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2SK2140-Z

型号：

2SK2140-Z

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

10 页

PDF大小：

246 K

下载PDF手册
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas  
Electronics products or the technology described in this document for any purpose relating to military applications or use by  
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and  
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited  
under any applicable domestic or foreign laws or regulations.  
6.  
7.  
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages  
incurred by you resulting from errors in or omissions from the information included herein.  
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as  
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular  
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior  
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for  
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way  
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an  
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written  
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise  
expressly specified in a Renesas Electronics data sheets or data books, etc.  
“Standard”:  
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual  
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; safety equipment; and medical equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or  
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare  
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,  
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation  
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out of the use of Renesas Electronics products beyond such specified ranges.  
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a  
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire  
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because  
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system  
manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental  
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable  
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS  
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with  
applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas  
Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this  
document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK2140, 2SK2140-Z  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect  
Transistor designed for high voltage switching applications.  
(in millimeters)  
10.6 MAX.  
4.8 MAX.  
3.6 0.ꢀ  
FEATURES  
1.3 0.ꢀ  
10.0  
• Low On-state Resistance  
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A)  
4
• Low Ciss  
Ciss = 930 pF TYP.  
1 ꢀ 3  
• High Avalanche Capability Ratings  
0.5 0.ꢀ  
1.3 0.ꢀ  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
0.75 0.1  
ꢀ.54  
ꢀ.8 0.ꢀ  
Drain to Source Voltage  
Gate to Source Voltage  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
600  
±30  
±7.0  
±28  
75  
V
V
ꢀ.54  
1. Gate  
ꢀ. Drain  
3. Source  
4. Fin (Drain)  
Drain Current (DC)  
A
Drain Current (pulse)*  
A
JEDEC: TO-ꢀꢀ0AB  
Total Power Dissipation (Tc = 25 ˚C)  
Total Power Dissipation (TA = 25 ˚C)  
Storage Temperature  
W
W
MP-25 (TO-220)  
PT2  
1.5  
4.8 MAX.  
(10.0)  
1.3 0.ꢀ  
Tstg –55 to +150 ˚C  
4
Channel Temperature  
Tch  
IAS  
150  
7.0  
˚C  
A
Single Avalanche Current**  
Single Avalanche Energy**  
EAS  
16.3  
mJ  
1.4 0.ꢀ  
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %  
1.0 0.3  
0.5 0.ꢀ  
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0  
(ꢀ.54) (ꢀ.54)  
1
ꢀ 3  
1. Gate  
ꢀ. Drain  
3. Source  
4. Fin (Drain)  
MP-25Z (SURFACE MOUNT TYPE)  
Drain  
Body  
Diode  
Gate  
Source  
Document No. TC-2513  
(O. D. No. TC-8072)  
Date Published February 1995 P  
Printed in Japan  
1995  
©
2SK2140, 2SK2140-Z  
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)  
UNIT  
CHARACTERISTIC  
Drain to Source On-state Resistance  
Gate to Source Cutoff Voltage  
Forward Transfer Admittance  
Drain Leakage Current  
SYMBOL  
RDS(on)  
VGS(off)  
| yfs |  
IDSS  
MIN.  
TYP.  
1.1  
MAX.  
1.5  
TEST CONDITIONS  
VGS = 10 V, ID = 3.5 A  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 3.5 A  
VDS = 600 V, VGS = 0  
VGS = ±30 V, VDS = 0  
VDS = 10 V  
Ω
V
2.5  
1.5  
3.5  
S
µA  
nA  
100  
Gate to Source Leakage Current  
Input Capacitance  
IGSS  
±100  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Ciss  
930  
200  
40  
Output Capacitance  
Coss  
VGS = 0  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Crss  
f = 1 MHz  
td(on)  
tr  
20  
VGS = 10 V  
Rise Time  
12  
VDD = 150 V  
