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IXGN100N170

型号：

IXGN100N170

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

6 页

PDF大小：

186 K

下载PDF手册
VCES = 1700V  
IC90 = 95A  
VCE(sat)  3.0V  
High Voltage  
IGBT  
IXGN100N170  
E
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
G
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E   
IC25  
IC90  
TC = 25°C  
TC = 90°C  
160  
95  
A
A
C
ICM  
TC = 25°C, 1ms  
600  
A
G = Gate, C = Collector, E = Emitter  
either emitter terminal can be used as  
Main or Kelvin Emitter  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 1  
Clamped Inductive Load  
ICM = 200  
A
@0.8 • VCES  
tsc  
VGE = 15V, VCE = 1250V, TJ = 125°C  
10  
μs  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
735  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Optimized for Low Conduction and  
-55 ... +150  
Switching Losses  
Isolation Voltage 2500V~  
Short Circuit Capability  
International Standard Package  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
High Current Handling Capability  
Weight  
30  
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1700  
3.0  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Welding Machines  
BVCES  
VGE(th)  
ICES  
IC = 3mA, VGE = 0V  
IC = 8mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.0  
50 A  
mA  
200 nA  
2.5 3.0  
TJ = 125C  
3
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
V
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100091B(10/16)  
IXGN100N170  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
36  
64  
S
Cies  
Coes  
Cres  
9200  
455  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
150  
Qg  
Qge  
Qgc  
425  
65  
nC  
nC  
nC  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
186  
td(on)  
tr  
td(off)  
tf  
35  
192  
285  
395  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 100A, VGE = 15V  
VCE = 0.5 • VCES, RG = 1  
td(on)  
tr  
td(off)  
tf  
35  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 100A, VGE = 15V  
250  
285  
435  
ns  
ns  
VCE = 0.5 • VCES, RG = 1  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
0.05  
Note:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
SOT-227B (IXGN) OUTLINE  
M4-7 NUT  
(4 PLACES)  
J
A
B
D
N
C
M
L
S
E
F
G
H
O
U
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGN100N170  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
5V  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
200  
150  
100  
50  
V
= 15V  
GE  
V
= 15V  
13V  
11V  
GE  
I
=200A  
C
9V  
7V  
I
= 100A  
C
5V  
I
= 50A  
75  
C
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
180  
160  
140  
120  
100  
80  
T
J
= 25ºC  
I
= 200A  
C
T
J
= - 40ºC  
25ºC  
125ºC  
100A  
60  
40  
50A  
6
20  
0
5
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXGN100N170  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
= - 40ºC  
J
V
I
= 850V  
CE  
= 100A  
= 10mA  
C
I
G
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
200  
160  
120  
80  
C
ies  
C
oes  
T
= 125ºC  
J
40  
R
= 1Ω  
G
dv / dt < 10V / ns  
C
res  
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGN100N170  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
320  
280  
240  
200  
160  
120  
80  
320  
280  
240  
200  
160  
120  
80  
R
= 1Ω, V = 15V  
GE  
G
R
= 1Ω, V = 15V  
GE  
G
V
= 850V  
CE  
V
= 850V  
CE  
I
= 100A  
C
T = 125ºC  
J
T
J
= 25ºC  
I
= 50A  
C
40  
40  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
450  
400  
350  
300  
250  
200  
150  
100  
50  
65  
60  
55  
50  
45  
40  
35  
30  
25  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
400  
380  
360  
340  
320  
300  
280  
260  
240  
t f  
td(off)  
t r  
td(on  
)
R
G
= 1Ω, VGE = 15V  
T
J
= 125ºC, V = 15V  
GE  
VCE = 850V  
V
= 850V  
CE  
IC = 50A  
I
= 100A  
C
I
= 50A  
C
IC = 100A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
420  
400  
380  
360  
340  
320  
300  
280  
260  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
900  
800  
700  
600  
500  
400  
300  
200  
100  
t f  
td(off  
)
t f  
td(off  
)
T
J
= 125ºC, V = 15V  
GE  
R
G
= 1Ω, V = 15V  
GE  
V
= 850V  
CE  
V
= 850V  
CE  
I
= 50A  
C
T
J
= 125ºC  
T
J
= 25ºC  
I
= 100A  
C
1
2
3
4
5
6
7
8
9
10  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
IC - Amperes  
RG - Ohms  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXG_100N170(9P)01-26-12-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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