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IXGR32N60CD1

型号：

IXGR32N60CD1

描述：

HiPerFAST IGBT与二极管ISOPLUS247[ HiPerFAST IGBT with Diode ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

129 K

下载PDF手册
HiPerFASTTM IGBT  
with Diode  
IXGR 32N60CD1 VCES  
IC25  
= 600 V  
= 45 A  
VCE(SAT)typ = 2.1 V  
= 55 ns  
ISOPLUS247TM  
tfi(typ)  
(Electrically Isolated Backside)  
ISOPLUS 247TM (IXGR)  
E153432  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
45  
28  
A
A
A
Isolated backside*  
TC = 90°C  
TC = 25°C, 1 ms  
120  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
Clamped inductive load, L = 100 mH  
ICM = 64  
@ 0.8 VCES  
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
140  
W
*Patentpending  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
MaximumLeadandTabtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• DCBIsolatedmountingtab  
• Meets TO-247AD package Outline  
• Highcurrenthandlingcapability  
• Latest generation HDMOSTM process  
• MOS Gate turn-on  
VISOL  
50/60 Hz, RMS  
t = 1 min leads-to housing  
2500  
5
V~  
g
Weight  
- drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
BVCES  
VGE(th)  
IC = 250mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
V
5.0  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
3
mA  
mA  
Advantages  
• Easy assembly  
• High power density  
• Very fast switching speeds for high  
frequencyapplications  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
VCE(sat)  
IC = IT, VGE = 15 V  
Note 1  
2.1  
2.5  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98631B(7/00)  
1 - 5  
IXGR 32N60CD1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS 247 (IXGR) OUTLINE  
IC = IT; VCE = 10 V,  
25  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
2700  
240  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
110  
22  
nC  
nC  
nC  
Qge  
Qgc  
IC = IT, VGE = 15 V, VCE = 0.5 VCES  
40  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
4 no connection  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
25  
20  
ns  
ns  
ns  
ns  
mJ  
IC = IT, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 4.7 W  
85  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
55  
Dim.  
Millimeter  
Inches  
,
Min. Max. Min. Max.  
Eoff  
0.32  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
td(on)  
tri  
25  
25  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IT, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = Roff = 4.7 W  
Remarks: Switching times may  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
Eon  
td(off)  
tfi  
1
mJ  
C
D
E
0.61  
0.80  
20.80 21.34  
15.75 16.13  
.024 .031  
.819 .840  
.620 .635  
110  
100  
170 ns  
160 ns  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Eoff  
0.85  
1.25 mJ  
3.81  
4.32  
RthJC  
RthCK  
0.90 K/W  
K/W  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 .244  
.170 .190  
0.15  
S
T
U
13.21 13.72  
15.75 16.26  
1.65  
.520 .540  
.620 .640  
.065 .080  
3.03  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
IF = IT, VGE = 0 V, Pulse test  
min. typ. max.  
TJ = 150°C  
TJ = 25°C  
1.6  
2.5  
V
V
t
£ 300 ms, duty cycle d £ 2 %  
IRM  
trr  
IF = IT, VGE = 0 V, -diF/dt = 100 A/ms  
VR = 100 V  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C  
6
A
ns  
ns  
TJ = 100°C 100  
25  
RthJC  
1.15 K/W  
Note: 1. IT = 32A  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXGR 32N60CD1  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
TJ = 25°C  
VGE = 15V  
VGE = 15V  
13V  
TJ = 25°C  
9V  
11V  
13V  
11V  
9V  
7V  
5V  
7V  
40  
5V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
VCE - Volts  
VCE - Volts  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
100  
80  
60  
40  
20  
0
1.50  
1.25  
1.00  
0.75  
0.50  
11V  
TJ = 125°C  
VGE = 15V  
13V  
VGE = 15V  
9V  
I
C = 64A  
IC = 32A  
IC = 16A  
7V  
5V  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Fig. 4. Temperature Dependence of VCE(sat)  
Fig. 3. High Temperature Output Characteristics  
100  
80  
60  
40  
20  
0
10000  
V
CE = 10V  
f = 1Mhz  
C
iss  
1000  
100  
10  
C
oss  
C
rss  
TJ = 125°C  
TJ = 25°C  
3
4
5
6
7
8
9
10  
0
5
10 15 20 25 30 35 40  
VCE-Volts  
VGE - Volts  
Fig. 5. Admittance Curves  
Fig. 6. Capacitance Curves  
© 2000 IXYS All rights reserved  
3 - 5  
IXGR 32N60CD1  
4
3
2
1
0
8
1.00  
0.75  
0.50  
0.25  
0.00  
4
3
2
1
0
TJ = 125°C  
TJ = 125°C  
RG = 10  
E(OFF)  
IC = 64A  
6
E(ON)  
E(OFF)  
E(ON)  
4
E(ON)  
E(OFF)  
IC = 32A  
IC = 16A  
2
E(ON)  
E(OFF)  
0
60  
0
10  
20  
30  
40  
50  
0
20  
40  
IC - Amperes  
60  
80  
RG - Ohms  
Fig. 7. Dependence of EON and EOFF on IC.  
Fig. 8. Dependence of EON and EOFF on RG.  
16  
100  
64  
IC = 32A  
VCE = 300V  
12  
8
TJ = 125°C  
RG = 4.7  
10  
1
dV/dt < 5V/ns  
4
0
0.1  
0
25  
50  
75  
100  
125  
0
100  
200  
300  
400  
500  
600  
VCE - Volts  
Qg - nanocoulombs  
Fig. 10. Turn-off Safe Operating Area  
Fig. 9. Gate Charge  
1
D=0.5  
D=0.2  
0.1  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
Pulse Width - Seconds  
0.1  
1
10  
Fig. 11. Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 5  
IXGR 32N60CD1  
60  
A
1000  
nC  
30  
A
TVJ=100°C  
VR = 300V  
TVJ=100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/ s  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Fig.12. Forward current IF versus VF  
2.0  
Fig. 13. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14.Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ=100°C  
TVJ=100°C  
IF = 30A  
VR = 300V  
V
µs  
ns  
VFR  
tfr  
VFR  
trr  
1.5  
Kf  
15  
10  
5
0.75  
0.50  
0.25  
0.
tfr  
80  
70  
60  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
IRM  
0.5  
Qr  
0.0  
0
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
A/ s  
0
200 400 600 1000  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 17.Peak forward voltage VFR and tfr  
versus diF/dt  
Fig. 15. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16.Recovery time trr versus -diF/dt  
10  
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
1
2
3
4
0.436  
0.482  
0.117  
0.115  
0.0055  
0.0092  
0.0007  
0.0418  
ZthJC  
0.1  
0.01  
0.001  
0.0001  
DSEP 2x31-06B  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18. Transient thermal resistance junction to case  
© 2000 IXYS All rights reserved  
5 - 5  
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