IXGP30N60B4D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-220 (IXGP) Outline
Min.
Typ.
Max.
gfs
IC = 24A, VCE = 10V, Note 1
10
17
S
Cies
Coes
Cres
860
70
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
29
Qg
Qge
Qgc
77
9
nC
nC
nC
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
33
td(on)
tri
Eon
td(off)
tfi
21
34
ns
ns
mJ
ns
ns
Inductive Load, TJ = 25°C
IC = 24A, VGE = 15V
0.44
200
88
Pins: 1 - Gate
3 - Emitter
2 - Collector
VCE = 400V, RG = 10
Note 2
Eoff
0.70
1.30 mJ
td(on)
tri
Eon
td(off)
tfi
20
33
ns
ns
Inductive Load, TJ = 125°C
IC = 24A, VGE = 15V
0.75
288
223
1.50
mJ
ns
VCE = 400V, RG = 10
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.66 °C/W
°C/W
0.50
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 10A, VGE = 0V, Note 1
2.66
1.66
V
V
TJ = 150°C
IRM
2.5
A
IF = 12A, VGE = 0V,
-diF/dt = 100A/μs, VR = 100V, TJ = 125°C
trr
trr
110
30
ns
ns
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
RthJC
2.5 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
