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2SK3938G

型号:

2SK3938G

品牌:

PANASONIC[ PANASONIC ]

页数:

3 页

PDF大小:

426 K

This product complies with the RoHS Directive (EU 2002/95/EC).  
Silicon MOSFETs (Small Signal)  
2SK3938  
Silicon N-channel MOSFET  
For switching circuits  
Unit: mm  
+0.05  
–0.02  
+0.05  
0.10  
–0.02  
Features  
0.33  
High-speed switching  
3
SSSMini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing  
+5  
1
2
0.23  
–0.0
Absolute Maximum Ratings T
a
= 25
°
C  
(0.40)(0.40)  
.80±0.05  
±0.05  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
30  
Unit  
V
V
±2  
mA  
mA  
mW  
°
C  
Peak drain current  
IP  
200  
Power dissipation  
PD  
100  
1: Gate  
2: Source  
3: Drain  
Channel temperature  
Storage temperature  
T
15  
ch  
SSSMini3-F1 Package  
T
stg  
55 to +15  
°
C  
Marking Symbol: 6U  
Electrical Characterisics T
a
= 25
°
C
±
3
°
C  
Parameter  
Drain-soce surrendage  
Drain-soure ctoff nt  
Ge-source cutoff curren
Gate theshold voltag
Conditions  
Min  
Typ  
Max  
Unit  
V
VD
ISS  
IGSS  
VTH  
ID = 10 µA, VGS = 0  
30  
VDS = 20 V, VGS = 0  
1.0  
±10  
1.5  
12  
µA  
µA  
V
VGS ±10 V, VDS = 0  
ID = 1.0 µA, VD= 3 V  
ID = 10 mA, VGS = 2.5 V  
ID = 10 mA, VGS = 4.0 V  
ID = 10 mA, VDS = 3 V, f = 1 kHz  
0.5  
1.0  
7
Drain-source ON
Forward transfer admitta
RDS(on)  
mS  
pF  
5
8
20  
55  
Yfs  
Short-circuit forward transfer capacitance  
(Common source)  
Ciss  
12  
10  
6
Short-circuit output capacitance  
(Common source)  
Coss  
Crss  
VDS = 3 V, VGS = 0, f = 1 MHz  
pF  
pF  
Reverse transfer capacitance  
(Common source)  
Turn-on time
*  
Turn-off time
*  
ton  
toff  
VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA  
VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA  
350  
350  
ns  
ns  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : ton , t
off
measurement circuit  
*
VOUT  
290 Ω  
90%  
10%  
V
GS  
VOUT  
V
GS
=
0 V to 3 V  
10%  
100
µ
F  
V
DD
=
3 V  
90%  
50 Ω  
t
t
off  
Publication date: December 2004  
SJF00043AED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
2SK3938  
PD
T  
ID
VDS  
ID
VGS  
a
120  
120  
V
DS = 3 V  
Ta = −25°C  
Ta = 25°C  
120  
80  
25°C  
85°C  
V
GS = 2.8 V  
80  
40  
80  
40  
0
2.6 V  
2.4 V  
40  
0
2 V  
.0 V  
0
0
80  
0
0
1
2
3
4
5
40  
120  
4
12  
Ambient temperature Ta (°C)  
Drin-source voltage VDS (V)  
Gate-source voltage VGS (V)  
Yfs
 
VGS  
Yfs
 
ID  
RDS(on)
VGS  
20  
16  
12  
8
= 3 V  
I
D = 10 mA  
Ta = −25°C  
V
DS = 3 V  
Ta = 25°C  
120  
80  
120  
80  
25°C  
C  
0
40  
Ta = 85°C  
4
0
25°C  
25°C  
0
0
0
4
8
12  
0
20  
40  
60  
80  
100  
1
2
3
Gate-source voltage VGS (V)  
Drain current ID (mA)  
Gate-source voltge VGS (V
2
SJF00043AED  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  
厂商 型号 描述 页数 下载

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ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

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2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

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2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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