IXGR 12N60C
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
IC = IT; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
7
11
S
Cies
Coes
Cres
860
64
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
15
Qg
32
10
10
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
20
20
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IC = IT, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
60
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
55
Dim.
Millimeter
Inches
Min. Max. Min. Max.
Eoff
0.09
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
td(on)
tri
20
20
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
IC = IT, VGE = 15 V, L = 300 µH
Eon
td(off)
tfi
0.15
V
CE = 0.8 VCES, RG = Roff = 18 Ω
C
D
E
0.61
0.80
20.80 21.34
15.75 16.13
.024 .031
.819 .840
.620 .635
85 180
85 180
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Eoff
0.27 0.60 mJ
2.27 K/W
3.81
4.32
RthJC
RthCK
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
0.15
K/W
Note: IT = 12A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
