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2SK2217

型号:

2SK2217

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

8 页

PDF大小:

46 K

2SK2217  
Silicon N-Channel MOS FET  
ADE-208-347A  
2nd. Edition  
Application  
UHF power amplifier  
Features  
·
·
High power output, high gain, high efficiency  
PG = 10 dB, Pout = 60 W, hD = 55% typ (f = 860 MHz)  
Compact package  
Outline  
2SK2217  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
60  
VGSS  
±10  
V
ID  
10  
A
Channel dissipation  
Channel temperature  
Storage temperature  
Note: 1. Value at TC = 25°C  
Pch*1  
Tch  
75  
W
°C  
°C  
150  
Tstg  
–55 to +150  
Electrical Characteristics (TC = 25°C)  
Item  
Symbol Min  
Typ  
Max  
1
Unit  
mA  
µA  
V
Test conditions  
Drain leakage current  
Gate leakage current  
Gate to source cutoff voltage  
Drain to source voltage  
Forward transfer admittance  
Input capacitance  
IDSS  
VDS = 60 V, VGS = 0  
VGS = ±10 V, VDS = 0  
VDS = 10 V, ID = 1 mA  
VGS = 10 V, ID = 5 A*1  
VDS = 10 V, ID = 5 A*1  
IGSS  
± 3  
1.6  
2.5  
VGS(off)  
VDS(on)  
|yfs|  
0.3  
1.2  
4.0  
250  
V
3.0  
S
Ciss  
pF  
VGS = 5 V, VDS = 0  
f = 1MHz  
Output capacitance  
Coss  
85  
pF  
VDS = 10V, VGS = 0  
f = 1MHz  
Output power  
POUT  
40  
60  
55  
W
%
VDS = 28 V, IDO = 0.2 A  
f = 860 MHz, Pin = 6 W  
Drain efficiency  
hD  
Note: 1. Pulse Test  
2
2SK2217  
3
2SK2217  
4
2SK2217  
5
2SK2217  
6
2SK2217  
Package Dimensions  
Unit: mm  
7
2SK2217  
When using this document, keep the following in mind:  
1. This document may, wholly or partially, be subject to change without notice.  
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or  
part of this document without Hitachi’s permission.  
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or  
any other reasons during operation of the user’s unit according to this document.  
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and  
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any  
intellectual property claims or other problems that may result from applications based on the  
examples described herein.  
5. No license is granted by implication or otherwise under any patents or other rights of any third party  
or Hitachi, Ltd.  
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL  
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.  
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products  
are requested to notify the relevant Hitachi sales offices when planning to use the products in  
MEDICAL APPLICATIONS.  
8
厂商 型号 描述 页数 下载

PANASONIC

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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