Advanced Technical Information
IXGA9289
VCES
IC25
= 300 V
= 120 A
Trench IGBT
VCE(sat)(typ) = 1.4 V
For Plasma Display Applications
(Development type IXGA_120N30TC)
TO-263(IXGA)
Symbol
VCES
Test Conditions
Maximum Ratings
G
TJ = 25°C to 150°C
300
V
V
S
(TAB)
VGEM
±30
G = Gate
S = Source
D = Drain
TAB = Drain
IC25
TC = 25°C, IGBT chip capability
TC = 90°C
120
75
A
A
A
A
IC90
ICM
TJ ≤ 150°C, tp < 300 µs
Lead current limit
200
75
IC(RMS)
Features
SSOA
VGE = 15 V, TVJ = 150°C, RG = 20 Ω
ICM = 100
A
•International standard packages
•Trench gate construction for low VCE(sat)
- for minimum on-state conduction
losses
(RBSOA)
Clamped inductive load, VCE < 300 V
PC
TC = 25°C
250
W
TJ
-55 ... +150
150
°C
°C
°C
•MOS Gate turn-on
TJM
Tstg
- drive simplicity
-55 ... +150
Applications
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
260
°C
°C
• PDP Screen Drivers
• AC motor speed control
• DC servo and robot drives
• DC choppers
Plastic body for 10s
Md
Mounting torque (TO-3P)
TO-263
1.3/10 Nm/lb.in.
Weight
3
g
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
• Capacitor discharge
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VGE(th)
ICES
IC = 250 µA, VCE = VGE
3.0
5.0
V
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
1
µA
µA
200
IGES
VCE = 0 V, VGE = ±20 V
±200
nA
VCE(sat)
VGE = 15V, IC = 60 A
IC = 120 A
1.4
1.7
1.8
V
V
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DS99361(03/05)
