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XU1001-BD-EV1

型号：

XU1001-BD-EV1

描述：

33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ]

品牌：

MIMIX[ MIMIX BROADBAND ]

页数：

8 页

PDF大小：

292 K

下载PDF手册
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
Features  
Chip Device Layout  
Sub-Harmonic Transmitter  
Low DC Power Consumption  
Optional Power Bias  
8.0 dB Conversion Gain  
30 dB LO/RF Isolation  
U1001  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has  
a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF  
isolation.The device has a pair of sub-harmonic mixers  
configured to form an image reject mixer which requires an  
LO at 15.5-21.5 GHz.This is followed by a two stage LNA.The  
image reject mixer reduces the need for unwanted sideband  
filtering before the power amplifier.The use of the  
Absolute Maximum Ratings  
sub-harmonic mixer makes the provision of the LO easier than  
for fundamental mixers at these frequencies. I and Q mixer  
inputs are provided and an external 90 degree hybrid is  
required to select the desired sideband.This MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface passivation  
to protect and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Supply Voltage (Vd)  
Supply Current (Id)  
+6.0 VDC  
70 mA  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
+10 dBm  
-65 to +165 OC  
4
-55 to MTTF Table  
4
MTTF Table  
(4) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
34.0  
33.0  
15.5  
DC  
Typ.  
-
-
-
-
12.0  
8.0/8.0  
+12.0  
Max.  
40.0  
40.0  
21.5  
3.0  
-
-
-
-
-
3
Small Signal Conversion Gain IF/RF (S21) (USB/LSB)  
LO Input Drive (PLO)  
dB  
3.0/3.0  
-
8.0/5.0 12.0/12.0  
dBm  
dBc  
dB  
dBm  
VDC  
VDC  
mA  
3
Image Rejection (USB/LSB)  
Isolation LO/RF @ LOX2  
Input Power for 1 dB Compression (P1dB)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
-
-
30.0  
+3.0  
+3.0  
-0.5  
30  
-
-
1,2  
-
-1.0  
-
+5.5  
0.0  
60  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
(1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB.  
(2) Measured using constant current.  
(3) Min/Max limits over 33.0-39.5 GHz.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
Transmitter Measurements  
XU1001-BD Vd=3.0 V, Id=30 mA, USB  
XU1001-BD Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
14  
12  
10  
8
14  
12  
10  
8
6
6
4
4
2
2
0
0
35  
36  
37  
38  
39  
40  
41  
35  
36  
37  
38  
39  
40  
41  
RF Frequency (GHz)  
RF Frequency (GHz)  
+3sigma  
Median  
Mean  
-3sigma  
Max  
Median  
Mean  
-3sigma  
XU1001-BD Vd=3.0 V, Id=30 mA, USB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
XU1001-BD Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices  
0
0
-2  
-4  
-2  
-4  
-6  
-6  
-8  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
-22  
-10  
-12  
-14  
-16  
-18  
-20  
-22  
35  
36  
37  
38  
39  
40  
41  
35  
36  
37  
38  
39  
40  
41  
RF Frequency (GHz)  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
+3sigma  
Max  
Median  
Mean  
-3sigma  
XU1001-BD Vd=3.0 V Id=30 mA  
XU1001-BD Vd=3.0 V Id=30 mA  
0
-5  
50  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
36.0  
36.5  
37.0  
37.5  
38.0  
38.5  
39.0  
39.5  
40.0  
36.00 36.50 37.00 37.50 38.00 38.50 39.00 39.50 40.00  
Frequency (GHz)  
Frequency (GHz)  
Page 2 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
Transmitter Measurements (cont.)  
XU1001-BD Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
XU1001-BD Vd=3.0 V, Id=30 mA, USB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
15  
14  
13  
12  
11  
10  
9
8
7
6
5
4
3
2
1
0
30.5  
31.5  
32.5  
33.5  
34.5  
RF Frequency (GHz)  
Median Mean  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
30.5  
31.5  
32.5  
33.5  
34.5  
RF Frequency (GHz)  
Median Mean  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
Max  
-3sigma  
Max  
-3sigma  
XU1001-BD Vd=3.0 V, Id=30 mA, USB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
XU1001-BD Vd=3.0 V, Id=30 mA, LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-10  
-15  
-20  
-25  
30.5  
31.5  
32.5  
33.5  
34.5  
RF Frequency (GHz)  
Median Mean  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
30.5  
31.5  
32.5  
33.5  
34.5  
RF Frequency (GHz)  
Median Mean  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
Max  
-3sigma  
Max  
-3sigma  
XU1001-BD Vd=3.0 V, Id=30 mA, USB/LSB  
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
30.5  
31.5  
32.5  
33.5  
34.5  
RF Frequency (GHz)  
Median Mean  
35.5  
36.5  
37.5  
38.5  
39.5  
40.5  
Max  
Min  
Page 3 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
0.541  
1.143  
(0.045)  
Mechanical Drawing  
(0.021)  
2.500  
(0.098)  
2
3
U1001  
1.285  
1
(0.051)  
0.312  
(0.012)  
4
5
6
0.0  
0.541  
1.143  
2.900  
(0.114)  
0.0  
(0.021)  
(0.045)  
(Note: Engineering designator is 38TRX_01B2)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.491 mg.  
Bond Pad #1 (RF Out)  
Bond Pad #2 (IF2)  
Bond Pad #3 (IF1)  
Bond Pad #4 (LO)  
