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2SK3973

型号:

2SK3973

品牌:

PANASONIC[ PANASONIC ]

页数:

2 页

PDF大小:

326 K

Silicon MOSFETs (Small Signal)  
2SK3973  
Silicon N-channel MOSFET  
For switching circuits  
Unit: mm  
Features  
+0.05  
–0.02  
+0.05  
0.10  
–0.02  
0.33  
Low ON resistance Ron  
3
High-speed switching  
Allowing 1.8 V drive  
SSSMini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing  
+0.05  
1
2
0.23  
–0.02  
(0.40)(0.40)  
0.80±0.05  
1.20±0.05  
Absolute Maximum Ratings T
a
= 25
°
C  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
20  
Unit  
V
5°  
V
±12  
100  
mA  
mA  
mW  
°
C  
Peak drain current  
IDP  
200  
1: Gate  
2: Source  
3: Drain  
Drain power dissipation  
Channel temperature  
Storage temperature  
PD  
100  
SSSMini3-F1 Package  
T
ch  
125  
Marking Symbol: 5V  
T
stg  
55 to +125  
°
C  
Electrical Characteristics T
a
= 25
°
C
±
3
°
C  
Parameter  
Drain-source surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Gate threshold voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VDSS  
IDSS  
IGSS  
VTH  
ID = 10 µA, VGS = 0  
VDS = 10 V, VGS = 0  
VGS ±10 V, VDS = 0  
ID = 50 µA, VDS = 5.0 V  
ID = 1 mA, VGS = 1.8 V  
20  
1.0  
±10  
1.2  
13  
6
µA  
µA  
V
0.4  
0.8  
6
Drain-source ON resistance  
Forward transfer admittance  
RDS(on) ID = 10 mA, VGS = 2.5 V  
ID = 10 mA, VGS = 4.0 V  
4
3
4
ID = 10 mA, VDS = 3 V  
20  
55  
mS  
pF  
Yfs  
Short-circuit input capacitance  
(Common source)  
Ciss  
10  
13  
Short-circuit output capacitance  
(Common source)  
VDS = 3 V, VGS = 0, f = 1 MHz  
Coss  
pF  
Reversetransfercapacitance(Commonsource)  
Turn-on time
*  
Crss  
ton  
5
pF  
ns  
ns  
VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA  
VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA  
250  
480  
Turn-off time
*  
toff  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : ton , t
off
measurement circuit  
*
VOUT  
290 Ω  
90%  
10%  
V
GS  
VOUT  
V
GS
=
0 V to 3 V  
10%  
100 µF  
VDD
=
3 V  
90%  
50 Ω  
t
t
off  
Publication date: June 2005  
SJF00047AED  
1
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd. Industrial Co., Ltd.  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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