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IXGR60N60C2C1

型号：

IXGR60N60C2C1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

182 K

下载PDF手册
HiperFASTTM IGBT  
w/ SiC Anti-Parallel  
Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 39A  
≤£ 2.7V  
= 54ns  
IXGR60N60C2C1  
(Electrically Isolated Back Surface)  
ISOPLUS 247TM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
TAB  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Limited by Leads)  
TC = 110°C  
TC = 110°C  
75  
39  
A
A
A
A
G = Gate  
E = Emitter  
C = Collector  
14  
TC = 25°C, 1ms  
300  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 100  
A
V
Features  
(RBSOA)  
@ VCE ≤ 600  
PC  
TC = 25°C  
250  
W
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
z Isolated Mounting Surface  
z High Speed Silicon Carbide Schottky  
Co-Pack Diode  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
- No Reverse Recovery  
z 2500V Electrical Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL < 1mA  
t = 10 s  
FC  
Mounting Force  
20..120/4.5..27  
N/lb  
Advantages  
TL  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z High Power Density  
z Low Gate Drive Requirement  
TSOLD  
Weight  
5
g
Applications  
z High Frequency Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
2.5  
5.0  
V
VCE = VCES, VGE = 0V  
250 μA  
mA  
TJ = 125°C  
2
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
TJ = 125°C  
2.17  
1.83  
2.70  
V
V
DS100089A(4/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGR60N60C2C1  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXGR) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
30  
47  
S
Cies  
Coes  
Cres  
4750  
530  
66  
pF  
pF  
pF  
Qg  
143  
27  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
48  
td(on)  
tri  
27  
52  
ns  
ns  
Inductive Load, TJ = 25°C  
Eon  
td(off)  
tfi  
0.88  
92  
mJ  
ns  
IC = 50A, VGE = 15V  
150  
VCE = 400V, RG = 2Ω  
54  
ns  
Eoff  
0.48  
0.80 mJ  
td(on)  
tri  
27  
50  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
0.90  
104  
157  
1.20  
mJ  
ns  
VCE = 400V, RG = 2Ω  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
0.15  
Reverse Diode (SiC)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 20A, VGE = 0V, Note 1  
1.65  
2.00  
2.10  
V
V
TJ = 125°C  
RthJC  
1.75 °C/W  
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGR60N60C2C1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
5V  
60  
7V  
30  
0
0.0  
0.0  
6
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.2  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
7V  
I C = 100A  
I C = 50A  
I C = 25A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
I C = 100A  
TJ = 125ºC  
25ºC  
- 40ºC  
50A  
60  
40  
25A  
7
20  
0
8
9
10  
11  
12  
13  
14  
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGR60N60C2C1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 50A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20  
40  
60  
80  
100  
120  
140  
160  
650  
10  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
C
ies  
C
oes  
TJ = 125ºC  
C
res  
RG = 2Ω  
dV / dt < 10V / ns  
= 1 MHz  
5
f
10  
50  
150  
250  
350  
450  
550  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance for IGBT  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_60N60C2C1(7Y+SIC)12-17-08-A  
IXGR60N60C2C1  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
E
E
on - - - -  
off  
RG = 2  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
VGE = 15V  
Ω ,  
VCE = 400V  
I C = 100A  
TJ = 125ºC  
I C = 50A  
TJ = 25ºC  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
170  
160  
150  
140  
130  
120  
110  
100  
90  
400  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
t f  
t
d(off) - - - -  
V
E
E
on - - - -  
off  
350  
300  
250  
200  
150  
100  
50  
TJ = 125ºC, GE = 15V  
RG = 2Ω VGE = 15V  
,
CE = 400V  
V
VCE = 400V  
I C = 100A  
I C = 100A  
I C = 50A  
I C = 50A  
0
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
t f  
td(off)  
tf  
td(off)  
- - - -  
- - - -  
RG = 2Ω , VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 400V  
VCE = 400V  
TJ = 125ºC  
I
= 100A, 50A  
C
60  
60  
TJ = 25ºC  
40  
60  
40  
60  
20  
40  
20  
40  
0
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
100  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGR60N60C2C1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
160  
140  
120  
100  
80  
36  
34  
32  
30  
28  
26  
24  
22  
20  
200  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
tr  
RG = 2Ω , VGE = 15V  
td(on)  
- - - -  
tr  
td(on)  
TJ = 125ºC, VGE = 15V  
- - - -  
VCE = 400V  
VCE = 400V  
TJ = 25ºC, 125ºC  
I C = 100A  
I C = 50A  
60  
40  
60  
20  
40  
0
20  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
Fig. 21. Forward Current vs. Forward  
Voltage  
160  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
50  
tr  
RG = 2Ω , VGE = 15V  
td(on)  
- - - -  
45  
40  
35  
30  
25  
20  
15  
10  
5
VCE = 400V  
T
= 25ºC  
J
I C = 100A  
T
J
= 125ºC  
60  
I C = 50A  
40  
0
20  
0
0.5  
1
1.5  
2
2.5  
3
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
VF - Volts  
Fig. 22. Maximum Transient Thermal Impedance for Diodes  
10.00  
1.00  
0.10  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_60N60C2C1(7Y+SIC)12-17-08-A  
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