请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服：823711899

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

2SK3130

型号：

2SK3130

描述：

东芝场效应晶体管硅N沟道MOS型（ π - MOSV ）[ TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ヰ-MOSV) ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

205 K

下载PDF手册
2SK3130  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3130  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
•
•
Reverse-recovery time: t = 85 ns  
rr  
Built-in high-speed flywheel diode  
Low drain-source ON resistance: R  
= 1.12 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 5.0 S (typ.)  
fs  
Low leakage current: I  
= 100 µA (max) (V = 600 V)  
DS  
DSS  
Enhancement model: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
600  
600  
±30  
6
V
V
V
DSS  
Drain-gate voltage (R  
= 20 kΩ)  
V
DGR  
GS  
Gate-source voltage  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
24  
DP  
JEDEC  
JEITA  
―
Drain power dissipation (Tc = 25°C)  
P
40  
W
D
AS  
AR  
SC-67  
2-10R1B  
Single pulse avalanche energy  
E
345  
mJ  
(Note 2)  
TOSHIBA  
Avalanche current  
I
6
4
A
Weight: 1.9 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
Storage temperature range  
T
stg  
−55~150  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
3.125  
62.5  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2:  
= 90 V, T = 25°C (initial), L = 16.8 mH, R = 25 Ω, I = 6 A  
V
DD  
ch AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device. Please handle with caution  
1
2004-07-06  
2SK3130  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= ±25 V, V = 0 V  
Min  
Typ.  
Max  
Unit  
I
V
⎯
±30  
⎯
⎯
⎯
±10  
⎯
µA  
V
GSS  
GS  
DS  
Gate-source breakdown voltage  
Drain cut-OFF current  
V
V
I = ±100 µA, V = 0 V  
G DS  
(BR) GSS  
I
V
DS  
= 600 V, V = 0 V  
GS  
⎯
100  
⎯
µA  
V
DSS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
D
= 10 mA, V  
= 0 V  
600  
2.0  
⎯
⎯
(BR) DSS  
GS  
V
V
DS  
V
GS  
V
DS  
= 10 V, I = 1 mA  
⎯
4.0  
1.55  
⎯
V
th  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 3 A  
1.12  
5.0  
1300  
130  
400  
Ω
S
DS (ON)  
D
⎪Y  
⎪
= 10 V, I = 3 A  
1.5  
⎯
fs  
D
C
C
⎯
iss  
V
DS  
= 10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
rss  
C
oss  
⎯
⎯
Rise time  
t
r
⎯
⎯
⎯
25  
45  
40  
⎯
⎯
⎯
10 V  
I
= 3 A  
V
OUT  
D
V
GS  
0 V  
Turn-ON time  
Switching time  
t
on  
R
= 100 Ω  
ns  
L
Fall time  
t
f
∼
V
300 V  
DD  
<
Duty 1%, t = 10 µs  
=
w
Turn-OFF time  
t
⎯
⎯
150  
30  
⎯
⎯
off  
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
DD  
400 V, V  
= 10 V, I = 6 A  
nC  
−
GS  
D
Gate-source charge  
Q
⎯
⎯
18  
12  
⎯
⎯
gs  
Gate-drain (“miller”) charge  
Q
gd  
Source-Drain Ratings and Characteristics  
=
(Ta 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Continuous drain reverse current (Note 1)  
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
24  
A
A
DR  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
(Note 1)  
I
⎯
DRP  
V
I
I
= 6 A, V  
= 6 A, V  
= 0 V  
= 0 V,  
⎯
−1.7  
⎯
V
DSF  
DR  
DR  
GS  
t
85  
ns  
µC  
rr  
GS  
dI /dt = 100 A/µs  
Q
0.21  
⎯
DR  
rr  
Marking  
K3130  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2004-07-06  
2SK3130  
I
– V  
DS  
I
– V  
D
D
DS  
5
4
3
10  
8
15  
15  
10  
Common source  
Tc = 25°C  
Common source  
6
10  
Tc = 25°C  
6.4  
Pulse test  
Pulse test  
5.8  
5.6  
6.2  
6
6.0  
5.8  
2
1
0
4
2
0
5.4  
5.2  
5.4  
V
= 5.0 V  
GS  
V
= 5.0 V  
GS  
0
2
4
6
8
10  
0
10  
20  
30  
40  
50  
20  
10  
