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2SK3797

型号：

2SK3797

描述：

硅N沟道MOS型[ Silicon N-Channel MOS Type ]

品牌：

TOSHIBA[ TOSHIBA ]

页数：

6 页

PDF大小：

221 K

下载PDF手册
2SK3797  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)  
2SK3797  
Switching Regulator Applications  
Unit: mm  
•
•
•
•
Low drain-source ON resistance: R  
= 0.32Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 7.5 S (typ.)  
fs  
= 100 μA (V  
Low leakage current: I  
= 600 V)  
DSS  
DS  
DS  
Enhancement model: V = 2.0~4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
Maximum Ratings  
=
(Ta 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
600  
600  
±30  
13  
V
V
V
DSS  
Drain-gate voltage (R  
= 20 kΩ)  
V
DGR  
GS  
Gate-source voltage  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (t = 1 ms)  
I
52  
50  
DP  
(Note 1)  
1: Gate  
2: Drain  
3: Source  
Drain power dissipation (Tc = 25°C)  
P
W
D
AS  
AR  
Single pulse avalanche energy  
E
1033  
mJ  
(Note 2)  
Avalanche current  
I
13  
5.0  
A
JEDEC  
JEITA  
―
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
SC-67  
2-10U1B  
Weight: 1.7 g (typ.)  
T
150  
ch  
TOSHIBA  
Storage temperature range  
T
-55~150  
stg  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
2
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
2.5  
°C/W  
°C/W  
th (ch-c)  
62.5  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.  
Note 2:  
= 90 V, T = 25°C (initial), L = 10.7 mH, I = 13 A, R = 25 Ω  
V
DD  
1
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
3
1
2005-01-24  
2SK3797  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
= ±25 V, V = 0 V  
DS  
⎯
±30  
⎯
⎯
⎯
±10  
⎯
µA  
V
GSS  
GS  
Gate-source breakdown voltage  
Drain cutoff current  
V
V
I
G
= ±10 µA, V  
= 0 V  
DS  
(BR) GSS  
I
V
= 600 V, V  
= 0 V  
⎯
100  
⎯
µA  
V
DSS  
DS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
I
D
= 10 mA, V  
= 0 V  
600  
2.0  
⎯
⎯
(BR) DSS  
GS  
= 10 V, I = 1 mA  
V
V
V
V
⎯
4.0  
0.43  
⎯
V
th  
DS  
GS  
DS  
D
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
R
= 10 V, I = 6.5 A  
0.32  
7.5  
3100  
20  
Ω
S
DS (ON)  
D
⎪Y  
⎪
= 10 V, I = 7.0 A  
2.1  
⎯
fs  
D
C
C
⎯
iss  
V
= 25 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
⎯
⎯
DS  
rss  
C
⎯
270  
⎯
oss  
Rise time  
t
r
⎯
⎯
⎯
⎯
60  
⎯
⎯
⎯
⎯
10 V  
GS  
0 V  
I
= 6.5 A  
V
OUT  
D
V
R
=
L
Turn-on time  
t
110  
50  
on  
50 Ω  
30Ω  
Switching time  
ns  
Fall time  
t
f
V
200 V  
−
DD  
<
Duty 1%, t = 10 µs  
Turn-off time  
t
215  
w
off  
62  
40  
22  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Q
⎯
⎯
⎯
⎯
⎯
⎯
g
∼
−
V
400 V, V  
= 10 V, I = 13 A  
nC  
Q
DD  
GS  
D
gs  
Q
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
13  
Unit  
A
Continuous drain reverse current  
I
⎯
⎯
⎯
⎯
DR  
(Note 1)  
(Note 1)  
Pulse drain reverse current  
Forward voltage (diode)  
Reverse recovery time  
Reverse recovery charge  
I
⎯
⎯
⎯
⎯
⎯
⎯
52  
−1.7  
⎯
A
V
DRP  
V
I
I
= 13 A, V  
= 13 A, V  
= 0 V  
DSF  
DR  
DR  
GS  
t
= 0 V,  
1050  
15  
ns  
µC  
rr  
GS  
dI /dt = 100 A/µs  
Q
⎯
DR  
rr  
Marking  
K3797  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
2
2005-01-24  
2SK3797  
I
– V  
I
– V  
DS  
D
DS  
D
14  
12  
30  
25  
20  
15  
10  
5
COMMON SOURCE  
