IXGR 120N60C2
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
ISOPLUS 247 Outline
IC = 60 A; VCE = 10 V, Note 1 50
50
75
S
Cies
Coes
Cres
11
680
190
nF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
350
72
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
131
td(on)
tri
td(off)
tfi
18
25
ns
ns
Inductive load, TJ = 25°C
IC = 80 A, VGE = 15 V
95 150 ns
45 ns
0.9 1.6 mJ
VCE = 400 V, RG = Roff = 1.0 Ω
Eoff
td(on)
tri
18
25
ns
ns
Inductive load, TJ = 125°C
IC = 80 A, VGE = 15 V
Eon
td(off)
tfi
1.6
130
85
mJ
ns
VCE = 400 V, RG = Roff = 1.0 Ω
ns
Eoff
1.5
mJ
RthJC
RthJC
0.42 K/W
K/W
0.15
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %.
2: Test current IT = 100 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6771478 B2
