 48 V  
2.8  
15  
QGD  
VGS = 1
VF (S-D)  
tr r  
IF =
1.0  
60  
ns  
Qr r  
125  
nC  
Test Circuit 1 Switching Time  
Test Circuit 2 Gate Charge  
D.U.T  
D.U.T  
I = 2 mA  
G
R
L
90 %  
V
GS (on)  
10 %  
10 %  
R
G
PG.  
PG.  
VDD  
RG  
= 10 Ω  
50 Ω  
I
D
90 %  
90 %  
10 %  
I
D
VGS  
ID  
Wave Form  
0
0
t
d (on)  
t
r
t
d (on)  
t
r
t
t
on  
t
off  
t = 1µs  
Duty Cycle 1 %  
2
2SK2723  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
20 40 60 80 100 120 140 160  
0
20 60 80 100 120 140 160  
T
C
- Case Temperature - °C  
e Temperature - °C  
T vs.  
E VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
I
D(pulse)  
Pulsed  
I
D(DC)  
V
GS=10V  
20  
1
V
GS=4V  
T
C
= 25 °C  
Single Pulse  
0.1  
0.1  
4
8
1
0
6
2
V
DS  
-
Drain
VDS - Drain to Source Voltage - V  
FORWARD TRANSICS  
Pulsed  
1000  
100  
10  
T
ch=-25°C  
25°C  
75°C  
125°C  
1
V
DS=10V  
0
1
2
3
4
5
6
7
8
V
GS- Gate to Source Voltage - V  
3
2SK2723  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth(ch-a)=62.5°C/W  
Rth(ch-c)=5.0°C/W  
1
0.1  
0.01  
Single Pulse  
0.001  
100  
10µ  
µ
1m  
10m  
100m  
1
0  
1 000  
PW - Pulse Width
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
N-STATE RESISTANCE vs.  
VOLTAGE  
1000  
100  
10  
Pulsed  
V
DS=10V  
Pulsed  
T
ch=-25°C  
25°C  
0  
20  
75°C  
ID=13A  
125°C  
1
1
1
00  
0
10  
20  
30  
I
D
- Dr
VGS - Gate to Source Voltage - V  
DRAIN TO SOURCE E  
RESISTANCE vs. DRARRENT  
GATE TO SOURCE CUTOFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
80  
60  
40  
20  
0
Pulsed  
V
DS = 10 V  
= 1 mA  
I
D
2.0  
1.5  
V
GS=4V  
1.0  
0.5  
0
V
GS=10V  
- 50  
0
50  
100  
150  
1
10  
Drain Current - A  
100  
I
D
-
Tch - Channel Temperature - °C  
4
2SK2723  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
Pulsed  
80  
60  
40  
100  
10  
1
VGS=10V  
V
GS=4V  
VGS=0  
VGS=10V  
20  
0
0.1  
ID  
= 13A  
0
0
- 50  
1.5  
1.0  
100  
150  
50  
Tch - Channel Temperature -°C  
o Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
ACTERISTICS  
10 000  
1 000  
V
GS = 0  
f = 1 MHz  
t
r
t
f
C
iss  
t
d(off)  
d(on)  
t
100  
10  
10  
1
V
=30V  
VDD =10V  
RGS  
=10Ω  
G
0.1  
1
0.1  
1
10  
100  
VDS - Drain
I
D
- Drain Current - A  
REVERSE RECOVERY vs.  
DIODE CURRENT  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1 000  
100  
16  
14  
12  
10  
8
µ
80  
60  
40  
20  
di/dt =100A/ s  
VGS = 0  
I = 25A  
D
VGS  
V
DD=12V  
30V  
48V  
6
4
10  
1
2
0
VDS  
0.1  
1
10  
100  
0
10  
20  
30  
40  
IF - Dionde Current - A  
Q
G - Gate Charge - nC  
5
2SK2723  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
TEI-1202  
IEI-1209  
C10535E  
C10943X  
MEI-1202  
X10679E  
TEA-1034  
TEA-1035  
TEA-1037  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
6
2SK2723  
[MEMO]  
7
2SK2723  
No part of this document may be copied or reproduced in any form or by eans without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibilitors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringemens or other intellectual  
property rights of third parties by or arising from use of a devother liability arising  
from use of such device. No license, either express, imted under any patents,  
copyrights or other intellectual property rights of NEC C
While NEC Corporation has been making continuous efof its semiconductor devices,  
the possibility of defects cannot be eliminated endamage or injury to persons or  
property arising from a defect in an NEC semicmust incorporate sufficient safety  
measures in its design, such as redundancy, ailure features.  
NEC devices are classified into the follow
“Standard“, “Special“, and “Specific“. applies only to devices developed based on  
a customer designated “quality assuic application. The recommended applications  
of a device depend on its quality Customers must check the quality grade of each  
device before using it in a part
Standard: Computers, ofations equipment, test and measurement equipment,  
audio and vectronic appliances, machine tools, personal electronic  
equipmen
Special: Transpobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, afety equipment and medical equipment (not specifically designed  
for life supp
Specific: Aircrafts, aeroipment, submersible repeaters, nuclear reactor control systems, life  
support systems edical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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