IXGQ 35N120BD1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-3P (IXGQ) Outline
IC = 35A; VCE = 10 V,
Note 2.
28
38
S
Cies
Coes
Cres
2300
190
80
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
140
20
50
nC
nC
nC
IC = 40A, VGE = 15 V, VCE = 0.5 VCES
td(on)
40
ns
Inductive load, TJ = 25°C
IC = 35 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 3 Ω
Note 1.
tri
50
ns
Eon
0.9
mJ
td(off)
tfi
Eoff
270
160
3.8
500 ns
300 ns
7.0 mJ
td(on)
tri
Eon
td(off)
tfi
45
60
1.9
380
400
8.0
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC = 35A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 3 Ω
Note 1
Eoff
RthJC
RthCK
0.35 K/W
K/W
0.25
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
I = 10 A, VGE = 0 V
3.3
2.2
V
V
IFF = 10 A, VGE = 0 V, TJ = 125°C
IRM
trr
IF = 10 A; -diF/dt = 100 A/µs, VR = 100 V
VGE = 0 V; TJ = 125°C
4.0
190
A
ns
trr
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
40
ns
RthJC
2.5 K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
