JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK3018 N-channel MOSFET
SOT-323
FEATURES
3
z
z
z
z
z
Low on-resistance
1
Fast switching speed
2
1. GATE
Low voltage drive makes this device ideal for portable equipment
Easily designed drive circuits
2. SOURCE
3. DRAIN
Easy to parallel
Marking: KN
Equivalent circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Units
Symbol Parameter
Value
30
VDS
VGSS
ID
V
Drain-Source voltage
Gate-Source Voltage
±20
V
Continuous Drain Current
Power Dissipation
0.1
A
PD
0.2
W
TJ
Junction Temperature
150
℃
Tstg
RθJA
Storage Temperature
-55-150
625
℃
Thermal Resistance from Junction to Ambient
℃ /W
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS VGS = 0V, ID = 10µA
30
V
µA
nA
V
Zero Gate Voltage Drain Current
Gate –Source leakage current
Gate Threshold Voltage
IDSS
IGSS
VDS =30V,VGS = 0V
VGS =±±2V, VDS = 0V
VDS = 3V, ID =100µA
VGS = 4V, ID =10mA
VGS =2.5V,ID =1mA
VDS =3V, ID = 10mA
0.2
±500
1.5
8
VGS(th)
0.8
20
Ω
Drain-Source On-Resistance
RDS(on)
gFS
13
Ω
Forward Transconductance
Dynamic Characteristics*
Input Capacitance
mS
Ciss
Coss
Crss
13
9
pF
pF
pF
VDS =5V,VGS =0V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
4
td(on)
tr
15
35
80
80
ns
ns
ns
ns
VGS =5V, VDD =5V,
ID =10mA, Rg=10Ω, RL=500Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
*These parameters have no way to verify.
A,Dec,2010
