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IXGL50N60BD1

型号：

IXGL50N60BD1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

593 K

下载PDF手册
HiPerFASTTM IGBT  
ISOPLUS264TM  
VCES = 600 V  
IXGL 50N60BD1  
IC25  
VCE(sat) = 2.3 V  
tfi(typ) = 85 ns  
= 75 A  
(Electrically Isolated Back Surface)  
Preliminary data sheet  
(D1)  
ISOPLUS-264TM  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
C
E
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
(Backside)  
G = Gate  
C = Collector  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
75  
45  
200  
A
A
A
E = Emitter  
Features  
SSOA  
V
= 15 V, T = 125°C, RG = 10 Ω  
I
= 100  
A
CGlaE mped indVuJctive load, L = 100 µH  
TC = 25°C  
@C0M.8 VCES  
250  
z
(RBSOA)  
DCB Isolated mounting tab  
Meets TO-264 package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
z
z
z
z
PC  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- drive simplicity  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
z
Uninterruptible power supplies (UPS)  
VISOL  
50/60 Hz, RMS, t = 1minute leads-to-tab  
2500  
8
V
g
z
Switched-mode and resonant-mode  
power supplies  
Weight  
z
AC motor speed control  
z
DC servo and robot drives  
Symbol  
BVCES  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
z
DC choppers  
Advantages  
I
= 250 µA, VGE = 0 V  
50N60B  
600  
V
V
ICC = 1 mA  
50N60BD1 600  
z
Easy assembly  
High power density  
Very fast switching speeds for high  
frequency applications  
z
VGE(th)  
ICES  
I
= 250 µA, VCE = VGE  
50N60B  
2.5  
5.0  
5.0  
V
V
ICC = 500 µA  
50N60BD1 2.5  
z
VCE = V  
50N60B  
200 µA  
650 µA  
VGE = 0CVES  
50N60BD1  
50N60B  
TJ = 125°C  
1
5
mA  
mA  
50N60BD1  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
2.3  
=
VCE(sat)  
IC = IT, VGE = 15 V  
V
© 2003 IXYS All rights reserved  
DS99095(10/03)  
IXGL50N60BD1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS264OUTLINE  
gfs  
IC = IT; VCE = 10 V,  
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
25  
35  
S
Cies  
4000  
280  
pF  
pF  
pF  
50N60B  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz 50N60BD1  
340  
100  
pF  
Qg  
110  
30  
nC  
nC  
nC  
Qge  
Qgc  
IC = IT, VGE = 15 V, VCE = 0.5 VCES  
35  
td(on)  
tri  
td(off)  
tfi  
50  
50  
ns  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
IC = I , VGE = 15 V  
VCE =T0.8 • VCES, RG = Roff = 2.7 Ω  
200  
Remarks: Switching times may increase  
for V (Clamp) > 0.8 • VCES, higher TJ or  
increCaEsed RG  
85 150  
Eoff  
2.5  
mJ  
Inductive load, TJ = 125°C  
IC = IT, VGE = 15 V  
td(on)  
tri  
50  
60  
ns  
ns  
mJ  
ns  
ns  
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω  
Eon  
td(off)  
tfi  
3
Remarks: Switching times may increase  
for V (Clamp) > 0.8 • VCES, higher TJ or  
increCaEsed RG  
200  
175  
Eoff  
2.5  
mJ  
RthJC  
RthCK  
0.5 K/W  
K/W  
0.15  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IT, VGE = 0 V,  
T = 150°C  
1.6  
2.5  
V
V
Pulse test, t ≤ 300 ms, duty cycJle ≤ 2 %  
IRM  
IF = I , V = 0 V, -diF/dt = 100 A/ms  
TJ = 1C0900 °CG,EVR = 100 V  
3.2  
35  
A
trr  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V  
ns  
RthJC  
0.85 K/W  
Note: Test current IT = 50A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGL50N60BD1  
100  
80  
60  
40  
20  
0
200  
160  
120  
80  
V
GE = 15V  
TJ = 25°C  
TJ = 25°C  
11V  
9V  
VGE = 15V  
13V  
11V  
9V  
13V  
7V  
5V  
7V  
5V  
40  
0
0
1
2
3
4
5
0
2
4
6
8
10  
VCE - Volts  
Fig. 1. Saturation Voltage Characteristics  
VCE - Volts  
Fig. 2. Extended Output Characteristics  
100  
80  
60  
40  
20  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
TJ = 125°C  
VGE = 15V  
VGE = 15V  
9V  
I
C = 100A  
13V  
11V  
7V  
5V  
IC = 50A  
IC = 25A  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Fig. 3. Saturation Voltage Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
10000  
1000  
100  
100  
80  
60  
40  
20  
0
f = 1Mhz  
V
CE = 10V  
C
iss  
C
C
oss  
rss  
TJ = 25°C  
TJ = 125°C  
10  
0
5
10 15 20 25 30 35 40  
0
2
4
6
8
10  
VGE - Volts  
VCE-Volts  
Fig. 6. JunctionCapacitanceCurves  
Fig. 5. Saturation Voltage Characteristics  
© 2003 IXYS All rights reserved  
IXGL50N60BD1  
12  
10  
8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
10  
TJ = 125°C  
TJ = 125°C  
E(ON)  
RG = 4.7Ω  
E(ON)  
IC = 100A  
E(OFF)  
8
6
4
2
0
E(OFF)  
6
IC = 50A  
IC =25A  
E(ON)  
4
E(OFF)  
E(OFF)  
E(ON)  
2
0
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
100  
RG - Ohms  
IC - Amperes  
Fig. 7. Dependence of EON and EOFF on IC.  
Fig. 8. Dependence of tfi and EOFF on RG.  
600  
20  
15  
10  
5
IC =50A  
CE = 250V  
V
100  
10  
1
TJ = 125°C  
RG = 5.2 Ω  
dV/dt < 5V/ns  
0.1  
0
0
100  
200  
300  
400  
500  
0
50  
100  
150  
200  
250  
300  
VCE - Volts  
Qg - nanocoulombs  
Fig.10.Turn-offSafeOperatingArea  
Fig. 9. Gate Charge  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Figure11. IGBTTransientThermalResistance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGL50N60BD1  
160  
A
140  
4000  
nC  
80  
T =100°C  
VVRJ= 300V  
T =100°C  
VVRJ= 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ=25°C  
TVJ=100°C  
I =120A  
IF= 60A  
IFF= 30A  
IRM  
Qr  
I =120A  
IFF= 30A  
IF= 60A  
40  
20  
0
TVJ=150°C  
A/µs  
0
1
2
V
100  
1000  
0
200 400 600 800 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 12 Forward current IF versus VF  
2.0  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
140  
20  
V
1.6  
µs  
T =100°C  
VVRJ = 300V  
ns  
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
VFR  
tfr  
120  
110  
100  
90  
I =120A  
IF= 60A  
IFF= 30A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
Qr  
T =100°C  
IFVJ = 60A  
0.0  
80  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 800 1000  
0
200 400 600 800 1000  
diF/dt  
°C  
A/µs  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and  
tfr versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
4
0.3073  
0.3533  
0.0887  
0.1008  
0.0055  
0.0092  
0.0007  
0.0399  
0.01  
0.001  
DSEP 2x61-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2003 IXYS All rights reserved  
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