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XU1001

型号:

XU1001

描述:

33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ]

品牌:

MIMIX[ MIMIX BROADBAND ]

页数:

8 页

PDF大小:

1444 K

33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
Features  
Chip Device Layout  
Sub-Harmonic Transmitter  
Low DC Power Consumption  
Optional Power Bias  
8.0 dB Conversion Gain  
30 dB LO/RF Isolation  
U1001  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadbands 33.0-40.0 GHz GaAs MMIC transmitter has  
a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF  
isolation.The device has a pair of sub-harmonic mixers  
configured to form an image reject mixer which requires an  
LO at 15.5-21.5 GHz.This is followed by a two stage LNA.The  
image reject mixer reduces the need for unwanted sideband  
filtering before the power amplifier.The use of the sub-  
harmonic mixer makes the provision of the LO easier than for  
fundamental mixers at these frequencies. I and Q mixer inputs  
are provided and an external 90 degree hybrid is required to  
select the desired sideband.This MMIC uses Mimix  
Broadbands 0.15 µm GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface passivation  
to protect and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
+6.0 VDC  
70 mA  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
+10 dBm  
-65 to +165 OC  
4
-55 to MTTF Table  
4
MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
34.0  
33.0  
15.5  
DC  
Typ.  
-
-
-
-
12.0  
8.0/8.0  
+12.0  
Max.  
40.0  
40.0  
21.5  
3.0  
-
-
-
-
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
-
3
dB  
3.0/3.0  
-
8.0/5.0 12.0/12.0  
Small Signal Conversion Gain IF/RF (S21) (USB/LSB)  
LO Input Drive (PLO)  
dBm  
dBc  
dB  
dBm  
VDC  
VDC  
mA  
3
Image Rejection (USB/LSB)  
-
-
30.0  
+3.0  
+3.0  
-0.5  
30  
-
-
Isolation LO/RF @ LOX2  
Input Power for 1 dB Compression (P1dB)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
1,2  
-
-1.0  
-
+5.5  
0.0  
60  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
(1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB.  
(2) Measured using constant current.  
(3) Min/Max limits over 33.0-39.5 GHz.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
Transmitter Measurements  
XU1001 Vd=3.0 V, Id=30 mA, USB  
XU1001 Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
14  
12  
10  
8
14  
12  
10  
8
6
6
4
4
2
2
0
0
35  
36  
37  
38  
39  
40  
41  
35  
36  
37  
38  
39  
40  
41  
RF Frequency (GHz)  
RF Frequency (GHz)  
+3sigma  
Median  
Mean  
-3sigma  
Max  
Median  
Mean  
-3sigma  
XU1001 Vd=3.0 V, Id=30 mA, USB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
XU1001 Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
0
0
-2  
-4  
-2  
-4  
-6  
-6  
-8  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
-22  
-10  
-12  
-14  
-16  
-18  
-20  
-22  
35  
36  
37  
38  
39  
40  
41  
35  
36  
37  
38  
39  
40  
41  
RF Frequency (GHz)  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
+3sigma  
Max  
Median  
Mean  
-3sigma  
XU1001 Vd=3.0 V Id=30 mA  
50  
40  
30  
20  
10  
0
36.00 36.50 37.00 37.50 38.00 38.50 39.00 39.50 40.00  
Frequency (GHz)  
Page 2 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
Transmitter Measurements (cont.)  
XU1001 Vd=3.0 V, Id=30 mA, USB  
XU1001 Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
15  
14  
13  
12  
11  
10  
9
15  
14  
13  
12  
11  
10  
9
8
8
7
7
6
6
5
4
5
4
3
2
1
0
3
2
1
0
30.5  
31.5  
32.5  
33.5  
34.5  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
30.5  
31.5  
32.5  
33.5  
34.5  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
RF Frequency (GHz)  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
Max  
Median  
Mean  
-3sigma  
XU1001 Vd=3.0 V, Id=30 mA, USB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
XU1001 Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
0
0
-5  
-5  
-10  
-15  
-20  
-25  
-10  
-15  
-20  
-25  
30.5  
31.5  
32.5  
33.5  
34.5  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
30.5  
31.5  
32.5  
33.5  
34.5  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
RF Frequency (GHz)  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
Max  
Median  
Mean  
-3sigma  
XU1001 Vd=3.0 V, Id=30 mA, USB/LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
30.5  
31.5  
32.5  
33.5  
34.5  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
RF Frequency (GHz)  
Max  
Median  
Mean  
Min  
Page 3 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
Mechanical Drawing  
0.541  
(0.021)  
1.143  
(0.045)  
2.500  
(0.098)  
2
3
U1001  
1.285  
(0.051)  
1
0.312  
(0.012)  
4
5
6
0.0  
0.541  
(0.021)  
1.143  
(0.045)  
2.900  
(0.114)  
0.0  
(Note: Engineering designator is 38TRX_01B2)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.491 mg.  
Bond Pad #1 (RF Out)  
Bond Pad #2 (IF2)  
Bond Pad #3 (IF1)  
Bond Pad #4 (LO)  
Bond Pad #5 (Vg)  
Bond Pad #6 (Vd)  
Bias Arrangement  
