HiPerFASTTM IGBT
CES
C25
CE(sat)
V
I
V
tfi
IXGH40N30/S
300 V 60 A 1.8 V 220ns
IXGH40N30A/S 300 V 60 A 2.1 V 120ns
IXGH40N30B/S 300 V 60 A 2.4 V 75 ns
Symbol
TestConditions
Maximum Ratings
TO-247 SMD*
VCES
VCGR
T
T
= 25°C to 150°C
= 25°C to 150°C; R = 1 MΩ
300
300
V
J
J
V
GE
C (TAB)
G
VGES
VGEM
Continuous
Transient
20
30
V
V
E
TO-247 AD
IC25
IC90
ICM
T
= 25°C
60
40
A
A
A
C
T
= 90°C
C
T
= 25°C, 1 ms
160
C
C (TAB)
SSOA
(RBSOA)
V
= 15 V, T = 125°C, R = 10 Ω
I = 80
CM
A
G
C
E
GE
VJ
G
Clamped inductive load, L = 30 µH
= 25°C
@ 0.8 V
CES
PC
T
200
W
G = Gate,
E=Emitter,
C = Collector,
TAB = Collector
C
TJ
-55 ... +150
150
°C
°C
°C
* Add suffix letter "S" for surface mountable
package
TJM
Tstg
-55 ... +150
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
300
°C
°C
• Internationalstandardpackages
JEDEC TO-247 AD and surface
mountable TO-247 SMD
• Highcurrenthandlingcapability
• Newest generation HDMOS
process
• MOS Gate turn-on
- drive simplicity
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
TM
Weight
TO-247 AD
TO-247 SMD
6
4
g
g
Applications
Symbol
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
• AC motor speed control
• DC servo and robot drives
• DC choppers
J
min. typ. max.
• Uninterruptible power supplies (UPS)
• Switched-modeandresonant-mode
power supplies
BVCES
VGE(th)
I
= 250 µA, V = 0 V
300
2.5
V
V
C
GE
I
= 250 µA, V = V
5
C
CE
GE
ICES
V
V
= 0.8 V
= 0 V
T = 25°C
T = 125°C
200 µA
mA
CE
CES
J
Advantages
1
GE
J
• High power density
• Suitableforsurfacemounting
• Switchingspeedforhighfrequency
1.8V
applications
IGES
V
= 0 V, V = 20 V
100 nA
CE
GE
VCE(sat)
I
= I , V
GE
=
15
V
40N30
C
C90
40N30A
40N30B
2.1
2.4
V
V
• Easy to mount with 1 screw,
(isolated mounting screw hole)
97506E(11/01)
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