Bond Pad #5 (Vg)  
Bond Pad #6 (Vd)  
Bias Arrangement  
IF1  
Bypass Capacitors - See App Note [2]  
IF2  
IF1  
IF2  
2
3
U1001  
1
RF  
XU1001-BD  
RF  
LO  
4
LO  
5
6
Vg  
Vd  
Vg  
Vd  
Page 4 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with both stages in parallel.  
Nominal bias is Vd=3V, Id=30mA. Power bias may be as high as Vd=5.5V, Id=60mA. It is also recommended to  
use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most  
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the  
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series  
with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct  
drain current and thus drain voltage.The typical gate voltage needed to do this is -0.5V.Typically the gate is  
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage  
to ensure negative gate bias is available before applying the positive drain supply.  
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance  
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also  
recommended.  
Note: RF port is AC coupled (DC blocks on chip). IF and LO ports are DC coupled (no DC block on chip).  
MTTFTables  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
84 deg Celsius  
104 deg Celsius  
124 deg Celsius  
-
7.63E+11  
4.79E+10  
3.95E+09  
1.31E-03  
2.09E-02  
2.53E-01  
318.0° C/W  
-
Bias Conditions: Vd=3.0V, Id=30 mA  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
159 deg Celsius  
179 deg Celsius  
199 deg Celsius  
-
1.39E+08  
2.09E+07  
3.67E+06  
7.18E+00  
4.79E+01  
2.72E+02  
314.8° C/W  
-
Bias Conditions: Vd=5.5V, Id=60 mA  
Page 5 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
App Note [3] USB/LSB Selection -  
LSB  
USB  
For Upper Side Band operation (USB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the USB signal will reside on the  
isolated port. The input port must be  
loaded with 50 ohms.  
For Lower Side Band operation (LSB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the LSB signal will reside on the input  
port. The isolated port must be loaded  
with 50 ohms.  
IF2  
IF1  
An alternate method of Selection of USB or LSB:  
LSB  
In Phase Combiner  
-90o  
USB  
In Phase Combiner  
-90o  
IF2  
IF1  
IF2  
IF1  
Page 6 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
Typical Application  
XU1001-BD  
XP1005-BD  
Sideband  
Reject  
RF Out  
37.0-39.5 GHz  
IF IN  
2 GHz  
LO(+15dBm)  
17.5-18.75 GHz (USB Operation)  
19.5-20.75 GHz (LSB Operation)  
Mimix Broadband MMIC-based 33.0-40.0 GHz Transmitter Block Diagram  
(Changing LO and IF frequencies as required allows design to operate as high as 40 GHz)  
Also See: Multiplier selection guide at www.mimixbroadband.com for multipliers that can be used  
to drive the XU1001-BD.  
Page 7 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
33.0-40.0 GHz GaAs MMIC  
Transmitter  
April 2007 - Rev 19-Apr-07  
U1001-BD  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the  
environment. For safety, observe the following procedures:  
• Do not ingest.  
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these  
by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
• Observe government laws and company regulations when discarding this product.This product must be discarded in accordance  
with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or  
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life  
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain  
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or  
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic  
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need  
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to  
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should  
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured  
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the  
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy  
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately  
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and  
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin  
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station  
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be  
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during  
placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond  
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%  
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias  
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may  
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds  
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.  
Ordering Information  
Part Number for Ordering  
XU1001-BD-000V  
XU1001-BD-000W  
XU1001-BD-EV1  
Description  
Where“V”is RoHS compliant die packed in vacuum release gel paks  
Where“W”is RoHS compliant die packed in waffle trays  
XU1001 die evaluation module  
Page 8 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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