ID = 3.5 A, RG = 10 Ω  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
60  
12  
RL = 42.9 Ω  
Total Gate Charge  
QG  
30  
6.0  
15  
VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
QGS  
QGD  
VF(S-D)  
trr  
ID = 7.0 V  
VDD = 450 V  
IF = 7.0 A, VGS = 0  
IF = 7.0 A  
1.0  
400  
2.0  
ns  
Qrr  
di/dt = 50 A/µs  
µC  
Test Circuit 1 Avalanche Capability  
Test Circuit 2 Switching Time  
D.U.T.  
D.U.T.  
V
GS  
L
RL  
RG = 25 Ω  
90 %  
V
GS  
Wave Form  
VGS (on)  
10 %  
10 %  
RG  
0
PG.  
PG.  
50 Ω  
RG = 10 Ω  
VDD  
VDD  
VGS = 20 → 0 V  
I
D
90 %  
90 %  
10 %  
I
D
VGS  
0
BVDSS  
I
D
0
Wave Form  
IAS  
VDS  
t
d (on)  
t
r
t
d (off)  
t
f
ID  
t
VDD  
t
on  
t
off  
t = 1 us  
Duty Cycle ≤ 1 %  
Starting Tch  
Test Circuit 3 Gate Charge  
D.U.T.  
IG = 2 mA  
RL  
PG.  
50 Ω  
VDD  
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.  
2
2SK2140, 2SK2140-Z  
TYPICAL CHARACTERISTICS (TA = 25 ˚C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
100  
80  
60  
40  
20  
80  
60  
40  
20  
0
0
20  
40  
60  
80 100 120 140 160  
20  
40  
60  
80 100 120 140 160  
TC - Case Temperature - ˚C  
TC - Case Temperature - ˚C  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
FORWARD BIAS SAFE OPERATING AREA  
100  
10  
Pulsed  
ID (pulse)  
10  
5
10 V  
8 V  
VGS = 20 V  
µ
6 V  
ID (DC)  
µ
1.0  
0.1  
TC = 25 ˚C  
Single Pulse  
1
10  
100  
1 000  
0
5
10  
VDS - Drain to Source Voltage - V  
VDS - Drain to Source Voltage - V  
DRAIN CURRENT vs.  
GATE TO SOURCE VOLTAGE  
100  
10  
1
VDS = 10 V  
Pulsed  
TC = –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
0.1  
0
5
10  
15  
VGS - Gate to Source Voltage - V  
3
2SK2140, 2SK2140-Z  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1 000  
100  
10  
Rth (ch-a) = 83.3 ˚C/W  
Rth (ch-c) = 1.67 ˚C/W  
1
0.1  
0.01  
0.001  
TC = 25 ˚C  
Single Pulse  
10 µ  
100µ  
1 m  
10 m 100 m  
1
10  
100  
1 000  
PW - Pulse Width - s  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
10  
Pulsed  
2.0  
Tch = –25 ˚C  
25 ˚C  
75 ˚C  
125 ˚C  
ID = 7 A  
3.5 A  
1.0  
0.7 A  
1.0  
VDS = 10 V  
Pulsed  
0.1  
1.0  
10  
0
4
8
12  
16  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - (V)  
DRAIN TO SOURCE ON-STATE  
RESISTANCE vs. DRAIN CURRENT  
GATE TO SOURCE CUTOFF VOLTAGE  
vs. CHANNEL TEMPERATURE  
4.0  
3.0  
2.0  
1.0  
0
Pulsed  
4.0  
2.0  
VGS = 10 V  
20 V  
VDS = 10 V  
ID = 1 mA  
–50  
1.0  
10  
100  
0
50  
100  
150  
ID - Drain Current - A  
Tch - Channel Temperature - ˚C  
4
2SK2140, 2SK2140-Z  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
100  
10  
Pulsed  
VGS = 10 V  
Pulsed  
2.0  
ID = 3.5 A  
1.0  
10 V  
VGS = 0 V  
1.0  
0.1  
0
–50  
0
50  
100  
150  
0
0.5  
1.0  
1.5  
2.0  
Tch - Channel Temperature - ˚C  
VSD - Source to Drain Voltage - V  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
SWITCHING CHARACTERISTICS  
10 000  
1 000  
100  
10  
1 000  
100  
10  
VGS = 0 V  
f = 1 MHz  
tr  
tf  
Ciss  
Coss  
td (on)  
td(off)  
Crss  
VDD = 150 V  
VGS = 10 V  
RG = 10 Ω  
1
0.1  
1.0  
10  
100  
1 000  
1.0  
10  
100  
VDS - Drain to Source Voltage - V  
ID - Drain Current - A  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
DYNAMIC INPUT CHARACTERISTICS  
800  
600  
400  
200  
16  
800  
600  
400  
200  
0
di/dt = 50 A/µs  
VGS = 10 V  
ID = ID (DC)  
14  
12  
10  
8
VGS  
VDD = 450 V  
300 V  
150 V  
6
4
VDS  
2
0
0
4
8
12  
16  
20  
24  
28  
32  
0.1  
1.0  
10  
100  
Qg - Gate Charge - nC  
ID - Drain Current - A  
5
2SK2140, 2SK2140-Z  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY vs.  
STARTING CHANNEL TEMPERATURE  
50  
10  
20  
15  
10  
5
ID (peak) = ID (DC)  
VDD = 150 V  
16.3 mJ  
IAS = 7 A  
1.0  
0.1  
RG = 25 Ω  
VDD = 150 V  
VGS = 20 V → 0  
Starting Tch = 25 ˚C  
0
100 µ  
1 m  
10 m  
100 m  
25  
50  
75  
100  
125  
150  
L - Inductance - H  
Starting Tch-Starting Channel Temperature - ˚C  
6
2SK2140, 2SK2140-Z  
REFERENCE  
Document Name  
Document No.  
TEI-1202  
IEI-1209  
NEC semiconductor device reliability/quality control system.  
Quality grade on NEC semiconductor devices.  
Semiconductor device mounting technology manual.  
Semiconductor device package manual.  
IEI-1207  
IEI-1213  
Guide to quality assurance for semiconductor devices.  
Semiconductor selection guide.  
MEI-1202  
MF-1134  
TEA-1034  
TEA-1035  
TEA-1037  
Power MOS FET features and application switching power supply.  
Application circuits using Power MOS FET.  
Safe operating area of Power MOS FET.  
The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the  
rated voltage may be applied to this device.  
7
2SK2140, 2SK2140-Z  
[MEMO]  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  
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