请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGN72N60C3H1

型号：

IXGN72N60C3H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

217 K

下载PDF手册
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
= 600V  
= 52A  
IXGN72N60C3H1  
VCE(sat)  
tfi(typ)  
≤£ 2.50V  
= 55ns  
High-Speed Low-Vsat PT  
IGBTs 40-100 kHz Switching  
SOT-227B, miniBLOC  
E153432  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
E c  
600  
600  
±20  
±30  
V
V
V
V
G
VCGR  
VGES  
VGEM  
Transient  
E c  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
78  
52  
A
A
A
C
G = Gate, C = Collector, E = Emitter  
360  
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
IA  
TC = 25°C  
TC = 25°C  
50  
A
EAS  
500  
ICM = 150  
@ VCE ≤ VCES  
360  
mJ  
SSOA  
(RBSOA)  
PC  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
TC = 25°C  
A
Features  
z Optimized for Low Switching Losses  
z Square RBSOA  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Aluminium Nitride Isolation  
- High Power Dissipation  
z Isolation Voltage 3000V~  
z Avalanche Rated  
TJM  
Tstg  
VISOL  
-55 ... +150  
50/60Hz  
IISOL ≤ 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z Anti-Parallel Ultra Fast Diode  
z International Standard Package  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
z High Power Density  
z Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z Motor Drives  
z SMPS  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
VCE = VCES, VGE = 0V  
250  
3
μA  
mA  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
V
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
2.10  
1.65  
2.50  
TJ = 125°C  
DS100053A(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGN72N60C3H1  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
33  
55  
S
Cies  
Coes  
Cres  
4780  
330  
pF  
pF  
pF  
117  
Qg  
174  
33  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
72  
td(on)  
tri  
27  
37  
ns  
ns  
Inductive load, TJ = 25°C  
M4 screws (4x) supplied  
Eon  
td(off)  
tfi  
1.03  
77  
mJ  
IC = 50A, VGE = 15V  
130 ns  
110 ns  
VCE = 480V, RG = 2Ω, Note 2  
55  
Eoff  
0.48  
0.95 mJ  
td(on)  
tri  
26  
36  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
1.48  
120  
124  
0.93  
mJ  
ns  
VCE = 480V, RG = 2Ω, Note 2  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.35 °C/W  
°C/W  
0.05  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.0  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
trr  
8.3  
A
IF = 60A, VGE = 0V,  
-diF/dt = 200A/μs, VR = 300V  
140  
ns  
0.42 °C/W  
RthJC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGN72N60C3H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
7V  
5V  
5V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
0
2
4
6
8
10  
12  
14  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
JunctionTemperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
13V  
11V  
9V  
I C = 100A  
I C = 50A  
7V  
5V  
I C = 25A  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 100A  
50A  
25A  
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGN72N60C3H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
VCE = 300V  
I C = 50A  
I
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
res  
60  
C
40  
TJ = 125ºC , RG = 2Ω  
dv / dt < 10V / ns  
f
= 1 MHz  
20  
0
10  
100  
200  
300  
400  
VCE - Volts  
500  
600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGN72N60C3H1  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
5.6  
4.8  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
E
E
on - - - -  
off  
E
E
on - - - -  
off  
RG = 2  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
VGE = 15V  
Ω ,  
VCE = 480V  
I C = 100A  
TJ = 125ºC, 25ºC  
I C = 50A  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.6  
4.8  
4.0  
3.2  
2.4  
1.6  
0.8  
0.0  
t f  
td(off) - - - -  
E
E
on - - - -  
off  
TJ = 125ºC, VGE = 15V  
CE = 480V  
RG = 2ꢀ VGE = 15V  
,
V
VCE = 480V  
I C = 100A  
I C = 100A  
I C = 50A  
I C = 50A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
160  
140  
120  
100  
80  
125  
115  
105  
95  
180  
160  
140  
120  
100  
80  
150  
t f  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
140  
130  
120  
110  
100  
90  
RG = 2ꢀ , VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
TJ = 125ºC  
I
= 100A  
C
I
= 50A  
C
85  
60  
TJ = 25ºC  
60  
75  
40  
80  
20  
70  
40  
65  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGN72N60C3H1  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
TJ = 125ºC, VGE = 15V  
CE = 480V  
RG = 2ꢀ , VGE = 15V  
V
VCE = 480V  
I C = 100A  
TJ = 25ºC, 125ºC  
60  
40  
I C = 50A  
20  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
120  
110  
100  
90  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
t r  
t
d(on) - - - -  
RG = 2Ω , VGE = 15V  
VCE = 480V  
80  
I C = 100A  
70  
60  
50  
40  
30  
I C = 50A  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60C3(8D)11-25-09-C  
IXGN72N60C3H1  
Fig. 22  
Fig. 23  
Fig. 21  
Fig. 24  
Fig. 25  
1.00
0.10
0.01
0.001  
0.01  
0.0001  
0.1  
1
10  
Pulse Width Seconds  
Fig. 26. Maximum Transient Thermal Impedance  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_72N60C3(8D)11-25-09-C  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.239480s