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2SK690R

型号:

2SK690R

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

164 K

High Frequency FETs  
2SK690  
GaAs N-Channel MES FET  
For UHF medium output power amplification  
unit: mm  
1.5±0.1  
4.5±0.1  
1.6±0.2  
Features  
Large collector dissipation PC  
Mini-power type package, allowing downsizing of the setand  
automatic insertion through the tape/magazine packing.  
45
08  
0.4±0.04  
5±0.08  
1.1  
Absolute Maximum Ratings (Ta = 25°C
3.0±0.15  
2
Parameter  
Drain to Source voltage  
Gate to Source voltage  
Drain current  
Symbl  
VDS  
D  
Rat
Unit  
V
3
1
0  
6  
V
1: Gate  
2: Source  
3: Drain  
marking  
0.6  
A
Gate current  
I
1
1
mA  
W
EIAJ: SC-62  
Mini-Power Type Package (3-pin)  
*
Allowable power dsiation  
Channel emperre  
Storage temprature  
PD  
Tch  
150  
°C  
°C  
°C  
Marking Symbl: M  
Internal Connection  
Tstg  
55 t+150  
5 to +85  
Operang mbientemperature Topr  
D
1k  
* PC oarder foil of the rain portion should have a area of 1cm2 or  
re and the boarthickness should be 1.7mm.  
G
Zener Di  
12V  
S
Zener
8.2V  
Elharcteristics (Ta = 25°C)  
er  
Drain c
Symbol  
Conditons  
VDS = 5V, VGS 0  
min  
typ  
max  
600  
2
Unit  
mA  
mA  
µA  
µA  
V
1, 2  
*
IDD  
IDSX  
IGSS  
150  
350  
Drain cut-ofurrent  
Gate to Source leakage current  
Gate to Drain current  
Gate to Source cut-off voltage  
Forward transfer admittance  
Output power  
VDS = 10V, VGS = 6V  
VDS = 0, VGS = 6V  
VDS = 16V  
50  
IGDO  
VGSC  
| Yfs |  
Pout  
500  
6  
VDS = 5V, IDS = 1mA  
VDS = 5V, IDS = 50mA, f = 1kHz  
90  
20  
10  
150  
25  
ms  
dBm  
dB  
VDS = V, IDS = 100mA  
= 940MHz, Pin = 10dBm  
Power gain  
PG  
15  
Additional efficiency  
ηadd  
51  
%
1 IDSS rank classification  
*
Rank  
P
Q
R
IDSS (mA)  
150 to 280  
220 to 380  
320 to 600  
2 Pulse measurement  
*
1
High Frequency FETs  
2SK690  
PD  
Ta  
ID VDS  
| Yfs |  
VGS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
180  
150  
120  
90  
300  
250  
200  
150  
100  
50  
VDS=5V  
f=1kHz  
Ta=25˚C  
Ta=25˚C  
Copper foil of the drain portion  
should have a area of 1cm2  
or more and the board  
thickness should be 1.7mm.  
VGS=– 0.8V  
– 0.9V  
– 1.0V  
– 1.1V  
– 1.2V  
– 1.3V  
60  
30  
0
0
0
40  
80  
120 160 200 240  
0
1
2
3
4
5
6
–2.0 –1.5 –1.0 – 0.5  
0
0.5  
1.0  
(
)
( )  
V
( )  
Gate to source voltage VGS V  
Ambient temperature Ta ˚C  
Drain to source voltage VDS  
Ciss, Coss, Crss  
VDS  
Pout  
Pin  
ηadd  
Pin  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0
40  
30  
60  
50  
40  
30  
20  
10  
0
VGS=–5V  
f=1MHz  
Ta=25˚C  
VDS=6V  
DS=100mA  
f=940MHz  
Pin=10dBm  
VDS=6V  
IDS=100mA  
f=940MHz  
Pin=10dBm  
I
20  
Ciss  
10  
Coss  
0
Crss  
–10  
–20  
1
3
10  
30  
100  
–30 –20 –10  
0
10  
20  
30  
–30 –20 –10  
0
10  
20  
30  
(
V
)
(
)
(
)
Drain to source voltage VDS  
Input voltage Pin dBm  
Input voltage Pin dBm  
Pout  
VGS  
ηadd  
VGS  
30  
20  
60  
50  
40  
30  
20  
10  
0
VDS=6V  
IDS=100mA  
f=940MHz  
VDS=6V  
IDS=100mA  
f=940MHz  
P
in=10dBm  
Pin=10dBm  
10  
0
–10  
–20  
–30  
0
–1  
–2  
–3  
–4  
0
– 0.5 –1.0 –1.5 –2.0 –2.5 –3.0  
( )  
V
( )  
V
Gate to source voltage VGS  
Gate to source voltage VGS  
2
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  
厂商 型号 描述 页数 下载

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2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

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2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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