Drain-source voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
– V  
V – V  
DS GS  
D
GS  
10  
8
20  
16  
12  
8
Common source  
= 20 V  
Common source  
Tc = 25°C  
V
DS  
Pulse test  
Pulse test  
6
I
D
= 6 A  
4
2
0
100  
Tc = 25°C  
3
4
1.5  
0
0
0
2
4
6
8
10  
4
8
12  
16  
Gate-source voltage  
V
(V)  
Gate-source voltage  
V
GS  
(V)  
GS  
|Y | – I  
R
– I  
DS (ON) D  
fs  
D
100  
10  
1
100  
10  
1
Common source  
= 20 V  
Common source  
Tc = 25°C  
V
DS  
Pulse test  
Pulse test  
Tc = 25°C  
V
GS  
= 10, 15 V  
100  
0.1  
0.1  
1
10  
(A)  
100  
0.1  
1
Drain current  
I
Drain current  
I
D
(A)  
D
3
2004-07-06  
2SK3130  
I
– V  
DS  
R
– Tc  
DR  
DS (ON)  
5
4
3
2
1
0
10  
Common source  
= 10 V  
Common source  
Tc = 25°C  
V
GS  
Pulse test  
Pulse test  
I
D
= 6 A  
3
1
1.5  
10  
5
3
V
= 0, −1 V  
−0.8  
GS  
0.1  
0
0
40  
80  
120  
160  
−0.2  
−0.4  
−0.6  
−1.0  
(V)  
−1.2  
Case temperature Tc (°C)  
Drain-source voltage  
V
DS  
Capacitance – V  
V
th  
– Tc  
DS  
3000  
1000  
5
4
3
2
1
Common source  
= 10 V  
C
C
iss  
V
DS  
I
D
= 1 mA  
500  
300  
Pulse test  
oss  
100  
50  
30  
Common source  
= 0 V  
V
GS  
C
rss  
f = 1 MHz  
Tc = 25°C  
10  
0.1  
0.3 0.5  
1
3
5
10  
30 50 100  
(V)  
0
−80  
−40  
0
40  
80  
120  
160  
Drain-source voltage  
V
DS  
Case temperature Tc (°C)  
P
D
– Tc  
Dynamic input/output characteristics  
50  
40  
30  
20  
10  
0
500  
20  
16  
12  
8
400  
300  
200  
100  
0
V
DS  
V
DD  
= 100 V  
200  
400  
Common source  
= 6 A  
I
D
Tc = 25°C  
4
Pulse test  
V
GS  
0
50  
0
40  
80  
120  
160  
200  
0
10  
20  
30  
40  
Case temperature Tc (°C)  
Total gate charge  
Q
(nC)  
g
4
2004-07-06  
2SK3130  
r
− t  
w
th  
10  
1
Duty = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
P
DM  
Single pulse  
0.01  
0.001  
t
T
Duty = t/T  
R
= 3.125°C/W  
th (ch-c)  
10 µ  
100 µ  
1 m  
0.01  
Pulse width  
0.1  
1
10  
t
(s)  
w
Safe operating area  
E − T  
AS ch  
100  
500  
400  
300  
200  
100  
0
I
max (pulsed) *  
D
100 µs *  
10  
I
D
max (continuous)  
1 ms *  
DC operation Tc = 25°C  
1
25  
50  
75  
100  
125  
(°C)  
150  
0.1  
Channel temperature (initial)  
T
ch  
* Single nonrepetitive pulse  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
V
DSS  
max  
0.01  
1
10  
100  
1000  
B
VDSS  
15 V  
−15 V  
Drain-source voltage  
V
DS  
(V)  
I
AR  
V
V
B
DD  
DS  
Test circuit  
Wave form  
R
V
= 25 Ω  
= 90 V, L = 16.8 mH  
⎛
⎞
1
2
G
2
VDSS  
− V  
⎜
⎜
⎟
E
=
⋅L⋅I ⋅  
AS  
⎟
B
⎝
VDSS  
DD ⎠  
DD  
5
2004-07-06  
2SK3130  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
• The information contained herein is subject to change without notice.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
6
2004-07-06  
厂商 型号 描述 页数 下载

PANASONIC

 		2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス － 小信号FET － 接合形FET ] 3 页

ETC

 		2SK0065P 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 40uA的我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

 		2SK0065Q 晶体管| JFET | N沟道| 12V V（ BR ） DSS | 150UA我（ DSS ） | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

 		2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

 		2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

 		2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

 		2SK0198(2SK198) 2SK0198 （ 2SK198 ） - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

 		2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

 		2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.244101s