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IXCY01N90E

型号：

IXCY01N90E

品牌：

IXYS[ IXYS CORPORATION ]

页数：

3 页

PDF大小：

112 K

下载PDF手册
VDSS = 900 V  
ID(limit) = 250mA  
IXCP 01N90E  
IXCY 01N90E  
Gate Controlled  
Current Limiter  
R
DS(on) = 80 Ω  
N-Channel,EnhancementMode  
D
G
S
Symbol  
TestConditions  
Maximum Ratings  
TO-252 (IXCY)  
TO-220 (IXCP)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
900  
900  
V
V
TAB  
TAB  
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
PD  
TC = 25°C  
40  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
G
D
S
Md  
Mounting torque with 3.5mm screw (TO-220)  
0.55/5 Nm/lb.in.  
Weight  
TO-251/252 = 1 g, TO-220 = 4 g  
G = Gate,  
D = Drain,  
S = Source,  
TAB = Drain  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Features  
•High output resistance in the saturated  
VDSS  
VGS(th)  
VGS = 0 V, ID = 25 µA  
VDS = VGS, ID = 25 µA  
900  
2.5  
V
V
•mRuogdgeeodf HoDpeMraOtiSoTnM process  
•Stable peak drain current limit  
•High voltage current regulator  
•International standard packages  
5
IGSS  
VGS = ±20 V, VDS = 0  
±50 nA  
10 µA  
IDSS  
VDS = VDSS; VGS = 0 V  
Applications  
RDS(on)  
V
= 10 V, ID = 50 mA  
80  
Ω
PGuSlse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
• Current regulation  
• Over current and over voltage  
IDP  
Plateau Current; V  
= 10 V, VGS = 10V  
100  
130 mA  
Pulse test, t ≤ 300 DµSs, duty cycle d ≤ 2 %  
• Lpirnoeteacrtiorengufolartsoernsitive loads  
98701-A (8/02)  
© 2002 IXYS All rights reserved  
IXCP 01N90E  
IXCY 01N90E  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-220 AB Dimensions  
VDS = 20 V; ID = 100 mA, pulse test  
40 mS  
Ciss  
Coss  
Crss  
133  
24  
6.6  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
15  
137  
11  
ns  
ns  
ns  
ns  
VDS = 500 V, ID = 50 mA  
VGS = 10 V, RG = 50 Ω (External)  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
131  
4 - Drain  
Bottom Side  
Qg(on)  
Qgs  
Qgd  
7.5  
2.2  
3.0  
nC  
nC  
nC  
VGS = 10 V, VDS = 500 V, ID = 50 mA  
∆IA(P)/∆T Plateau Current Shift VDS= 10 V, VGS= 10 V  
±
50  
ppm/K  
with Temperature  
∆VAK/∆ IA(p) Dynamic Resistance VDS = 20 V, VGS= 10 V 125  
kΩ  
VF  
IF = 50mA  
1.8  
V
RthJC  
RthCA  
3.1 K/W  
TO-220  
80  
100  
K/W  
K/W  
TO-251/252  
TO-252 AA Outline  
Dim. Millimeter  
Inches  
Max.  
Min.  
Max.Min.  
A
2.19 2.38 0.086 0.094  
A1 0.89 1.14 0.035 0.045  
A2  
b
0
0.13  
0
0.005  
0.64 0.89 0.025 0.035  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
D
5.97 6.22 0.235 0.245  
D1 4.32 5.21 0.170 0.205  
E
E1  
6.35 6.73 0.250 0.265  
4.32 5.21 0.170 0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090BSC  
0.180BSC  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
4,850,072  
IXCP 01N90E  
IXCY 01N90E  
250  
200  
150  
100  
50  
VGS = 15V  
14V  
100  
10  
1
13V  
12V  
11V  
10V  
9V  
8V  
7V  
6V  
5V  
0
0
10  
20  
30  
40  
50  
6
8
10  
12  
14  
VDS - Volts  
V
GS -Volts  
Figure 1, Output Characteristics at 25ºC  
Figure 2. Drain Current vs.Gate Voltage  
500K  
400K  
300K  
200K  
100K  
0K  
180  
160  
140  
120  
100  
80  
TJ = 25oC  
VDS = 20V  
VGS = 12V  
VDS = 20V  
11V  
10V  
9V  
0
20 40 60 80 100 120 140 160  
ID - Milliamperes  
-50  
-25  
0
25  
50  
75  
100 125  
oC  
Temperature -  
Figure 3. Dynamic Output Resistance RO vs. Drain  
Current.  
Figure 4. Drain Current vs, Temperature for a  
constant gate-source voltage.  
12  
R(th)JA : 10 K/W  
10  
Figure 5. Allowable Power Dissipation for  
various heat sinking conditions. Note that  
the junction temperature can be derated  
by increasing the ambient temperature a  
like amount.  
8
15  
6
20  
4
30  
40  
50  
2
60  
80  
100  
0
25  
50  
75  
100  
125  
150  
Ambient Temperature - oC  
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