NEC's1550 nm InGaAsP MQW DFB
LASER DIODE IN CAN PACKAGE
NX6504 Series
FOR FIBER OPTIC COMMUNICATIONS
DESCRIPTION
FEATURES
• OPTICAL OUTPUT POWER:
PO = 5.0 mW
• LOW THRESHOLD CURRENT:
ITH = 12 mA
• HIGH SPEED:
tr, tf = 0.5 ns MAX
NEC's NX6504 Series is a 1550 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD. This device is ideal for Synchro-
nous Digital Hierarchy (SDH) system, STM-1/OC-3, STM-4/
OC-12 and ITU-T recommendations.
• SMSR:
45 dB
• WIDE OPERATING TEMPERATURE RANGE:
TC = -10 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• BASED ON TELCORDIA RELIABILITY
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PART NUMBER
NX6504 Series
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
VOP
ITH
Operating Voltage, PO = 5.0 mW, TC = -10 to +85°C
V
–
1.0
1.5
Threshold Current
mA
mA
–
–
12
35
25
50
TC = 85°C
PTH
ηd
Threshold Output Power, TC = -10 to +85°C, IF = ITH
µW
W/A
dB
–
–
200
–
Differential Efficiency
0.15
-3.0
0.25
-1.5
ηd (@ 85°C)
ηd (@ 25°C)
∆ηd
Temperature Dependence
of Differential Efficiency
–
∆ηd = 10 log
λp
SMSR
θ⊥
Peak Emission Wavelength,
PO = 5.0 mW, RMS (-20 dB), TC = -10 to +85°C
nm
dB
1530
30
–
1570
Side mode Suppression Ratio
PO = 5.0 mW, TC = -10 to +85°C
45
Vertical Beam Angle1,(Refer to Definitions)
PO = 5.0 mW, FAHM2
deg
deg
ns
–
–
30
25
40
35
θ||
tr
Lateral Beam Angle1, PO = 5.0 mW, FAHM2
Rise Time, 10 to 90%
–
0.05
0.2
0.5
tf
Fall Time, 10 to 90%
ns
–
0.5
Im
ID
Monitor Current, PO = 5.0 mW, VR = 5 V
µA
200
600
1000
Monitor Dark Current,
VR = 5 V
nA
nA
–
–
0.1
–
10
500
VR = 5 V, TC = -10 to +85°C
Ct
Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz
pF
dB
–
6
–
20
γ
Tracking Error3 Im = const, (@ PO = 5.0 mW, TC = 25°C)
TC = -10 to +85°C
-1.0
1.0
Notes:
1. Applicable only to NX6504S Series.
2. FAHM: Full Angle at Half Maximum.
PO
3. Tracking Error: γ
(mW)
P
5.0
O
γ =
|10 log
|
[dB]
T
C = 25°C
5.0
TC = -10 to +85°C
PO
I
m
0
I
m
(mA)
California Eastern Laboratories