Bypass Capacitors - See App Note [2]  
IF1  
IF2  
IF1  
IF2  
2
3
U1001  
1
RF  
RF  
LO  
4
LO  
5
6
Vg  
Vd  
Vg  
Vd  
Page 4 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with both stages in parallel.  
Nominal bias is Vd=3V, Id=30mA. Power bias may be as high as Vd=5.5V, Id=60mA. It is also recommended to  
use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most  
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the  
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series  
with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct  
drain current and thus drain voltage.The typical gate voltage needed to do this is -0.5V.Typically the gate is  
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage  
to ensure negative gate bias is available before applying the positive drain supply.  
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance  
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also  
recommended.  
Note: RF and IF ports are AC coupled (DC blocks on chip). LO port is DC coupled (no DC block on chip.)  
MTTFTables  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
84 deg Celsius  
104 deg Celsius  
124 deg Celsius  
-
7.63E+11  
4.79E+10  
3.95E+09  
1.31E-03  
2.09E-02  
2.53E-01  
318.0° C/W  
-
Bias Conditions: Vd=3.0V, Id=30 mA  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
159 deg Celsius  
179 deg Celsius  
199 deg Celsius  
-
1.39E+08  
2.09E+07  
3.67E+06  
7.18E+00  
4.79E+01  
2.72E+02  
314.8° C/W  
-
Bias Conditions: Vd=5.5V, Id=60 mA  
Page 5 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
App Note [3] USB/LSB Selection -  
LSB  
USB  
For Upper Side Band operation (USB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the USB signal will reside on the  
isolated port. The input port must be  
loaded with 50 ohms.  
For Lower Side Band operation (LSB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the LSB signal will reside on the input  
port. The isolated port must be loaded  
with 50 ohms.  
IF2  
IF1  
An alternate method of Selection of USB or LSB:  
LSB  
In Phase Combiner  
-90o  
USB  
In Phase Combiner  
-90o  
IF2  
IF1  
IF2  
IF1  
Page 6 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
Typical Application  
XU1001  
XP1005  
Sideband  
Reject  
RF Out  
37.0-39.5 GHz  
IF IN  
2 GHz  
LO(+15dBm)  
17.5-18.75 GHz (USB Operation)  
19.5-20.75 GHz (LSB Operation)  
Mimix Broadband MMIC-based 33.0-40.0 GHz Transmitter Block Diagram  
(Changing LO and IF frequencies as required allows design to operate as high as 40 GHz)  
Also See: Multiplier selection guide at www.mimixbroadband.com for multipliers that can be used  
to drive the XU1001.  
Page 7 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
May 2005 - Rev 13-May-05  
U1001  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the  
human body and the environment. For safety, observe the following procedures:  
Do not ingest.  
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical  
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
Observe government laws and company regulations when discarding this product.This product must be  
discarded in accordance with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support  
devices or systems without the express written approval of the President and General Counsel of Mimix  
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for  
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a  
significant injury to the user. (2) A critical component is any component of a life support device or system whose  
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied  
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-  
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,  
sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the  
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as  
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are  
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy  
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total  
2
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001  
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated  
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere  
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold  
+
Germanium should be avoided).The work station temperature should be 310 C 10 C. Exposure to these  
-
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid  
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to  
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x  
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm  
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be  
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing  
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.  
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short  
as possible.  
Page 8 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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