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XU1000-BD-000W

型号:

XU1000-BD-000W

品牌:

MIMIX[ MIMIX BROADBAND ]

页数:

5 页

PDF大小:

159 K

17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2007 - Rev 02-May-07  
U1000-BD  
Features  
Chip Device Layout  
Fundamental Transmitter  
Low DC Power Consumption  
Optional Power Bias Configuration  
0.0 dB Conversion Gain  
+12.0 dBm Third Order Intercept (IIP3)  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s 17.0-27.0 GHz GaAs MMIC transmitter  
has a small signal conversion gain of 0.0 dB with a third  
order intercept of +12.0 dBm across the band.The device is  
a single fundamental mixer followed by a single stage  
amplifier.This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect and  
provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic  
solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id)  
50 mA  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
+10 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Input Return Loss LO (S11)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Isolation LO/RF  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
dB  
dB  
dBm  
dB  
dBm  
dBm  
VDC  
VDC  
mA  
Min.  
17.0  
17.0  
15.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
7.0  
8.0  
0.0  
+12.0  
10.0  
+2.0  
+12.0  
+3.0  
-0.5  
23  
Max.  
27.0  
27.0  
29.0  
2.0  
-
-
-
-
-
-
1,2  
Input Power for 1 dB Compression (P1dB)  
1,2  
Input Third Order Intercept (IIP3)  
-
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
-
-1.0  
-
+5.5  
0.0  
46  
(1) Optional power bias Vd=5.5V, Id=45mA will typically yield improved P1dB.  
(2) Measured using constant current.  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2007 - Rev 02-May-07  
U1000-BD  
1.613  
2.212  
Mechanical Drawing  
(0.064)  
(0.087)  
2.500  
4
3
(0.098)  
1.961  
2
(0.077)  
1.158  
(0.046)  
5
1
0.0  
0.0  
2.660  
0.391  
(0.105)  
(0.015)  
(Note: Engineering designator is 25KTX_05N3)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.124 mg.  
Bond Pad #1 (LO)  
Bond Pad #2 (IF)  
Bond Pad #3 (Vg)  
Bond Pad #4 (Vd)  
Bond Pad #5 (RF Out)  
Bypass Capacitors - See App Note [2]  
Bias Arrangement  
Vg  
Vd  
Vg  
Vd  
3
4
IF  
2
IF  
XU1000-BD  
RF  
5
RF Out  
1
LO  
LO  
Page 2 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2007 - Rev 02-May-07  
U1000-BD  
App Note [1] Biasing - As shown in the bonding diagram, this device has a single gain stage. Nominal bias is  
Vd=3V, Id=23mA. Power bias may be as high as Vd=5.5V, Id=45mA. It is also recommended to use active  
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible  
results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit  
may be a single transistor or a low power operational amplifier, with a low value resistor in series with the  
drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current  
and thus drain voltage.The typical gate voltage needed to do this is -0.5V.Typically the gate is protected with  
Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure  
negative gate bias is available before applying the positive drain supply.  
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF)  
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.  
MTTFTables  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
77 deg Celsius  
97 deg Celsius  
117 deg Celsius  
-
2.45E+12  
1.39E+11  
1.05E+10  
4.07E-04  
7.21E-03  
9.51E-02  
319.5° C/W  
-
Bias Conditions: Vd=3.0V, Id=23 mA  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
133 deg Celsius  
153 deg Celsius  
173 deg Celsius  
-
2.76E+09  
3.32E+08  
4.83E+07  
3.62E-01  
3.01E+00  
2.07E+01  
306.7° C/W  
-
Bias Conditions: Vd=5.5V, Id=46 mA  
Page 3 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2007 - Rev 02-May-07  
U1000-BD  
Typical Application  
XU1000-BD  
XB1004-BD  
XP1013-BD  
Sideband  
Reject  
RF Out  
17.7-19.7 GHz  
IF IN  
2 GHz  
LO(+12dBm)  
15.7-17.7 GHz (USB Operation)  
19.7-21.7 GHz (LSB Operation)  
Mimix Broadband MMIC-based 17.0-27.0 GHz Transmitter Block Diagram  
(Changing LO and IF frequencies as required allows design to operate as high as 27 GHz)  
Also See: Multiplier selection guide at www.mimixbroadband.com for multipliers that can be used  
to drive the XU1000-BD.  
Page 4 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
17.0-27.0 GHz GaAs MMIC  
Transmitter  
May 2007 - Rev 02-May-07  
U1000-BD  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the  
environment. For safety, observe the following procedures:  
• Do not ingest.  
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these  
by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
• Observe government laws and company regulations when discarding this product.This product must be discarded in accordance  
with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or  
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life  
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain  
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or  
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic  
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need  
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to  
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should  
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured  
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the  
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy  
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately  
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and  
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin  
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station  
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be  
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during  
placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond  
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%  
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias  
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may  
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds  
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.  
Ordering Information  
Part Number for Ordering  
XU1000-BD-000V  
XU1000-BD-000W  
XU1000-BD-EV1  
Description  
Where“V”is RoHS compliant die packed in vacuum release gel paks  
Where“W”is RoHS compliant die packed in waffle trays  
XU1000 die evaluation module  
Page 5 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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