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IXGR72N60B3D1

型号：

IXGR72N60B3D1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

213 K

下载PDF手册
Preliminary Technical Information  
GenX3TM B3-Class  
IGBT w/Diode  
VCES  
IC110  
= 600V  
= 40A  
IXGR72N60B3D1  
VCE(sat) ≤£ 1.80V  
(Electrically Isolated Back Surface)  
tfi(typ)  
= 90ns  
Medium Speed Low Vsat PT IGBTs  
for 5-40 kHz Switching  
ISOPLUS 247TM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
TAB  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Limited by Leads)  
TC = 110°C  
TC = 110°C  
75  
40  
A
A
A
A
G = Gate  
E = Emitter  
C = Collector  
36  
TC = 25°C, 1ms  
360  
IA  
TC = 25°C  
TC = 25°C  
20  
A
Features  
EAS  
220  
mJ  
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
ICM = 240  
A
V
(RBSOA)  
VCE ≤ 600  
z Isolated Mounting Surface  
z Avalanche Rated  
PC  
TC = 25°C  
200  
W
z Anti-Parallel Ultra Fast Diode  
z 2500V Electrical Isolation  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Advantages  
VISOL  
50/60 Hz, RMS, t = 1Minute  
2500  
3000  
V~  
V~  
z High Power Density  
z Low Gate Drive Requirement  
IISOL < 1mA  
t = 20 Seconds  
FC  
Mounting Force  
20..120/4.5..27  
N/lb  
Applications  
TL  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
TSOLD  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
Weight  
5
g
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES, VGE = 0V  
300 μA  
mA  
TJ = 125°C  
TJ = 125°C  
5
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.50  
1.75  
1.80  
V
V
DS99874A(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGR72N60B3D1  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXGR) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
50  
83  
S
Cies  
Coes  
Cres  
6800  
575  
80  
pF  
pF  
pF  
Qg  
225  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = 60A, VGE = 15V, VCE = 0.5 • VCES  
82  
td(on)  
tri  
31  
33  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
1.38  
150  
90  
mJ  
ns  
330  
160  
VCE = 480V, RG = 3Ω  
ns  
Eoff  
1.05  
2.20 mJ  
td(on)  
tri  
29  
34  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
2.70  
228  
142  
2.20  
mJ  
ns  
VCE = 480V, RG = 3Ω  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.62 °C/W  
°C/W  
0.15  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Symbol  
VF  
Test Conditions  
Min.  
Typ.  
Max.  
IF = 60A, VGE = 0V, Note 1  
2.1  
V
TJ = 150°C  
TJ = 100°C  
1.4  
V
IF = 60A, VGE = 0V,  
IRM  
8.3  
A
-diF/dt = 100A/μs, VR = 100V  
trr  
35  
ns  
IF = 1A, -di/dt = 200A/μs, VR = 30V  
RthJC  
0.85 °C/W  
Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGR72N60B3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
120  
100  
80  
60  
40  
20  
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
30  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
0
1
2
3
4
5
6
7
8
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
120  
100  
80  
60  
40  
20  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 120A  
I C = 60A  
9V  
7V  
I C = 30A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 120A  
60A  
30A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGR72N60B3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
130  
120  
110  
100  
90  
16  
14  
12  
10  
8
VCE = 300V  
C = 60A  
I G = 10mA  
I
TJ = - 40ºC  
25ºC  
125ºC  
80  
70  
60  
50  
6
40  
4
30  
20  
2
10  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
280  
240  
200  
160  
120  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
TJ = 125ºC  
C
res  
RG = 3Ω  
dV / dt < 10V / ns  
40  
= 1 MHz  
5
f
0
10  
100  
200  
300  
400  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60B3(76)02-10-09-D  
IXGR72N60B3D1  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
E
E
on - - - -  
RG = 3ꢀ VGE = 15V  
off  
,
CE = 480V  
I C =100A  
V
TJ = 125ºC  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
I C = 50A  
I C = 25A  
TJ = 25ºC  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
7
6
5
4
3
2
1
0
7
240  
220  
200  
180  
160  
140  
120  
100  
80  
1300  
1150  
1000  
850  
I C = 25A, 50A, 100A  
6
5
4
3
2
1
0
I C = 100A  
I C = 100A  
700  
E
E
on - - - -  
I C = 50A  
off  
RG = 3ꢀ VGE = 15V  
,
VCE = 480V  
I C = 50A  
550  
400  
tf  
td(off) - - - -  
I C = 25A  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
250  
I C = 25A  
105 115 125  
100  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
25  
35  
45  
55  
65  
75  
85  
95  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
220  
200  
180  
160  
140  
120  
100  
80  
260  
245  
230  
215  
200  
185  
170  
155  
140  
230  
210  
190  
170  
150  
130  
110  
90  
250  
235  
220  
205  
190  
175  
160  
145  
130  
TJ = 125ºC  
tf  
td(off) - - - -  
RG = 3ꢀ , VGE = 15V  
I C = 25A, 50A, 100A  
VCE = 480V  
tr  
td(off) - - - -  
RG = 3 , VGE = 15V  
ꢀ
TJ = 25ºC  
70  
VCE = 480V  
60  
70  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGR72N60B3D1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
170  
150  
130  
110  
90  
140  
125  
110  
95  
90  
80  
70  
60  
50  
40  
30  
20  
10  
34  
33  
32  
31  
30  
29  
28  
27  
26  
tr  
td(on)  
- - - -  
tr  
td(on)  
- - - -  
TJ = 125ºC, VGE = 15V  
RG = 3Ω , VGE = 15V  
CE = 480V  
VCE = 480V  
V
I C = 100A  
TJ = 25ºC, 125ºC  
80  
25ºC < TJ < 125ºC  
70  
65  
I C = 50A  
50  
50  
30  
35  
I C = 25A  
10  
20  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
I C = 100A  
tr  
td(on  
) - - - -  
RG = 3 , VGE = 15V  
ꢀ
VCE = 480V  
I C = 50A  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_72N60B3(76)02-10-09-D  
IXGR72N60B3D1  
160  
A
140  
4000  
nC  
80  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF= 120A, 60A, 30A  
IF  
IRM  
Qr  
TVJ= 150°C  
100°C  
IF= 120A, 60A, 30A  
40  
20  
0
25°C  
A/μs  
1000  
0
1
2
V
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 21. Forward Current IF Versus VF  
2.0  
Fig. 22. Reverse Recorvery Charge Qr  
Versus -diF/dt  
Fig. 23. Peak ReverseCurrent IRM  
Versus -diF/dt  
140  
20  
1.6  
μs  
TVJ= 100°C  
IF = 60A  
ns  
TVJ= 100°C  
VR = 300V  
V
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
10  
5
1.2  
trr  
120  
110  
100  
90  
VFR  
IF= 30A, 60A, 120A  
1.0  
0.8  
0.4  
0.
IRM  
0.5  
QRM  
0.0  
80  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic Paraments Qr, IRM  
Versus TvJ  
Fig. 25. Recorvery Time trr Versus  
-diF/dt  
Fig. 26. Peak Forward Voltage VRM  
and trr Versus -diF/dt  
1.000  
0.100  
0.010  
0.001  
0.1  
0.001  
Pulse Width [ s ]  
0.0001  
0.01  
1
10  
Fig. 27. Maximum transient thermal impedance (for diode)  
Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_72N60B3(76)02-10-09-D  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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