Tc = 25°C  
COMMON SOURCE  
8V  
10V  
10V  
Tc = 25°C  
PULSE TEST  
PULSE TEST  
7V  
8V  
7V  
6.6V  
6.2V  
5.8V  
10  
8
6.6V  
6.2V  
6
4
5.4V  
5V  
5.8V  
5.4V  
2
0
5V  
V
GS  
= 4V  
V
GS  
= 4 V  
0
0
0
2
4
6
8
5
10  
15  
20  
25  
30  
10  
DRAIN−SOURCE VOLTAGE  
V
DS  
(V)  
DRAIN−SOURCE VOLTAGE  
V
DS  
(V)  
I
– V  
V – V  
DS GS  
D
GS  
30  
10  
8
COMMON SOURCE  
Tc = 25℃  
COMMON SOURCE  
= 20 V  
V
DS  
25  
20  
PULSE TEST  
PULSE TEST  
6
15  
10  
5
I
= 13 A  
D
4
Tc = 100°C  
Tc = 25°C  
I
D
= 6.5 A  
= 3 A  
2
I
D
Tc = −55°C  
0
0
0
0
2
4
6
8
10  
4
8
12  
16  
20  
GATE−SOURCE VOLTAGE  
V
(V)  
GATE−SOURCE VOLTAGE  
V
(V)  
GS  
GS  
⎪Y ⎪ – I  
fs  
R
– I  
DS (ON) D  
D
100  
1
0.3  
0.1  
COMMON SOURCE  
Tc = 25°C  
COMMON SOURCE  
= 20 V  
V
DS  
PULSE TEST  
PULSE TEST  
Tc = −55°C  
V
V
= 10 V  
= 15 V  
GS  
10  
25  
100  
GS  
0.1  
0.1  
10  
100  
0.1  
1
10  
100  
DRAIN CURRENT  
I
D
(A)  
DRAIN CURRENT  
I
D
(A)  
3
2005-01-24  
2SK3797  
R
– Tc  
I
– V  
DS (ON)  
DR  
DS  
1
100  
10  
1
COMMON SOURCE  
Tc = 25°C  
COMMON SOURCE  
= 10 V  
V
GS  
0.8  
PULSE TEST  
PULSE TEST  
0.6  
0.4  
0.2  
I
D
= 13A  
6.5  
3
10  
5
3
1
V
GS  
= 0, −1 V  
0
0.1  
−80  
−40  
0
40  
80  
120  
160  
100  
160  
0
−0.2  
−0.4  
−0.6  
−0.8  
−1  
−1.2  
CASE TEMPERATURE Tc (°C)  
DRAIN−SOURCE VOLTAGE  
V
(V)  
DS  
Capacitance – V  
DS  
V
– Tc  
th  
5
4
10000  
1000  
C
iss  
3
2
1
C
oss  
100  
10  
COMMON SOURCE  
= 10 V  
COMMON SOURCE  
= 0 V  
V
DS  
V
GS  
I
D
= 1 mA  
C
rss  
f = 1 MHz  
Tc = 25°C  
PULSE TEST  
0
−80  
0.1  
1
10  
−40  
0
40  
80  
120  
160  
DRAIN−SOURCE VOLTAGE  
V
(V)  
CASE TEMPERATURE Tc (°C)  
DS  
DYNAMIC INPUT/OUTPUT  
CHARACTERISTICS  
P
– Tc  
D
80  
60  
40  
20  
0
500  
20  
16  
V
DS  
400  
300  
V
= 100 V  
DD  
12  
200V  
8
4
400V  
200  
100  
0
COMMON SOURCE  
= 13 A  
V
GS  
I
D
Tc = 25°C  
PULSE TEST  
0
100  
20  
80  
0
40  
80  
120  
0
40  
60  
CASE TEMPERATURE Tc (°C)  
TOTAL GATE CHARGE  
Q
g
(nC)  
4
2005-01-24  
2SK3797  
r
– t  
w
th  
10  
1
Duty=0.5  
0.2  
0.1  
0.1  
0.05  
P
DM  
0.02  
t
0.01  
0.01  
SINGLE PULSE  
T
Duty = t/T  
R
= 2.5°C/W  
th (ch-c)  
0.001  
10μ  
100ｍ  
10  
1ｍ  
10ｍ  
1
100μ  
PULSE WIDTH  
t
(s)  
w
SAFE OPERATING AREA  
E
– T  
ch  
AS  
100  
1200  
I
D
max (PULSED) *  
100 µs *  
1000  
800  
600  
400  
I
D
max (CONTINOUS)  
10  
1 ms *  
DC OPERATION  
Tc = 25°C  
1
200  
*SINGLE NONREPETITIVE  
PULSE Tc = 25°C  
0
25  
0.1  
50  
75  
100  
125  
150  
CURVES MUST BE  
CHANNEL TEMPERATURE (INITIAL)  
(°C)  
DERATED LINEARLY WITH  
INCREASE IN TEMPERATURE  
T
ch  
V
DSS  
max  
0.01  
B
VDSS  
100  
1000  
10  
1
15 V  
I
AR  
DRAIN−SOURCE VOLTAGE  
V
DS  
(V)  
−15 V  
V
V
DS  
DD  
TEST CIRCUIT  
WAVEFORM  
⎛
⎞
⎟
⎟
⎠
1
2
B
R
= 25 Ω  
= 90 V, L = 10.7mH  
2
VDSS  
G
⎜
⎜
⎝
=
⋅L⋅I ⋅  
Ε
AS  
−
V
DD  
V
B
VDSS  
DD  
5
2005-01-24  
2SK3797  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
• The information contained herein is subject to change without notice.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
6
2005-01-24  
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ETC

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ETC

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